摘要:
A sample hold circuit is provided for use in a time-interleaved A/D converter apparatus including a plurality of low-speed pipeline A/D converters which are parallelized. The sample hold circuit includes a sampling capacitor and a sample hold amplifier, and operates to sample and hold an input signal by using a switched capacitor. An adder circuit of the sample hold circuit adds a ramp calibration signal to the input signal, by inputting the ramp calibration signal generated to have a frequency identical to that of a sampling clock signal and a predetermined slope based on the sampling clock signal, into a sample hold amplifier via a calibration capacitor having a capacitance smaller than that of the sampling capacitor.
摘要:
A telescopic differential operational amplifier circuit for use in a pipelined A/D converter is provided with two auxiliary differential amplifiers connected to two cascode circuits, each including cascode-connected first to fourth transistors. During the sampling phase, first and second switches are turned on to apply a predetermined bias voltage to the gates of first and fourth transistors, and the input terminal of the differential operational amplifier circuit is set to a common mode voltage. During the hold phase, the first and second switches are turned off so that a voltage of each of the gates of the first and fourth transistors change to follow an input signal inputted via the input terminal with coupling capacitors operating as a level shifter of the input signal. Then the differential operational amplifier circuit performs push-pull operation operative only in a transconductance drive region, and is prevented from operating in a slewing region.
摘要:
In a pipeline type A/D converter apparatus including A/D converter circuit parts connected in cascade with each other and A/D converting a sample hold signal in a pipeline form, each A/D converter circuit part includes a pre-A/D converter circuit for A/D converting an input signal into a digital signal, and a multiplying D/A converter circuit for D/A converting the digital signal into an analog control signal, and D/A converting the input signal by sampling, holding and amplifying the input signal using a sampling capacitor based on the analog control signal. A precharge circuit precharges a sampling capacitor before sampling so as to attain a predetermined output value in accordance with a digital input to output characteristic substantially adapted to an input to output characteristic of each A/D converter circuit part that presents an output signal corresponding to the input signal to each A/D converter circuit part.
摘要:
In a pipeline type A/D converter apparatus including A/D converter circuit parts connected in cascade with each other and A/D converting a sample hold signal in a pipeline form, each A/D converter circuit part includes a pre-A/D converter circuit for A/D converting an input signal into a digital signal, and a multiplying D/A converter circuit for D/A converting the digital signal into an analog control signal, and D/A converting the input signal by sampling, holding and amplifying the input signal using a sampling capacitor based on the analog control signal. A precharge circuit precharges a sampling capacitor before sampling so as to attain a predetermined output value in accordance with a digital input to output characteristic substantially adapted to an input to output characteristic of each A/D converter circuit part that presents an output signal corresponding to the input signal to each A/D converter circuit part.
摘要:
A pipelined A/D converter circuit includes a sample hold circuit configured to sample and hold an analog input signal, and output a sample hold signal, and an A/D converter circuit including A/D converter circuit parts connected to each other in cascade, and performs A/D conversion in a pipelined form. The pipelined A/D converter circuit part of each stage includes a sub-A/D converter circuit, a multiplier D/A converter circuit, and a precharge circuit. The sub-A/D converter circuit includes comparators, and A/D convert the input signal into a digital signal of predetermined bits, a multiplier D/A converter circuit for D/A converting the digital signal from the sub-A/D converter circuit into an analog control signal generated with a reference voltage served as a reference value, sample, hold and amplify the input signal by sampling capacitors based on the analog control signal.
摘要:
Charge generated in a photodiode is properly split for difference processing. An imaging element is constituted by a semiconductor such that a charge accumulation portion is connected to a light receiving portion using a buried photodiode and charge is split from the charge accumulation portion by a plurality of gates and is accumulated. An imaging device includes a control device performing control so as to accumulate charge that is generated by a photoelectric conversion at an exposure cycle synchronous with the light emission of a light source. The exposure cycle includes a first period for receiving reflection light from a subject illuminated by light from the light source and a second period for receiving light from the subject illuminated by an environmental light not including the light from the light source. The imaging device includes a charge accumulation region connected to each photoelectric conversion region, a first charge storage region for receiving charge generated in the photoelectric conversion regions during the first period via the charge accumulation portion, and a second charge storage region for receiving charge generated in the photoelectric conversion regions during the second period via the charge accumulation portion.
摘要:
A optical-information acquisition element encompasses a semiconductor layer (31) of a p-type, a surface-buried region (33) of a n-type buried in the semiconductor layer (31) so as to implement a photodiode with the semiconductor layer (31), a charge-accumulation region (36) of the n-type buried in the surface-buried region (33), configured to accumulate charges generated by the photodiode, a barrier-creating region of the p-type buried in the surface-buried region (33) so as to sandwich the surface-buried region (33) with the semiconductor layer (31), configured to create a potential barrier, and a charge-exhaust region (34) of the n-type buried in the semiconductor layer (31), configured to store and to extract excess charges which surmount the potential barrier and flow out from the charge-accumulation region (36). The changes of potential level of the charge-accumulation region (36) are extracted as signals, after receiving optical-communication signals. An optical-information-acquisition element array and a hybrid solid-state imaging device are also provided.
摘要:
A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.
摘要翻译:包括像素信号控制器的固态成像装置的前置放大器(列区域单元)。 像素信号控制器对于每个垂直信号线,由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平,并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段,提供了模数(A / D)转换器和信号延伸单元。 A / D转换器对像素信号进行数字化,参照来自像素信号检测器的分类信号,通过设置到像素信号放大器的增益来校正数字化像素信号,使得一个屏幕的信号的动态范围 延长了
摘要:
A semiconductor element includes: a p-type semiconductor region; an n-type light-receiving surface buried region buried in the semiconductor region; an n-type charge accumulation region buried in the semiconductor region, continuously to the light-receiving surface buried region, establishing a deeper potential well depth than the light-receiving surface buried region; a charge read-out region configured to read out the charges accumulated in the charge accumulation region; an exhaust-drain region buried in the semiconductor region, configured to extract the charges from the light-receiving surface buried region; a first potential controller configured to extract the charges from the light-receiving surface buried region to the exhaust-drain region; and a second potential controller configured to transfer the charges from the charge accumulation region to the charge read-out region.
摘要:
A distance image sensor capable of enlarging the distance measurement range without reducing the distance resolution is provided. A radiation source 13 provides first to fifth pulse trains PT1 to PT5 which are irradiated to the object as radiation pulses in the first to fifth frames arranged in order on a time axis. In each of the frames, imaging times TPU1 to TPU5 are prescribed at points of predetermined time ΔTPD from the start point of each frame, also the pulses PT1 to PT5 are shifted respectively by shift amounts different from each other from the start point of the first to fifth frames. A pixel array 23 generates element image signals SE1 to SE5 each of which has distance information of an object in distance ranges different from each other using imaging windows A and B in each of five frames. A processing unit 17 generates an image signal SIMAGE by combining the element image signals. Since five times-of-flight measurement are used, the width of the radiation pulse does not have to be increased to obtain distance information of the object in a wide distance range, and the distance resolution is not reduced.