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公开(公告)号：US07988842B2
公开(公告)日：2011-08-02
申请号：US12179352
申请日：2008-07-24
申请人： Shinji Tachibana , Koji Shimizu , Tomohiro Kawase , Naoyuki Omura , Toshihisa Isono , Kazuyoshi Nishimoto
发明人： Shinji Tachibana , Koji Shimizu , Tomohiro Kawase , Naoyuki Omura , Toshihisa Isono , Kazuyoshi Nishimoto
CPC分类号： C25D21/18
摘要： A continuous copper electroplating method wherein copper is continuously plated on a workpiece to be placed in a plating vessel accommodating a copper sulfate plating bath containing organic additives by use of a soluble or insoluble anode and a workpiece as a cathode, the method including overflowing the plating bath from the plating vessel in an overflow vessel under which the plating bath in the overflow vessel is returned to the plating vessel, providing an oxidative decomposition vessel, and returning a plating bath from the oxidative decomposition vessel through the overflow vessel to the plating vessel to circulate the plating bath between the plating vessel and oxidative decomposition vessel, and metallic copper is immersed in the plating bath in the oxidative decomposition vessel and exposed to air bubbling, so that decomposed/degenerated organic products formed by decomposition or degeneration produced during the copper electroplating can be oxidatively decomposed.
摘要翻译： 一种连续铜电镀方法，其中铜连续地镀在工件上，以通过使用可溶性或不溶性阳极和工件作为阴极而放置在容纳含有有机添加剂的硫酸铜电镀液的电镀槽中，该方法包括使镀层溢出 在溢流容器中从电镀槽中洗涤，在溢流容器中将溢流容器中的电镀液返回到电镀槽中，提供氧化分解容器，并将来自氧化分解容器的电镀槽通过溢流容器返回到电镀槽 在电镀槽和氧化分解容器之间循环电镀槽，将金属铜浸入氧化分解容器中的电镀槽中，暴露于鼓泡状态，从而在铜电镀期间产生的分解/退化的有机产物 可以氧化分解。
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公开(公告)号：US20090026083A1
公开(公告)日：2009-01-29
申请号：US12179352
申请日：2008-07-24
申请人： Shinji TACHIBANA , Koji Shimizu , Tomohiro Kawase , Naoyuki Omura , Toshihisa Isono , Kazuyoshi Nishimoto
发明人： Shinji TACHIBANA , Koji Shimizu , Tomohiro Kawase , Naoyuki Omura , Toshihisa Isono , Kazuyoshi Nishimoto
IPC分类号： C25D21/18
CPC分类号： C25D21/18
摘要： A continuous copper electroplating method wherein copper is continuously plated on a workpiece to be placed in a plating vessel accommodating a copper sulfate plating bath containing organic additives by use of a soluble or insoluble anode and a workpiece as a cathode, the method including overflowing the plating bath from the plating vessel in an lo overflow vessel under which the plating bath in the overflow vessel is returned to the plating vessel, providing an oxidative decomposition vessel, and returning a plating bath from the oxidative decomposition vessel through the overflow vessel to the plating vessel to circulate the plating bath between the plating vessel and oxidative decomposition vessel, and metallic copper is immersed in the plating bath in the oxidative decomposition vessel and exposed to air bubbling, so that decomposed/degenerated organic products formed by decomposition or degeneration produced during the copper electroplating can be oxidatively decomposed.
摘要翻译： 一种连续铜电镀方法，其中铜连续地镀在工件上，以通过使用可溶性或不溶性阳极和工件作为阴极而放置在容纳含有有机添加剂的硫酸铜电镀液的电镀槽中，该方法包括使镀层溢出 在溢流容器中从电镀容器中洗涤，溢流容器内的电镀槽返回到电镀槽中，提供氧化分解容器，并将来自氧化分解容器的电镀槽通过溢流容器返回到电镀容器 使电镀槽和氧化分解容器之间的电镀槽循环，将金属铜浸入氧化分解容器中的电镀槽中，暴露于鼓泡状态，使得在铜中产生的分解或退化形成的分解/退化的有机产物 电镀可能被氧化分解。
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公开(公告)号：US08801912B2
公开(公告)日：2014-08-12
申请号：US12401113
申请日：2009-03-10
申请人： Naoyuki Omura , Toshihisa Isono , Koji Shimizu , Shinji Tachibana , Tomohiro Kawase , Shunsaku Hoshi
发明人： Naoyuki Omura , Toshihisa Isono , Koji Shimizu , Shinji Tachibana , Tomohiro Kawase , Shunsaku Hoshi
CPC分类号： C25D17/00 , C25D3/38 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/18 , H05K3/241
摘要： Disclosed is a method for a repeated electroplating of a workpiece to be plated as a cathode by using an insoluble anode in a plating vessel accommodating a copper sulfate plating bath, wherein a copper dissolution vessel different from the plating vessel is provided, the plating bath is transferred to the copper dissolution vessel and is returned from the copper dissolution vessel to the plating vessel for circulating the plating bath between the plating vessel and the copper dissolution vessel, copper ion supplying salt is charged into the copper dissolution vessel and dissolved in the plating bath so that copper ions consumed by the plating can be replenished, and the workpiece to be plated is continuously electroplated, characterized in that the plating bath is permitted to transfer between the anode side and the cathode side, and the plating bath is returned to vicinity of the anode in the return of the plating bath from the copper dissolution vessel to the plating vessel. Plating performance impairing components, which are produced when the copper ion supplying salt is dissolved in the plating bath for replenishing the copper ions, are oxidized and decomposed, whereby defective plating due to the presence of the plating performance impairing components can be prevented.
摘要翻译： 公开了一种通过在容纳硫酸铜电镀浴的电镀槽中使用不溶性阳极来重复电镀作为阴极的工件的方法，其中提供了不同于电镀槽的铜溶解容器，电镀浴是 转移到铜溶解容器中，并从铜溶解容器返回到电镀槽，用于使电镀槽和铜溶解容器之间的电镀槽循环，将铜离子供应盐装入铜溶解容器中并溶解在镀浴中 使得可以补充由电镀消耗的铜离子，并且将被镀工件连续电镀，其特征在于允许电镀液在阳极侧和阴极侧之间转移，电镀浴返回到 阳极将电镀液从铜溶解容器返回到电镀槽中。 当铜离子供应盐溶解在用于补充铜离子的镀浴中时产生的电镀性能损害部件被氧化分解，从而可以防止由于存在电镀性能损害部件而导致的不良电镀。
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公开(公告)号：US07892411B2
公开(公告)日：2011-02-22
申请号：US12187918
申请日：2008-08-07
摘要： Disclosed herein is an electrolytic copper plating process for electroplating copper on workpieces in a copper sulfate plating bath filled in a plating tank and containing an organic additive while using a soluble anode or insoluble anode as an anode and the workpieces as cathodes, including the steps of, setting a bath current density at not higher than 5 A/L, immersing metal copper in a region of the copper sulfate plating bath, the region being apart from a region between the anode and the cathode and also from regions adjacent the anode and cathode, respectively, such that a neighborhood of the thus-immersed metal copper can be used as an oxidative decomposition region, setting an immersed area of the metal copper at not smaller than 0.001 dm2/L based on the plating bath, and applying air bubbling to the oxidative decomposition region at not lower than 0.01 L/dm2·min based on the immersed area.
摘要翻译： 本发明公开了一种电解铜电镀工艺，该方法是在使用可溶性阳极或不溶性阳极作为阳极并将工件作为阴极的情况下，在填充于镀槽中的含硫酸铜电镀液中的铜上电镀铜并含有有机添加剂， 设定浴电流密度不高于5A / L，将金属铜浸入硫酸铜电镀槽区域，该区域与阳极和阴极之间的区域以及与阳极和阴极相邻的区域分开 ，使得这样浸入的金属铜的附近可以用作氧化分解区域，基于电镀槽将金属铜的浸渍面积设定为不小于0.001dm 2 / L，并将空气鼓泡 氧化分解区域根据浸渍面积不低于0.01 L / dm2·min。
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公开(公告)号：US08679317B2
公开(公告)日：2014-03-25
申请号：US12599436
申请日：2007-05-21
CPC分类号： C25D3/38 , C25D3/00 , C25D3/02 , H01L21/02 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H05K3/423 , H05K3/424
摘要： A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.
摘要翻译： 一种铜电镀槽，其可用于填充形成在包含水溶性铜盐，硫酸和氯离子的基底上的非通孔，并且还包含作为添加剂的增白剂，载体和矫味剂，其中所述矫平剂含有 含有在溶液中可阳离子化的季氮，叔氮或二者的至少一种水溶性聚合物。 在铜电镀槽中，通过将水溶性聚合物的季氮与叔氮比例变更为容易控制，可以容易地控制在基板上形成的非贯通孔的填充力，以适应孔的尺寸 用作平整机，其使得能够对各种尺寸的非通孔的铜电镀具有很好的尺寸。
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公开(公告)号：US20100219081A1
公开(公告)日：2010-09-02
申请号：US12599436
申请日：2007-05-21
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , C25D3/00 , C25D3/02 , H01L21/02 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H05K3/423 , H05K3/424
摘要： A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.
摘要翻译： 一种铜电镀槽，其可用于填充形成在包含水溶性铜盐，硫酸和氯离子的基底上的非通孔，并且还包含作为添加剂的增白剂，载体和矫味剂，其中所述矫平剂含有 含有在溶液中可阳离子化的季氮，叔氮或二者的至少一种水溶性聚合物。 在铜电镀槽中，通过将水溶性聚合物的季氮与叔氮比例变更为容易控制，可以容易地控制在基板上形成的非贯通孔的填充力，以适应孔的尺寸 用作平整机，其使得能够对各种尺寸的非通孔的铜电镀具有很好的尺寸。
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公开(公告)号：US07220347B2
公开(公告)日：2007-05-22
申请号：US11181856
申请日：2005-07-15
摘要： An electrolytic copper plating bath used for via-filling plating of blind via-holes formed on a substrate, containing a water-soluble copper salt, sulfuric acid, chloride ions, and a leveler as an additive, wherein the leveler is either one or both of a quaternary polyvinylimidazolium compound represented by the following formula (1) and a copolymer, represented by the following formula (2), of vinylpyrrolidone and a quaternary vinylimidazolium compound: where R1 and R2 are each an alkyl group, m is an integer of not less than 2, and p and q are each an integer of not less than 1, and a copper electroplating method for via-filling plating of blind via-holes formed on a substrate by use of the electrolytic copper plating bath.
摘要翻译： 一种用于通孔填充电镀铜的电解镀铜浴，其形成在基底上，含有水溶性铜盐，硫酸，氯离子和矫味剂作为添加剂，其中矫直机是一个或两个 由下式（1）表示的季铵聚乙烯基咪唑化合物和由下式（2）表示的共聚物，乙烯基吡咯烷酮和季乙烯基咪唑鎓化合物：其中R 1和R 2 各自为烷基，m为不小于2的整数，p和q各自为1以上的整数，形成盲孔的通孔充电电镀铜电镀法 通过使用电解镀铜浴在基板上。
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公开(公告)号：US20060207886A1
公开(公告)日：2006-09-21
申请号：US11181856
申请日：2005-07-15
IPC分类号： C25D3/38
摘要： An electrolytic copper plating bath used for via-filling plating of blind via-holes formed on a substrate, containing a water-soluble copper salt, sulfuric acid, chloride ions, and a leveler as an additive, wherein the leveler is either one or both of a quaternary polyvinylimidazolium compound represented by the following formula (1) and a copolymer, represented by the following formula (2), of vinylpyrrolidone and a quaternary vinylimidazolium compound: where R1 and R2 are each an alkyl group, m is an integer of not less than 2, and p and q are each an integer of not less than 1, and a copper electroplating method for via-filling plating of blind via-holes formed on a substrate by use of the electrolytic copper plating bath.
摘要翻译： 一种用于通孔填充电镀铜的电解镀铜浴，其形成在基底上，含有水溶性铜盐，硫酸，氯离子和矫味剂作为添加剂，其中矫直机是一个或两个 由下式（1）表示的季铵聚乙烯基咪唑化合物和由下式（2）表示的共聚物，乙烯基吡咯烷酮和季乙烯基咪唑鎓化合物：其中R 1和R 2 各自为烷基，m为不小于2的整数，p和q各自为1以上的整数，形成盲孔的通孔充电电镀铜电镀法 通过使用电解镀铜浴在基板上。
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公开(公告)号：US08361226B2
公开(公告)日：2013-01-29
申请号：US12067936
申请日：2007-03-22
IPC分类号： C30B21/02
CPC分类号： C30B29/403 , C30B23/00
摘要： This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12), and a step of sublimating the source material (1) to grow AlxGa1-xN (0
摘要翻译： 作为通过升华生长Al x Ga 1-x N单晶（4）的方法的III族氮化物单晶生长方法具有将源材料（1）放置在坩埚（12）中的步骤，并且 使源材料（1）升华以在坩埚（12）中生长Al x Ga 1-x N（0
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10.发明授权III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device 有权III族氮化物晶体制造方法，III族氮化物晶体衬底和III族氮化物半导体器件公开(公告)号：US07998847B2
公开(公告)日：2011-08-16
申请号：US12297311
申请日：2007-11-15
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L21/36
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally.The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (1t) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译： 提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。 本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤 在<0001>方向上相对于矩阵（1s）反转; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（1t）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。
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