公开(公告)号：US5221859A

公开(公告)日：1993-06-22

申请号：US660944

申请日：1991-02-26

申请人： Shiro Kobayashi ,  Narutoshi Kazama ,  Masahiko Itoh ,  Noriyuki Ohnaka

发明人： Shiro Kobayashi ,  Narutoshi Kazama ,  Masahiko Itoh ,  Noriyuki Ohnaka

IPC分类号： H01L23/495 ,  H05K3/34

CPC分类号： H01L23/49582 ,  H01L23/4951 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/20753 ,  H05K3/3421

摘要： A lead frame of a plastic encapsulated type semiconductor device is provided with a coating film which has a solderability higher than a solderability of a basic metal of the lead frame, and the coating film has a corrosion potential higher than a corrosion potential of the basic metal. The coating film protects the basic metal from corrosion caused by the plastic encapsulated member. The coating film of the lead frame made of a Fe-Ni alloy is an alloy comprising metal selected from Mo, W, Au, Cr, Cu, metals of the platinum group and a metal selected from Fe, Co, and Ni.

摘要翻译： 塑料封装型半导体器件的引线框架设置有具有比引线框架的碱性金属的可焊性高的可焊性的涂膜，并且涂膜具有高于碱性金属的腐蚀电位的腐蚀电位 。 涂膜可保护碱性金属免受塑料封装件引起的腐蚀。 由Fe-Ni合金制成的引线框架的涂膜是包含选自Mo，W，Au，Cr，Cu的金属，铂族金属和选自Fe，Co和Ni的金属的合金。

公开(公告)号：US4821148A

公开(公告)日：1989-04-11

申请号：US870399

申请日：1986-06-04

申请人： Shiro Kobayashi ,  Masahiko Itoh ,  Akira Minato

发明人： Shiro Kobayashi ,  Masahiko Itoh ,  Akira Minato

IPC分类号： H01L23/02 ,  H01L21/56 ,  H01L23/28 ,  H01L23/29 ,  H01L23/31 ,  H01L23/49 ,  H01L23/30

CPC分类号： H01L23/293 ,  H01L23/3135 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3011

摘要： A silver electrode (4) on a lead frame (2) is bonded to an aluminum electrode (5) on a silicon chip (1) with a copper wire (3). The resulting semiconductor device was immersed in a solution of benzotriazole in ethyl alcohol. An Ag-benzotriazole film (6) was formed on the surface of the silver electrode (4) and a Cu-benzotriazole film (7) was formed on the surface of the copper wire (3), while an Al-benzotriazole film (8) was formed on the surface of the aluminum electrode (5). Even if water penetrates into the semiconductor device, the silver electrode (4), the aluminum electrode (5) and the copper wire (3) are effectively protected by the anti-corrosive Ag-benzotriazole film (6), Cu-benzotriazole film (7) and Al-benzotriazole film (8) to exhibit excellent damp-proof.

摘要翻译： 引线框架（2）上的银电极（4）通过铜线（3）与硅芯片（1）上的铝电极（5）接合。 将所得半导体器件浸入苯并三唑在乙醇中的溶液中。 在银电极（4）的表面上形成Ag-苯并三唑膜（6），在铜线（3）的表面上形成Cu-苯并三唑膜（7），而Al-苯并三唑膜 ）形成在铝电极（5）的表面上。 即使水渗透到半导体器件中，银电极（4），铝电极（5）和铜线（3）也被抗腐蚀的Ag-苯并三唑膜（6），Cu-苯并三唑膜 7）和Al-苯并三唑膜（8），具有优异的防潮性能。

公开(公告)号：US5023698A

公开(公告)日：1991-06-11

申请号：US327609

申请日：1989-03-23

申请人： Shiro Kobayashi ,  Emiko Murofushi ,  Masahiko Itoh

发明人： Shiro Kobayashi ,  Emiko Murofushi ,  Masahiko Itoh

IPC分类号： H01L21/3205 ,  H01L21/28 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43

CPC分类号： H01L23/53233 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85447 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/15747 ,  H01L2924/181

摘要： A metallization film layer disposed on a semiconductor chip is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities. The metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn. Cu alloy as the metallization film layer improves corrosion resistance by adding a trance amount of a metal element less noble than Cu within such a range where electric conductivity is not much reduced to Cu without lowering high electric conductivity, high heat resistance and high electro-migration resistance of Cu.

公开(公告)号：US5055356A

公开(公告)日：1991-10-08

申请号：US386218

申请日：1989-07-28

申请人： Emiko Minowa ,  Shiro Kobayashi ,  Masahiko Itoh

发明人： Emiko Minowa ,  Shiro Kobayashi ,  Masahiko Itoh

IPC分类号： C25D11/18 ,  C23C22/56 ,  C23C22/68 ,  C25D9/12 ,  C25D11/06 ,  C25D11/16 ,  C25D11/36 ,  C25D11/38 ,  G11B7/24 ,  G11B7/258 ,  G11B7/26 ,  H01G9/00 ,  H01G9/04

CPC分类号： H01G9/0032 ,  C23C22/56 ,  C23C22/68 ,  C25D11/06 ,  C25D11/16 ,  G11B7/24 ,  G11B7/258 ,  G11B7/26 ,  G11B7/2585 ,  Y10S428/913 ,  Y10T428/21 ,  Y10T428/31 ,  Y10T428/31678

摘要： A body, particularly a thin layer, of aluminium or aluminium alloy is given a corrosion-resistant bright dense barrier-type protective layer. The layer has a thickness in the range 50 to 500 nm and comprises aluminium oxide and a chelate complex of aluminium and at least one organic chelating compound. The layer is formed by contacting the surface with a solution of the chelating compound of pH 2 to 7 and, optionally, performing oxidative electrolysis.

公开(公告)号：US4977443A

公开(公告)日：1990-12-11

申请号：US409139

申请日：1989-09-19

申请人： Shiro Kobayashi ,  Masahiko Itoh ,  Masakiyo Izumiya

发明人： Shiro Kobayashi ,  Masahiko Itoh ,  Masakiyo Izumiya

IPC分类号： H01L23/473 ,  H01L23/433

CPC分类号： H01L23/4332 ,  H01L2224/16 ,  H01L2224/73253

摘要： A semiconductor module comprises semiconductor elements, cooling structures for cooling the semiconductor elements by liquid refrigerant, and a housing for accommodating the semiconductor elements and the cooling structures, wherein within the housing, there is supplied or enclosed sealingly a reactive gas which reacts with ions of a metal constituting the cooling structures to form a chemical compound hard to dissolve to the refrigerant but does not react with the metal itself constituting the cooling structures.

公开(公告)号：US09674647B2

公开(公告)日：2017-06-06

申请号：US15200278

申请日：2016-07-01

申请人： Masahiko Itoh

发明人： Masahiko Itoh

IPC分类号： H04W4/00 ,  H04L29/08 ,  H04L12/66

CPC分类号： G09G5/003 ,  G06F3/1423 ,  G06F3/147 ,  G09G2370/022 ,  G09G2370/042 ,  G09G2370/16 ,  H04B11/00 ,  H04L12/66 ,  H04L67/18 ,  H04M1/7253 ,  H04M1/72533 ,  H04M1/72572 ,  H04M2250/06 ,  H04N7/002 ,  H04W4/80 ,  H04W4/90

摘要： An information processing apparatus uses a display device to provide display information. The information processing apparatus includes processing circuitry configured to store information relating to a position of an output device that outputs information relating to the output device, and information relating to the display device corresponding to the position of the output device; receive information of a transmission source and the information of the output device acquired by the transmission source, from the transmission source capable of communicating with the information processing apparatus; identify a position of the transmission source, based on the received information; and control the display device corresponding to the position of the transmission source to display the display information, according to the information of the transmission source.

公开(公告)号：US20080115043A1

公开(公告)日：2008-05-15

申请号：US11984718

申请日：2007-11-21

申请人： Kazutoshi Shimizume ,  Mamoru Akita ,  Masahiko Itoh

发明人： Kazutoshi Shimizume ,  Mamoru Akita ,  Masahiko Itoh

IPC分类号： G06F11/10

CPC分类号： G06F11/1068

摘要： A semiconductor memory device able to strengthen an error correction capability, able to shorten a write time and/or a read time, able to make a redundant memory unnecessary or smaller, and consequently able to achieve a reduction of size and a reduction of cost, provided with a data input portion for receiving 1 page's worth of data, dividing it to a plurality of code words, generating and adding check code (parity data) for each code word, successively forming main code words and transferring the same to a bank (A) or a bank (B), and a data output portion for receiving 1 page's worth of data including main code words transferred from the data latch circuit, correcting the error data when there is within a predetermined number of error data for each main code word, adding the error information for read each read code word except check code (parity data), and transferring the same to a host side, and a signal processing system using the same.

摘要翻译： 一种能够加强纠错能力的半导体存储器件，能够缩短写入时间和/或读取时间，能够使冗余存储器不必要或更小，从而能够实现尺寸的减小和成本的降低， 设置有用于接收1页数据的数据输入部分，将其划分为多个码字，为每个码字生成和添加校验码（奇偶校验数据），连续形成主码字并将其传送到银行（ A）或存储体（B），以及数据输出部分，用于接收包括从数据锁存电路传送的主代码字的1页数据的数据，当在每个主代码的预定数量的错误数据内存在时纠正错误数据 添加用于读取除检查码（奇偶校验数据）之外的每个读取码字的错误信息，并将其传送到主机侧，以及使用该错误信息的信号处理系统。

公开(公告)号：US20050268208A1

公开(公告)日：2005-12-01

申请号：US11137442

申请日：2005-05-26

申请人： Kazutoshi Shimizume ,  Mamoru Akita ,  Masahiko Itoh

发明人： Kazutoshi Shimizume ,  Mamoru Akita ,  Masahiko Itoh

IPC分类号： G11C16/02 ,  G06F11/10 ,  G11C16/06 ,  G11C29/00 ,  H03M13/00

CPC分类号： G06F11/1068

摘要： A semiconductor memory device able to strengthen an error correction capability, able to shorten a write time and/or a read time, able to make a redundant memory unnecessary or smaller, and consequently able to achieve a reduction of size and a reduction of cost, provided with a data input portion for receiving 1 page's worth of data, dividing it to a plurality of code words, generating and adding check code (parity data), for each code word, successively forming main code words and transferring the same to a bank (A) or a bank (B), and a data output portion for receiving 1 page's worth of data including main code words transferred from the data latch circuit, correcting the error data when there is within a predetermined number of error data for each main code word, adding the error information for read each read code word except check code (parity data), and transferring the same to a host side, and a signal processing system using the same.

摘要翻译： 一种能够加强纠错能力的半导体存储器件，能够缩短写入时间和/或读取时间，能够使冗余存储器不必要或更小，从而能够实现尺寸的减小和成本的降低， 设置有用于接收1页数据的数据输入部分，将其划分为多个代码字，为每个代码字生成并添加校验码（奇偶校验数据），依次形成主代码字并将其传送到存储体 （A）或存储体（B），以及数据输出部分，用于接收包含从数据锁存电路传送的主代码字的1页数据的数据，当在每个主要的预定数量的错误数据内存在时，校正错误数据 添加用于读取除检查码（奇偶校验数据）之外的每个读取码字的错误信息，并将其传送到主机侧，以及使用该错误信息的信号处理系统。

公开(公告)号：US4994157A

公开(公告)日：1991-02-19

申请号：US426761

申请日：1989-10-26

申请人： Masahiko Itoh ,  Heihatiro Midorikawa ,  Masakiyo Izumiya ,  Teruo Yamaguchi

发明人： Masahiko Itoh ,  Heihatiro Midorikawa ,  Masakiyo Izumiya ,  Teruo Yamaguchi

IPC分类号： B21B45/06 ,  C23G1/08 ,  C25F1/06 ,  C25F7/00

CPC分类号： C25F1/06 ,  C25F7/00

摘要： A method of descaling stainless steel which provides a smooth and glossy surface, comprises the steps of (a) anode-electrolyzing stainless steel having scales thereon in an aqueous neutral salt solution, (b) anode-electrolyzing or immersing the stainless steel in an aqueous alkaline solution. Steps (a) and (b) are performed in the order of either (a), (b), (a). The method further comprises the step of cathode-electrolyzing the stainless steel treated in the previous two steps in an aqueous nitric acid solution or immersing it in an aqueous solution of a mixture containing nitric acid and fluoric acid.

公开(公告)号：US4487036A

公开(公告)日：1984-12-11

申请号：US532109

申请日：1983-09-14

申请人： Masahiko Itoh ,  Heihatiro Midorikawa ,  Akira Minato ,  Kenzi Machizawa

发明人： Masahiko Itoh ,  Heihatiro Midorikawa ,  Akira Minato ,  Kenzi Machizawa

IPC分类号： F25B47/00 ,  C23F13/00 ,  F25B33/00 ,  F25B43/00

CPC分类号： F25B33/00 ,  F25B2333/003

摘要： In a hermetically circulating absorption type refrigerator including a regenerator, a condenser, an evaporator, an absorber and a heat exchanger, the regenerator has an absorbing solution heating tube flux provided between tube plates. The tube plates are encased within a shell of the regenerator. Non-soluble electrodes are arranged between each of the tube plates and the shell. Then, an anti-corrosive current is made to flow through at least one of an end portion of the heating tube, the tube plates and the shell to thereby enhance the anti-corrosion effect together with an anti-corrosive agent or inhibitor.

摘要翻译： 在包括再生器，冷凝器，蒸发器，吸收器和热交换器的气密循环吸收式冰箱中，再生器具有设置在管板之间的吸收溶液加热管通量。 管板被封装在再生器的壳体内。 不溶性电极布置在每个管板和壳体之间。 然后，使防腐蚀电流流过加热管的端部，管板和壳体中的至少一个，从而与抗腐蚀剂或抑制剂一起增强防腐蚀效果。