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    Method and apparatus for ion sequestration and a nanostructured metal phosphate
    1.
    发明申请
    Method and apparatus for ion sequestration and a nanostructured metal phosphate 失效
    用于离子螯合的方法和装置以及纳米结构的金属磷酸盐

    公开(公告)号：US20070026531A1

    公开(公告)日：2007-02-01

    申请号：US11195394

    申请日：2005-08-01

    申请人： Shas Mattigod ,  Glen Fryxell ,  Xiaohong Li ,  Kent Parker ,  Dawn Wellman

    发明人： Shas Mattigod ,  Glen Fryxell ,  Xiaohong Li ,  Kent Parker ,  Dawn Wellman

    IPC分类号： G01N21/75

    CPC分类号： C01B25/37 ,  B01D15/00 ,  B01J20/0207 ,  B01J20/0214 ,  B01J20/0248 ,  B01J20/0251 ,  B01J20/0292 ,  B01J20/28007 ,  B01J27/1813 ,  B01J29/84 ,  B01J35/1061 ,  B82Y30/00 ,  C02F1/288 ,  C02F2305/08 ,  Y10S977/902

    摘要： A nanostructured substance, a process for sequestration of ionic waste, and an ion-sequestration apparatus are disclosed in the specification. The nanostructured substance can comprise a Lewis acid transition metal bound to a phosphate, wherein the phosphate comprises a primary structural component of the substance and the Lewis acid transition metal is a reducing agent. The nanostructured substance has a Brunner-Emmet-Teller (BET) surface area greater than or equal to approximately 100 m2/g, and a distribution coefficient for an analyte, Kd, greater than or equal to approximately 5000 ml/g. The process can comprise contacting a fluid and a nanostructured metal phosphate. The apparatus can comprise a vessel and a nanostructured metal phosphate. The vessel defines a volume wherein a fluid contacts the nanostructured metal phosphate.

    摘要翻译： 在说明书中公开了纳米结构物质，离子废物的螯合方法和离子螯合装置。 纳米结构物质可以包含与磷酸盐结合的路易斯酸过渡金属，其中磷酸盐包括物质的主要结构成分，路易斯酸过渡金属是还原剂。 纳米结构物质具有大于或等于约100m 2 / g的Brunner-Emmet-Teller（BET）表面积，并且分析物的分布系数K ，大于或等于约5000ml / g。 该方法可以包括使流体和纳米结构的金属磷酸盐接触。 该装置可以包括容器和纳米结构的金属磷酸盐。 容器限定了其中流体接触纳米结构的金属磷酸盐的体积。

    Method for producing high purity low dielectric constant ceramic and hybrid ceramic films field of the invention
    4.
    发明申请
    Method for producing high purity low dielectric constant ceramic and hybrid ceramic films field of the invention 失效
    本发明制备高纯度低介电常数陶瓷和复合陶瓷薄膜领域的方法

    公开(公告)号：US20050258578A1

    公开(公告)日：2005-11-24

    申请号：US10489924

    申请日：2001-09-14

    申请人： Jerome Birnbaum ,  Glen Fryxell ,  Shari Xiaohong ,  Christopher Coyle ,  Glen Dunham ,  Suresh Baskaran ,  Ralph Williford

    发明人： Jerome Birnbaum ,  Glen Fryxell ,  Shari Xiaohong ,  Christopher Coyle ,  Glen Dunham ,  Suresh Baskaran ,  Ralph Williford

    IPC分类号： C04B38/06 ,  B28B1/30 ,  B28B11/00 ,  C01B33/12 ,  C04B20/00 ,  C04B33/32 ,  C04B35/14 ,  C04B35/16 ,  C04B35/624 ,  C04B38/00 ,  C04B38/10 ,  C04B41/80 ,  H01L21/316

    CPC分类号： C04B35/62655 ,  B01D67/0048 ,  B01D67/0058 ,  B01D67/0088 ,  B01D67/0093 ,  B01D71/024 ,  B01D2323/18 ,  B01D2323/30 ,  C04B20/0056 ,  C04B35/14 ,  C04B35/16 ,  C04B35/624 ,  C04B38/0022 ,  C04B2111/00482 ,  C04B2111/1025 ,  C04B2235/72 ,  H01L21/31695 ,  C04B38/0051 ,  C04B38/009 ,  C04B38/02 ,  C04B38/10 ,  C04B14/4631

    摘要： Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity. The efficacy of such additives is illustrated using surfactant-templated mesoporous silicate films as a model example. The invention should be broadly applicable to any cross-linked ceramic or hybrid ceramic films (including silicate and organosilicate films, and especially highly porous forms of the films for low-dielectric constant applications). The invention has been found to be particularly effective with surfactant-templated silicate films with nanometer-scale porosity. The invention in either embodiment should also be applicable to evaporation-induced formation of other cross-linked shapes such as fibers and powders.

    摘要翻译： 多孔陶瓷和混合陶瓷膜可用作半导体互连中的低介电常数中间层。 （混合陶瓷膜被定义为在结构中含有有机和陶瓷分子组分的膜，例如有机硅酸盐）。 本发明描述了在增加多孔电介质膜的机械完整性的情况下，湿度处理（使用特定温度/湿度处理作为说明性实例）的有用性，对膜孔隙率或介电常数具有最小的有害影响，并且对膜质量没有不利影响。 以表面活性剂模板的介孔硅酸盐膜为例说明了这种处理的效果。 本发明还描述了与用于这种介电膜的高纯度无碱金属的陶瓷和混合前体一起使用的特定的添加剂族，其将能够以所需的机械完整性更好地控制膜孔隙率和质量以及更低的介电常数。 作为示例，使用表面活性剂模板的中孔硅酸盐膜来说明这些添加剂的功效。 本发明应广泛适用于任何交联的陶瓷或混合陶瓷膜（包括硅酸盐和有机硅酸盐膜，特别是用于低介电常数应用的膜的高度多孔形式）。 已经发现本发明对于具有纳米级孔隙率的表面活性剂模板化硅酸盐膜是特别有效的。 在任一实施方案中的本发明也应适用于其它交联形状如纤维和粉末的蒸发诱导形成。

    Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica
    5.
    发明授权
    Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica 失效
    真空/气相反应器用于多羟基硅烷的脱羟基和烷基化

    公开(公告)号：US06548113B1

    公开(公告)日：2003-04-15

    申请号：US09711666

    申请日：2000-11-09

    申请人： Jerome Birnbaum ,  Gary Maupin ,  Glen Dunham ,  Glen Fryxell ,  Suresh Baskaran

    发明人： Jerome Birnbaum ,  Gary Maupin ,  Glen Dunham ,  Glen Fryxell ,  Suresh Baskaran

    IPC分类号： C23C1644

    CPC分类号： C01B37/02 ,  H01L21/31695 ,  Y10T428/249969 ,  Y10T428/249972

    摘要： Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber. Finally, a flange reactor is described that includes a flange base and lid forming a tiny chamber therein for a wafer, the reactor being heated by conduction from a hot sand bath. The dehydroxylation and alkylation treatment of mesoporous silica films produces treated films exhibiting low dielectric constant and high elastic modulus.

    摘要翻译： 描述了用于气相脱羟基和烷基化反应的真空/气相反应器实施例，其中基底可经受高真空，加热至目标温度，并尽可能快速且有效地用硅烷处理。 为了更好地促进甲硅烷基化和提高该方法的效率，反应器被设计成包含准催化剂表面，它们既可以作为“活化剂”来将物质置于更高能量状态或高活化状态，也可以作为 “洗涤器”来消除在甲硅烷化反应中产生的可能的毒物或反应性副产物。 一个描述的实施方案是在反应器室内具有热的，优选金属的固体表面的热丝反应器，其中处理具有介孔硅酸盐膜的晶片。 另一种是IR反应器，其具有密封铝环空的上下周边的上，下石英窗，以形成加热室。 最后，描述了一种法兰反应器，其包括法兰基座和盖子，用于在晶片上形成微小的室，该反应器由热砂浴传导加热。 介孔二氧化硅膜的脱羟基化和烷基化处理产生显示低介电常数和高弹性模量的处理膜。

    Backfilled, self-assembled monolayers and methods of making same
    6.
    发明申请
    Backfilled, self-assembled monolayers and methods of making same 失效
    回填，自组装单层及其制备方法

    公开(公告)号：US20070141364A1

    公开(公告)日：2007-06-21

    申请号：US11315646

    申请日：2005-12-21

    申请人： Glen Fryxell ,  Thomas Zemanian ,  R. Addleman ,  Christopher Aardahl ,  Feng Zheng ,  Brad Busche ,  Oleg Egorov

    发明人： Glen Fryxell ,  Thomas Zemanian ,  R. Addleman ,  Christopher Aardahl ,  Feng Zheng ,  Brad Busche ,  Oleg Egorov

    IPC分类号： B32B9/04

    CPC分类号： B01J20/3257 ,  B01J20/3225 ,  B82Y30/00 ,  Y10T428/31663

    摘要： Backfilled, self-assembled monolayers and methods of making the same are disclosed. The self-assembled monolayer comprises at least one functional organosilane species and a substantially random dispersion of at least one backfilling organosilane species among the functional organosilane species, wherein the functional and backfilling organosilane species have been sequentially deposited on a substrate. The method comprises depositing sequentially a first organosilane species followed by a backfilling organosilane species, and employing a relaxation agent before or during deposition of the backfilling organosilane species, wherein the first and backfilling organosilane species are substantially randomly dispersed on a substrate.

    摘要翻译： 公开了回填的自组装单层及其制备方法。 所述自组装单层在所述功能性有机硅烷物质中包含至少一种功能性有机硅烷物质和至少一种回填有机硅烷物质的基本无规分散体，其中所述功能性和回填有机硅烷物质已经顺序地沉积在基材上。 该方法包括依次沉积第一有机硅烷物质，然后沉积有机硅烷物质，并在回填有机硅烷物质沉积之前或期间使用松弛剂，其中第一和回填的有机硅烷物质基本上随机分散在基材上。

    Hydroetching of high surface area ceramics using moist supercritical fluids
    7.
    发明授权
    Hydroetching of high surface area ceramics using moist supercritical fluids 失效
    使用潮湿超临界流体对高表面积陶瓷进行水蚀

    公开(公告)号：US06812259B2

    公开(公告)日：2004-11-02

    申请号：US10045930

    申请日：2001-10-26

    申请人： Glen Fryxell ,  Thomas S. Zemanian

    发明人： Glen Fryxell ,  Thomas S. Zemanian

    IPC分类号： C01B3314

    CPC分类号： C01B33/1585 ,  B01J13/0091 ,  C01B13/14 ,  C01F7/02 ,  C01P2006/12 ,  C01P2006/16 ,  C01P2006/17 ,  Y02P20/544

    摘要： Aerogels having a high density of hydroxyl groups and a more uniform pore size with fewer bottlenecks are described. The aerogel is exposed to a mixture of a supercritical fluid and water, whereupon the aerogel forms a high density of hydroxyl groups. The process also relaxes the aerogel into a more open uniform internal structure, in a process referred to as hydroetching. The hydroetching process removes bottlenecks from the aerogels, and forms the hydrogels into more standard pore sizes while preserving their high surface area.

    摘要翻译： 描述了具有高密度羟基和更均匀的孔径并具有较少瓶颈的气凝胶。 气凝胶暴露于超临界流体和水的混合物中，于是气凝胶形成高密度的羟基。 该方法还将气凝胶放松成更开放的均匀内部结构，在称为加氢蚀刻的过程中。 水解过程消除了气凝胶的瓶颈，并将水凝胶形成更标准的孔径，同时保持了其高的表面积。

    Process for modifying dielectric materials
    8.
    发明申请
    Process for modifying dielectric materials 审中-公开
    电介质材料改性方法

    公开(公告)号：US20070054501A1

    公开(公告)日：2007-03-08

    申请号：US11210546

    申请日：2005-08-23

    申请人： April Carman ,  Thomas Zemanian ,  Glen Fryxell ,  Daniel Gasper

    发明人： April Carman ,  Thomas Zemanian ,  Glen Fryxell ,  Daniel Gasper

    IPC分类号： H01L21/31

    CPC分类号： H01L21/3105 ,  H01L21/02101

    摘要： The invention relates to a process for modifying materials including, e.g., dielectric materials associated with electronic substrates, semiconductor chips, wafers, and the like, damaged by fabrication processes such as plasma etch processing. The described method improves structural integrity as measured, e.g., by Young's Modulus, as well as hydrophobicity, as measured, e.g., by contact angles at the liquid/surface interface.

    摘要翻译： 本发明涉及一种用于改性材料的方法，包括例如与通过诸如等离子体蚀刻加工的制造工艺损坏的电子基板，半导体芯片，晶片等相关的介电材料。 所描述的方法提高了例如通过杨氏模量测量的结构完整性，以及例如通过液体/表面界面处的接触角测量的疏水性。