公开(公告)号：US5362559A

公开(公告)日：1994-11-08

申请号：US89634

申请日：1993-07-12

申请人： Shuji Hayase ,  Yoshihiko Nakano ,  Yukihiro Mikogami ,  Akira Yoshizumi ,  Shinji Murai ,  Rikako Kani

发明人： Shuji Hayase ,  Yoshihiko Nakano ,  Yukihiro Mikogami ,  Akira Yoshizumi ,  Shinji Murai ,  Rikako Kani

IPC分类号： B05D1/20 ,  C09D183/16 ,  B32B5/00

CPC分类号： B82Y30/00 ,  B05D1/202 ,  B82Y40/00 ,  C09D183/16 ,  Y10T428/261

摘要： Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique. In the films, the molecules of the polysilane having the repeating unit (1), that is, the Si-Si backbones are oriented in a fixed direction.

摘要翻译： 公开了一种聚硅烷单分子膜和聚硅烷叠层膜，其通过构建多个所述单分子膜而形成，所述单分子膜由具有由以下给出的通式（1）表示的重复单元的聚硅烷组成：＆lt; IMAGE＆gt;（1 ）其中，R1表示取代或未取代的碳原子数1〜24的烷基或碳原子数6〜24的取代或未取代的芳基，R2表示可被取代的碳原子数1〜4的二价烃基，X 表示羟基，氨基，羧基或具有选自羟基，氨基，羧基，酰胺键，酯键，氨基甲酸酯键和碳酸酯键中的至少一种的亲水基团。 可以通过LB技术在基板上形成聚硅烷单分子膜和积层膜。 在膜中，具有重复单元（1）的聚硅烷的分子，即Si-Si主链在固定方向上取向。

公开(公告)号：US6004730A

公开(公告)日：1999-12-21

申请号：US921613

申请日：1997-09-02

申请人： Satoshi Mikoshiba ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase

发明人： Satoshi Mikoshiba ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase

IPC分类号： C08G77/48 ,  C08G77/62 ,  C08L83/04 ,  C08L83/16 ,  G03F7/075 ,  H01L21/027 ,  H01L21/312 ,  G03F7/26

CPC分类号： G03F7/0757

摘要： There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.

摘要翻译： 提出了一种形成绝缘膜图案的方法，其能够通过碱性溶液的碱显影容易地获得高精度和低介电常数的绝缘图案。 该方法包括以下步骤：将包含具有特定单体的第一硅氧烷聚合物和具有特定单体的第二硅氧烷聚合物的光敏组合物涂布在基材上，从而形成感光组合物的膜，选择性地曝光感光组合物的膜， 将曝光的膜显影以形成图案，并对感光性组合物膜的图案进行热处理。

公开(公告)号：US6025117A

公开(公告)日：2000-02-15

申请号：US986517

申请日：1997-12-08

申请人： Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasuhiko Sato ,  Seiro Miyoshi ,  Toru Ushirogouchi ,  Sawako Yoshikawa ,  Hideto Matsuyama ,  Yasunobu Onishi ,  Masaki Narita ,  Toshiro Hiraoka

发明人： Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasuhiko Sato ,  Seiro Miyoshi ,  Toru Ushirogouchi ,  Sawako Yoshikawa ,  Hideto Matsuyama ,  Yasunobu Onishi ,  Masaki Narita ,  Toshiro Hiraoka

IPC分类号： C08G77/60 ,  C08G83/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/00

CPC分类号： C08G83/003 ,  C08G77/60 ,  G03F7/0754 ,  G03F7/091

摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.

摘要翻译： 具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。 聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。 在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。 聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。

公开(公告)号：US5994007A

公开(公告)日：1999-11-30

申请号：US213373

申请日：1998-12-17

申请人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

发明人： Yasuhiko Sato ,  Atsushi Ando ,  Yasunobu Onishi ,  Yoshihiko Nakano ,  Shuji Hayase ,  Rikako Kani

IPC分类号： G03F7/09 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/203 ,  G03F7/091 ,  G03F7/093 ,  Y10S430/143

摘要： Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.

摘要翻译： 公开了一种图案形成方法，包括以下步骤：提供抗蚀剂膜，对抗蚀剂膜施加曝光，直接在抗蚀剂膜上方的膜上，并且将抗蚀剂膜正下方的另一个膜制成绝缘体，施加带电的束曝光 将抗蚀膜直接在抗蚀剂膜上方的膜和抗蚀剂膜正下方的另一个膜导电到抗蚀剂膜上，并且使抗蚀剂膜显影以形成抗蚀剂图案。

公开(公告)号：US5985513A

公开(公告)日：1999-11-16

申请号：US865067

申请日：1997-05-29

申请人： Rikako Kani ,  Yoshihiko Nakano ,  Shuji Hayase

发明人： Rikako Kani ,  Yoshihiko Nakano ,  Shuji Hayase

IPC分类号： C08K5/14 ,  G03F7/075 ,  G03C1/73

CPC分类号： G03F7/0757 ,  C08K5/14 ,  G03F7/0754

摘要： The present invention relates to a photosensitive composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a benzophenone type compound having an organic peroxide, ##STR1## wherein Ar represents a substituted or unsubstituted aryl group.

摘要翻译： 本发明涉及一种光敏组合物，其包含具有由以下通式（1）表示的重复单元的聚硅烷和具有有机过氧化物的二苯甲酮型化合物，其中Ar表示取代或未取代的芳基。

公开(公告)号：US06270948B1

公开(公告)日：2001-08-07

申请号：US09327223

申请日：1999-06-07

申请人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

发明人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3121

摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

公开(公告)号：US5702776A

公开(公告)日：1997-12-30

申请号：US612580

申请日：1996-03-08

申请人： Shuzi Hayase ,  Yoshihiko Nakano ,  Rikako Kani

发明人： Shuzi Hayase ,  Yoshihiko Nakano ,  Rikako Kani

IPC分类号： C08G77/60 ,  C08L83/05 ,  C08L83/07 ,  G02B5/20 ,  G02F1/1335 ,  G03F7/075 ,  G03F7/26 ,  G09F9/00 ,  G03F9/00

CPC分类号： G03F7/265 ,  C08G77/60 ,  G02B5/201 ,  G03F7/0754 ,  Y10T428/1045

摘要： A method of manufacturing a colored material wherein ultraviolet rays are irradiated onto an organic silicon compound film having any one of repeating units represented by the following general formulas (1) to (3), and then the film is heat-dried to turn the film into a three-dimensional structure. This process is repeated for each of R, G and B. As a result, a color filter provided with a color layer comprising a three-dimensional structure composed of silicon atom having one Si--C bond and formed through Si--O--Si bonds, and having a plurality of regions containing three different colors of R, G and B are contained therein can be manufactured. ##STR1## wherein R.sup.1 is a substituted or non-substituted hydrocarbon group, R.sup.2 is a substituted or non-substituted hydrocarbon group or acyl group, and R.sup.3 is a substituted or non-substituted silyl group or polysilane skeleton.

摘要翻译： 一种制造有色材料的方法，其中将紫外线照射到具有由以下通式（1）至（3）表示的重复单元中的任何一种的有机硅化合物膜上，然后将该膜热干燥以使该膜 成三维结构。 对于R，G和B中的每一个重复该过程。结果，提供了一种滤色器，其具有包括由具有一个Si-C键的硅原子构成的三维结构并通过Si-O-Si键形成的彩色层 ，并且包含含有三种不同颜色的R，G和B的多个区域可以被制造.R 1是取代或未取代的烃基，R 2是取代或未取代的烃基或酰基， R3为取代或未取代的甲硅烷基或聚硅烷骨架。

公开(公告)号：US5962581A

公开(公告)日：1999-10-05

申请号：US638698

申请日：1996-04-26

申请人： Shuzi Hayase ,  Yoshihiko Nakano ,  Rikako Kani ,  Mao Ito ,  Satoshi Mikoshiba ,  Takeshi Okino ,  Sawako Fujioka

发明人： Shuzi Hayase ,  Yoshihiko Nakano ,  Rikako Kani ,  Mao Ito ,  Satoshi Mikoshiba ,  Takeshi Okino ,  Sawako Fujioka

IPC分类号： C08K3/36 ,  C08K5/00 ,  C08K3/34

CPC分类号： C08K3/36 ,  C08K5/0008 ,  Y10S430/121

摘要： A method of forming a pattern comprising the steps of forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate, irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate, and removing the predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution. ##STR1## wherein Ar is a substituted or non-substituted aryl group.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基材上形成包含具有由以下通式（1）表示的重复单元的聚硅烷的有机硅烷化合物的膜，将光化辐射照射到所述膜的预定部分上 在基板上形成的有机硅烷化合物，并且通过用碱性显影液溶解来除去由光化辐射照射的膜的预定部分。 其中Ar是取代或未取代的芳基。