摘要:
A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.
摘要:
A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.
摘要:
Disclosed is a method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing the substrate on the surface of a polishing pad and relatively moving the substrate and the polishing pad, the method comprising the steps of: detecting the position of a front surface of the thin film layer to be polished using a first sensor and also detecting the position of a bottom surface of the thin film layer using a second sensor, on the way of the polishing; calculating the residual thickness of the thin film layer on the basis of the detected positions of the front and bottom surfaces of the thin film layer; and controlling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of the thin film layer.
摘要:
Description is made of improvements in a photoelectric microscope which is employed for the measurement of a very small distance. According to this invention, an optical system for making point-symmetric images is disposed in an optical path of an objective of a photoelectric microscope so as to form on an identical focal plane a pair of (two) images of a reference line (or mark) on a test piece which are in the relation of point symmetry to each other, and the distance between the pair of (two) images is measured, whereby the deviating distance of the reference line (or mark) on the test piece from the optic axis of the objective is evaluated. The distance between the pair of images is evaluated by gauging the time difference between two detection signals which are obtained by scanning the pair of images at equal speeds with photoelectric detectors.
摘要:
A semiconductor device fabrication apparatus having multiple processing chambers for different processes, where a substrate is carried in and out in a sophisticated manner, with their different internal ambient conditions being retained, so that the substrate is free from contamination, thereby manufacturing high-quality semiconductor devices at high throughput. The apparatus includes a movable buffer chamber having a wafer carriage means within a transfer chamber which faces a process chamber, an evacuation means which evacuates of gas the buffer chamber, transfer chamber and process chamber independently, a gas feed means, and a control means.
摘要:
Process equipment and method for processing a semiconductor device comprising a buffer chamber, at least one process chamber connected to the buffer chamber through an opening portion, a holding/carrying unit disposed at a position facing the opening portion for holding and carrying a member to be processed such as a wafer, and a carrier unit disposed in the buffer chamber for transferring the member to be processed to and from the holding/carrying unit. The holding/carrying unit includes a flattened surface closely facing the opening portion for holding an atmosphere in the at least one process chamber independently from an atmosphere in the buffer chamber. The opening portion has a flattened surface closely facing the flattened surface of the holding/carrying unit.
摘要:
A pattern printing method includes a step of printing a pattern on a wafer on the basis of a target mark provided on the surface of the wafer which is opposite to the surface thereof on which the pattern is to be printed. Also disclosed is a pattern printing apparatus which comprises detecting means for detecting a target mark provided on the surface of a wafer which is opposite to the surface thereof on which a pattern is to be printed, and pattern printing means for printing the pattern on the pattern printing surface of the wafer on the basis of mark position data obtained by the detecting means.
摘要:
This invention relates to an automatic focusing apparatus, in that a position of a substrate mounted on the base of the apparatus is detected as a pressure value by a first detecting means, such as an air micrometer, in that second detecting means, such as an air micrometer, are provided on a portion of the apparatus to determine a reference pressure, gas supplied into the second detecting means is derived from the same supply source as that of the first detecting means, and further, in that the base can be controlled and moved until the difference between the reference pressure and the detected pressure reaches a predetermined constant value, whereby the surface of the sample can be automatically positioned at a desired focusing position.
摘要:
A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.
摘要:
In order to manufacture a semiconductor device of high performance a small-sized transfer arm mechanism, capable of retaining a predetermined transfer stroke, is put to practical use without any increase in the height of the arm mechanism. The transfer arm includes arcuate portions having center axes different from each other, and restraint generating means for generating restraints in directions where the individual center axes are attracted. This way, a plurality of arms are joined by joints having a structure for transmitting rolling motions to the arcuate portions contacting each other to thereby control the drive shaft of the arcuate portions rotationally and thereby move the arms. This transfer arm mechanism is used in various environments including semiconductor manufacturing, such as DRAMs.