摘要:
A probe apparatus with control-position detection means is provided for testing an electrical characteristic of a to-be-tested object formed on a substrate W. The probe apparatus includes a prober chamber, a susceptor provided in the prober chamber for placing thereon a to-be-tested object, and a moving mechanism for moving the susceptor in X-, Y-, Z- and θ-directions. The probe apparatus further includes a probe card having a plurality of probes and opposing the susceptor, and a first optical length-measuring unit. The first length-measuring unit emits light to the surface of the to-be-tested object placed on the susceptor, and detects the Z-directional position of the to-be-tested object based on the light reflected from the object. The probe apparatus can have a second length-measuring unit.
摘要:
A probe apparatus with control-position detection means is provided for testing an electrical characteristic of a to-be-tested object formed on a substrate W. The probe apparatus includes a prober chamber, a susceptor provided in the prober chamber for placing thereon a to-be-tested object, and a moving mechanism for moving the susceptor in X-, Y-, Z- and θ-directions. The probe apparatus further includes a probe card having a plurality of probes and opposing the susceptor, and a first optical length-measuring unit. The first length-measuring unit emits light to the surface of the to-be-tested object placed on the susceptor, and detects the Z-directional position of the to-be-tested object based on the light reflected from the object. The probe apparatus can have a second length-measuring unit.
摘要:
A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.
摘要:
A probe mark reading device for reading probe marks stormed on electrode pads of semi conductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.
摘要:
A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.
摘要:
An object of the present invention is to provide novel genes and gene group involved in cellulose synthesis of microorganisms. The present invention relates to a gene group encoding cellulase, cellulose synthase complex, &bgr;-glucosidase and the like, and to novel &bgr;-glucosidase.
摘要:
A method for the production of a cellulosic product, which comprises: culturing a cellulose-producing microorganism transformed with a gene for an enzyme involved in sucrose metabolism in a medium containing sucrose, allowing the cellulosic product to be produced and accumulated in the medium, and collecting the cellulosic product. By the present method, the cellulosic product can be produced efficiently and economically.
摘要:
A modulation circuit includes a mapping position detector as well as a circuit for differentially phase coding a plurality of separated data streams. The differentially phase coding circuit is adapted to differentially phase code the plurality of data streams for each pulse time and generate a coded signal containing amplitude information. The mapping position detector detects the phase mapping position of the coded signal based on the amplitude information in the coded signal which is output from the differentially phase coding circuit. Information representing the detected phase mapping position is supplied to the differentially phase coding circuit so as to achieve a differential phase coding at a pulse time following one pulse time.
摘要:
A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen barrier films, ferroelectric capacitor structural bodies, a first insulating hydrogen barrier film provided so as to cover the ferroelectric capacitor structural bodies, a second insulating film, local wirings extending on the second insulating film, a second insulating hydrogen barrier film which covers the local wirings, a third insulating film, third plugs which extend through the third insulating film so as to connect to their corresponding conductive hydrogen barrier films, and a first wiring layer extending on the third insulating film.
摘要:
A method of manufacturing a ferroelectric film capacitor includes forming a platinum film used as an electrode material over a whole surface of a silicon substrate, batch-etching the platinum film to form opposite electrodes that serve as a pair of capacitor electrodes, and embedding a ferroelectric film corresponding to a dielectric film of the capacitor into a portion interposed between the pair of opposite electrodes.