公开(公告)号：US5835516A

公开(公告)日：1998-11-10

申请号：US569881

申请日：1995-12-08

申请人： Motoharu Miyashita ,  Hirotaka Kizuki ,  Yasuaki Yoshida ,  Yutaka Mihashi ,  Yasutomo Kajikawa ,  Shoichi Karakida ,  Yuji Ohkura

发明人： Motoharu Miyashita ,  Hirotaka Kizuki ,  Yasuaki Yoshida ,  Yutaka Mihashi ,  Yasutomo Kajikawa ,  Shoichi Karakida ,  Yuji Ohkura

IPC分类号： H01L21/306 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19 ,  H01L21/20

CPC分类号： H01S5/2231 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/32316

摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.

摘要翻译： 一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构， 以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层 在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。 因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。 电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

公开(公告)号：US5822350A

公开(公告)日：1998-10-13

申请号：US711744

申请日：1996-09-10

申请人： Takashi Nishimura ,  Shoichi Karakida ,  Motoharu Miyashita ,  Diethard Marx

发明人： Takashi Nishimura ,  Shoichi Karakida ,  Motoharu Miyashita ,  Diethard Marx

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2205 ,  H01S5/221 ,  H01S5/2227 ,  H01S5/3432

摘要： A semiconductor laser includes a ridge structure includes a cladding layer having a thermal expansion coefficient. Current blocking structures are disposed at both sides of the ridge structure and include Al.sub.x Ga.sub.1-x As first current blocking layers having an Al composition x larger than 0.7 and contacting the ridge structure. In this structure, even when the Al composition of the first current blocking layers is reduced at both sides of the ridge structure, the wavelength of light absorbed by the first current blocking layers does not exceed the wavelength of laser light produced in the active layer. Therefore, unwanted absorption of the laser light at both sides of the ridge structure is avoided, resulting in a semiconductor laser with improved laser characteristics.

摘要翻译： 半导体激光器包括具有热膨胀系数的包层的脊结构。 电流阻挡结构设置在脊结构的两侧，并且包括Al x Ga 1-x As具有大于0.7的Al组分x并接触脊结构的第一电流阻挡层。 在该结构中，即使当第一电流阻挡层的Al组成在脊结构的两侧减小时，由第一电流阻挡层吸收的光的波长也不会超过在有源层中产生的激光的波长。 因此，避免了在脊结构的两侧不必要地吸收激光，导致具有改善的激光特性的半导体激光器。

公开(公告)号：US5805628A

公开(公告)日：1998-09-08

申请号：US735637

申请日：1996-10-23

申请人： Shoichi Karakida ,  Norio Hayafuji ,  Tatsuya Kimura ,  Motoharu Miyashita ,  Hirotaka Kizuki ,  Takashi Nishimura

发明人： Shoichi Karakida ,  Norio Hayafuji ,  Tatsuya Kimura ,  Motoharu Miyashita ,  Hirotaka Kizuki ,  Takashi Nishimura

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/223 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/2231 ,  H01S5/1064 ,  H01S5/2077 ,  H01S5/3432

摘要： A semiconductor laser device includes a semiconductor substrate of a first conductivity type; opposed light emitting facets; a double heterojunction structure disposed on the semiconductor substrate and including an optical waveguide that extends between the facets and comprises a light emitting region and a lens region, the lens region being between the light emitting region and one of the facets, the double heterojunction structure including a plurality of AlGaAs series compound semiconductor layers which are thicker in the light emitting region than in the lens region; and a current blocking structure disposed on both sides of the double heterojunction structure and including a lower AlGaAs series compound semiconductor layer of the first conductivity type, an intermediate AlGaAs series compound semiconductor layer of a second conductivity type, opposite the first conductivity type, and an upper AlGaAs series compound semiconductor layer of the first conductivity type. Therefore, a reactive current that does not contribute to laser oscillation is prevented from flowing through the current blocking structure.

摘要翻译： 半导体激光器件包括第一导电类型的半导体衬底; 相对的发光面; 双异质结结构，其设置在所述半导体衬底上，并且包括在所述面之间延伸并且包括发光区域和透镜区域的光波导，所述透镜区域在所述发光区域和所述面之一之间，所述双异质结结构包括 多个AlGaAs系化合物半导体层，其在发光区域比透镜区域厚; 以及设置在双异质结结构的两侧上的电流阻挡结构，并且包括第一导电类型的下AlGaAs系化合物半导体层，与第一导电类型相反的第二导电类型的中间AlGaAs系化合物半导体层和 第一导电类型的上AlGaAs系化合物半导体层。 因此，防止无助于激光振荡的无功电流流过电流阻挡结构。

公开(公告)号：US5673283A

公开(公告)日：1997-09-30

申请号：US613237

申请日：1996-03-08

申请人： Yasutomo Kajikawa ,  Motoharu Miyashita ,  Shoichi Karakida ,  Akihiro Shima

发明人： Yasutomo Kajikawa ,  Motoharu Miyashita ,  Shoichi Karakida ,  Akihiro Shima

IPC分类号： H01L29/06 ,  H01S5/00 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/34313

摘要： A semiconductor device includes a semiconductor substrate, a strained multi-quantum well with alternatingly laminated first barrier layers and well layers with second barrier layers as outermost layers of the strained MQW structure. The strained MQW structure has a safety factor K.sub.safe =3.9; and ##EQU1## Therefore, it is possible to make the strained MQW structure have a sufficient margin with respect to critical conditions concerning the generation of dislocations, and deterioration of operational characteristics in continuous operation of the semiconductor device can be suppressed so that the reliability of the semiconductor device is enhanced.

摘要翻译： 半导体器件包括半导体衬底，具有交替层叠的第一势垒层的应变多量子阱和具有作为应变MQW结构的最外层的第二阻挡层的阱层。 应变MQW结构具有安全系数Ksafe = 3.9; 因此，可以使应变MQW结构相对于关于产生位错的关键条件具有足够的余量，并且可以抑制半导体器件的连续操作中的操作特性的劣化，从而可靠性 增强了半导体器件。

公开(公告)号：US5887011A

公开(公告)日：1999-03-23

申请号：US801144

申请日：1997-02-18

申请人： Yuji Ohkura ,  Motoharu Miyashita ,  Shoichi Karakida

发明人： Yuji Ohkura ,  Motoharu Miyashita ,  Shoichi Karakida

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S2304/04 ,  H01S5/2206 ,  H01S5/3432

摘要： A semiconductor laser includes a first conductivity type GaAs substrate; a AlGaAs double heterojunction structure disposed on the GaAs substrate and including an upper cladding layer having a mesa ridge stripe with a side surface that makes an angle larger than 90.degree. with a front surface of the upper cladding layer; a first current blocking layer of first conductivity type AlGaAs; and a second current blocking layer of first conductivity type AlGaAs, the first and second current blocking layers covering the mesa ridge stripe. The Al compositions of the first and second current blocking layers are larger than that of the upper cladding layer, maintaining an equivalent refractive index of an active region higher than that of other portions of the semiconductor laser. As a result, the differences between the lattice constant of the second current blocking layer and the GaAs substrate or the AlGaAs upper cladding layer are smaller than in prior art semiconductor lasers. Since the second current blocking layer is in the vicinity of the active region in the mesa ridge stripe, stress applied to the active region is reduced, thereby producing a semiconductor laser that facilitates ridge width control and burying layer growth, and with improved reliability.

摘要翻译： 半导体激光器包括第一导电型GaAs衬底; AlGaAs双异质结结构，其设置在所述GaAs衬底上，并且包括具有与所述上包层的前表面成大于90°的侧面的台面脊条的上包层; 第一导电型AlGaAs的第一电流阻挡层; 以及第一导电型AlGaAs的第二电流阻挡层，所述第一和第二电流阻挡层覆盖所述台面脊状条纹。 第一和第二电流阻挡层的Al组成大于上包层的Al组成，保持有源区的等效折射率高于半导体激光器的其它部分的折射率。 结果，第二电流阻挡层和GaAs衬底或AlGaAs上覆层的晶格常数之间的差异比现有技术的半导体激光器小。 由于第二电流阻挡层位于台脊条带中的有源区附近，所以施加到有源区的应力减小，从而产生有利于脊宽度控制和掩埋层生长以及提高可靠性的半导体激光器。

公开(公告)号：US09330986B2

公开(公告)日：2016-05-03

申请号：US14233895

申请日：2011-08-02

申请人： Shoichi Karakida

发明人： Shoichi Karakida

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18 ,  G01R31/26

CPC分类号： H01L22/12 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： The invention includes: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution.

摘要翻译： 本发明包括：在第一导电类型的半导体衬底的两个表面上形成纹理结构的第一工艺; 测量其上形成纹理结构的半导体衬底的两个表面的反射率分布的第二过程; 形成杂质扩散层的第三工序，其中第二导电类型的杂质元素扩散到半导体衬底的两个反射率分布较窄的一个表面上; 在杂质扩散层上形成具有预定图案并与该杂质扩散层电连接的受光面侧电极的第四工序; 以及在反射率分布更宽的半导体衬底的两个表面的另一表面上形成背面侧电极的第五工序。

公开(公告)号：US20080105297A1

公开(公告)日：2008-05-08

申请号：US11547656

申请日：2005-11-28

申请人： Takahiko Nishida ,  Mitsunori Nakatani ,  Hiroaki Morikawa ,  Shoichi Karakida

发明人： Takahiko Nishida ,  Mitsunori Nakatani ,  Hiroaki Morikawa ,  Shoichi Karakida

IPC分类号： H01L31/04 ,  H01L31/02 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/0504 ,  Y02E10/50

摘要： A solar cell includes a photoelectric conversion layer, a first electrode on one surface of the photoelectric conversion layer, a second electrode on other surface of the photoelectric conversion layer, and a third electrode on the other surface of the photoelectric conversion layer. The third electrode is substantially rectangular with its corners rounded off in the in-plane direction of the photoelectric conversion layer, and overlaps the second electrode at the periphery thereof.

摘要翻译： 太阳能电池包括光电转换层，光电转换层的一个表面上的第一电极，光电转换层的另一表面上的第二电极和光电转换层的另一个表面上的第三电极。 第三电极基本上是矩形的，其角部在光电转换层的面内方向上倒圆，并且在其周边与第二电极重叠。

公开(公告)号：US5496408A

公开(公告)日：1996-03-05

申请号：US131529

申请日：1993-10-04

申请人： Takashi Motoda ,  Shoichi Karakida ,  Nobuaki Kaneno ,  Shigeki Kageyama

发明人： Takashi Motoda ,  Shoichi Karakida ,  Nobuaki Kaneno ,  Shigeki Kageyama

IPC分类号： C30B35/00 ,  C23C16/448 ,  C30B25/14 ,  H01L21/205 ,  H01L21/365 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4485 ,  C30B25/14 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： An apparatus for producing a compound semiconductor layer includes a first flow rate controller for adjusting flow rates of respective material source gases, a gas mixing pipe for mixing the respective material source gases, gas distributing pipes for distributing gases and connected to the gas mixing pipe, a second flow rate controller for adjusting flow rates of the material source gases flowing through the gas distributing pipes and for supplying the material source gases to a reaction tube, a pressure detector for detecting pressure in the gas mixing pipe, and a third controller responsive to the pressure detector for controlling the second flow rate controller to maintain a constant pressure in the gas mixing pipe. Retardation of the gases between the first and second flow rate controllers is avoided, improving thickness uniformity in grown layers.

摘要翻译： 一种化合物半导体层的制造装置，具备调整各个原料气体的流量的第一流量控制装置，混合各原料气体的气体混合管，分配气体的气体分配管，与气体混合管连接， 第二流量控制器，用于调节流过气体分配管的材料源气体的流量和用于将材料源气体供应到反应管的流量;用于检测气体混合管中的压力的​​压力检测器，以及响应于 用于控制第二流量控制器以保持气体混合管中的恒定压力的压力检测器。 避免了第一和第二流速控制器之间的气体的延迟，从而改善了生长层中的厚度均匀性。