公开(公告)号：US5252133A

公开(公告)日：1993-10-12

申请号：US809122

申请日：1991-12-18

申请人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

发明人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205 ,  H01L21/22 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/45578 ,  C30B25/14

摘要： A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree.

公开(公告)号：US5637153A

公开(公告)日：1997-06-10

申请号：US429159

申请日：1995-04-26

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura ,  Hitoshi Kato

IPC分类号： C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅 通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。 在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于 作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5048800A

公开(公告)日：1991-09-17

申请号：US563345

申请日：1990-08-07

申请人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

发明人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

IPC分类号： C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/00 ,  F27D1/00 ,  H01L21/00

CPC分类号： H01L21/67115 ,  C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/0025 ,  F27D1/0033

摘要： A vertical heat treatment apparatus includes a reaction furnace constituted by a reaction chamber having an inner tube and an outer tube and a heater arranged outside the reaction chamber, a manifold communicating with a lower portion of the reaction chamber to support the reaction chamber and a gas being supplied and exhausted through the mainfold, a hollow vessel, arranged together with the boat in the reaction furnace, for supporting a lower end of a boat having objects, and a plurality of first heat-insulating members detachably arranged in the hollow vessel, wherein the number of the first insulating members is adjusted to adjust a heat-insulating effect. The first heat-insulating member includes a fin unit constituted by fins horizontally arranged at predetermined intervals and spacers for keeping the intervals between the fins.

摘要翻译： 立式热处理装置包括由反应室构成的反应炉，该反应室具有内管和外管以及布置在反应室外部的加热器，与反应室的下部连通以支撑反应室的歧管和气体 通过主折叠供应和排出的中空容器，与反应炉中的船一起布置的用于支撑具有物体的船的下端的中空容器，以及可拆卸地布置在中空容器中的多个第一绝热构件，其中 调整第一绝缘构件的数量以调节绝热效果。 第一绝热构件包括由以预定间隔水平布置的翅片构成的翅片单元和用于保持翅片之间的间隔的间隔件。

公开(公告)号：US5015330A

公开(公告)日：1991-05-14

申请号：US486416

申请日：1990-02-28

申请人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

发明人： Katsuya Okumura ,  Takahiko Moriya ,  Shinji Miyazaki ,  Yoshio Kumagai ,  Susumu Tanaka

IPC分类号： C23C16/02 ,  C23C16/452 ,  C23C16/54 ,  H01J37/32 ,  B44C1/22 ,  B05D3/06 ,  C03C15/00 ,  H01L21/306

CPC分类号： H01J37/32357 ,  C23C16/0245 ,  C23C16/452 ,  C23C16/54 ,  Y10S156/917 ,  Y10S438/905 ,  Y10S438/913

摘要： A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

摘要翻译： 一种成膜方法包括以下步骤：将待处理的多个物体放置在反应容器中，并在加热条件下通过等离子体蚀刻除去放置在反应容器中的待处理物体上的天然氧化起始膜 在停止供给蚀刻气体之后排出蚀刻气体，以停止等离子体的制造，并且在反应容器内供给成膜气体而不使反应容器对空气开放，从而在物体上形成膜。

公开(公告)号：US07575431B2

公开(公告)日：2009-08-18

申请号：US11822282

申请日：2007-07-03

申请人： Atsushi Endo ,  Yoshiyuki Fujita ,  Shinji Miyazaki

发明人： Atsushi Endo ,  Yoshiyuki Fujita ,  Shinji Miyazaki

IPC分类号： F27D1/00

CPC分类号： H01L21/67248 ,  F27B17/0025 ,  H01L21/67109 ,  H01L21/67115

摘要： A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.

摘要翻译： 一种垂直加热装置，用于对多个目标基板进行热处理，所述垂直加热装置一起包括垂直处理容器，其构造成容纳所述目标基板并且在底部具有转移口; 保持器，被构造成在处理容器内沿垂直方向间隔地支撑目标基板; 以及加热器，其设置在所述处理容器的周围，并且被配置为通过所述处理容器的侧壁提供热射线，以便加热所述处理容器的内部。 加热器和处理容器的下端侧之间设置有热缓冲部件，以包围下端侧，并且构造为降低加工器和加工容器内的目标基板之间的热线的下端侧的透射率。

公开(公告)号：US20060081181A1

公开(公告)日：2006-04-20

申请号：US11229841

申请日：2005-09-20

申请人： Shinji Miyazaki ,  Hiroki Fukushima

发明人： Shinji Miyazaki ,  Hiroki Fukushima

IPC分类号： C23C16/00

CPC分类号： C23C16/4405 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/14

摘要： A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from the wafer boat. Subsequently, a clean gas jetting nozzle arranged in the loading area jets a clean gas toward the emptied wafer boat. Fragment of thin film which may readily peel off are blown away from the wafer boat, and are discharged out of the loading area together with the unidirectional flow. Thus, it is possible to avoid wafer contamination due to the unexpected peel-off of thin film fragments from the wafer boat.

摘要翻译： 清洁气体循环通过垂直热处理炉下方的装载区域。 清洁气体单向流过装载区域。 在晶片处理完成之后，晶片舟从热处理炉降低到从晶片舟皿移除晶片的装载区域。 随后，布置在装载区域中的清洁气体喷射喷嘴将清洁气体朝排空的晶片舟喷射。 容易剥离的薄膜碎片从晶舟上吹走，并与单向流一起排出装载区域。 因此，可以避免由于来自晶片舟皿的薄膜碎片的意外剥离而造成的晶片污染。

公开(公告)号：US6044044A

公开(公告)日：2000-03-28

申请号：US106089

申请日：1998-06-29

申请人： Shinji Miyazaki ,  Hiroyasu Inoue ,  Jiro Yoshinari

发明人： Shinji Miyazaki ,  Hiroyasu Inoue ,  Jiro Yoshinari

IPC分类号： G11B11/10 ,  G11B11/105 ,  G11B11/00

CPC分类号： G11B11/10515 ,  G11B11/10584 ,  G11B11/10586

摘要： A magneto-optical recording medium comprises a substrate, and a magnetic multilayer 4 on a surface side thereof. The magnetic multilayer comprises an amplifying layer A.sub.1 and a recording layer R.sub.2 which are laminated together and are each a magnetic layer. A nonmagnetic intermediate layer I.sub.12 is interleaved between the amplifying layer A.sub.1 and the recording layer R.sub.2 to couple them magnetostatically. The nonmagnetic intermediate layer I.sub.12 is made up of a metal oxide and has a thickness of 2 to 30 nm. The magnetic field intensity needed for magnetic field modulation reading or light modulation reading can be lowered.

摘要翻译： 磁光记录介质包括基板和表面侧上的磁性多层体4。 磁性层叠体包括层压在一起并分别为磁性层的放大层A1和记录层R2。 非磁性中间层I12在放大层A1和记录层R2之间进行交织，使其静磁耦合。 非磁性中间层I12由金属氧化物构成，厚度为2〜30nm。 可以降低磁场调制读取或光调制读取所需的磁场强度。

公开(公告)号：US5674637A

公开(公告)日：1997-10-07

申请号：US360964

申请日：1994-12-21

申请人： Shinji Miyazaki ,  Jiro Yoshinari ,  Koji Kobayashi

发明人： Shinji Miyazaki ,  Jiro Yoshinari ,  Koji Kobayashi

IPC分类号： G11B5/66

CPC分类号： G11B5/66 ,  Y10S428/90

摘要： A magnetic recording medium having excellent electromagnetic characteristics, still characteristics and cupping resistance, reduced rust generation and increased durability, comprises a non-magnetic substrate and a magnetic layer formed thereon by oblique deposition, the magnetic layer being composed of at least two ferromagnetic metal thin films containing Co and Ni as main components, in which the Co content of the thin film closest to the substrate is less than 70 atomic per cent and the Co content of the film farthest from the substrate is 75 atomic per cent or more.

摘要翻译： 具有优异的电磁特性，静电特性和耐拔罐性，减少生锈和提高耐久性的磁记录介质包括非磁性基板和通过倾斜沉积在其上形成的磁性层，磁性层由至少两个铁磁性金属薄层 含有Co和Ni作为主要成分的膜，其中最接近基底的薄膜的Co含量小于70原子％，并且离基材最远的膜的Co含量为75原子％以上。

公开(公告)号：US5549979A

公开(公告)日：1996-08-27

申请号：US159422

申请日：1993-11-29

申请人： Shinji Miyazaki ,  Mitsuru Takai ,  Koji Kobayashi

发明人： Shinji Miyazaki ,  Mitsuru Takai ,  Koji Kobayashi

IPC分类号： C23C14/06 ,  G11B5/64 ,  G11B5/66 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B5/85 ,  H01F10/16 ,  H01F41/20

CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/8404 ,  Y10S428/90 ,  Y10T428/12931 ,  Y10T428/30

摘要： A magnetic recording medium comprising a nonmagnetic base, an SiO.sub.x (x=1.2-1.95) undercoat, an under-layer ferromagnetic metal film consisting of a Co--Ni alloy, an SiO.sub.x (x=1.2-1.95) intermediate layer, an upper-layer ferromagnetic metal protective film consisting of a Co--Ni alloy, a diamond-like carbon protective film, and a lubricant layer, formed in the order of mention, the angles of vapor deposition as measured from lines normal to the upper- and under-layer ferromagnetic metal films being all decreasing toward the upper surfaces. The magnetic recording medium is made by forming an SiO.sub.x (x=1.2-1.95) undercoat by vapor deposition on a flexible nonmagnetic base being fed, forming an under-layer ferromagnetic metal film by vapor deposition of a Co--Ni alloy at a large deposition angle on the supply side and at a small deposition angle on the take up side, rewinding the semi-finished product thus obtained, repeating the foregoing process steps, forming a diamond-like carbon protective film, and further forming a lubricant layer over the diamond-like carbon protective film, all within a vacuum chamber.

摘要翻译： 包含非磁性基底，SiOx（x = 1.2-1.95）底涂层的磁记录介质，由Co-Ni合金，SiOx（x = 1.2-1.95）中间层构成的底层强磁性金属膜， 由Co-Ni合金，类金刚石碳保护膜和润滑剂层构成的层状铁磁性金属保护膜，按顺序形成，从垂直于上，下的线的线测得的蒸镀角度， 层铁磁性金属膜全部向上表面减小。 磁记录介质是通过气相沉积形成SiOx（x = 1.2-1.95）底涂层而制成的，该柔性非磁性基体被馈送，通过Co-Ni合金在大量沉积下气相沉积形成底层强磁性金属膜 在供给侧的角度和在卷绕侧的小沉积角度，重新卷绕由此获得的半成品，重复上述工艺步骤，形成类金刚石碳保护膜，并进一步在金刚石上形成润滑剂层 样的碳保护膜，都在真空室内。