摘要:
A resonant tunnelling barrier (RTB) structure device (e.g., diode), having a large peak-to-valley current density (Jp/Jv) ratio, includes an InP substrate and a RTB structure structure. The RTB structure is formed by a first doped layer of InP or In.sub.0.53 GA.sub.0.47 As, a first barrier layer of Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0.ltoreq.x.ltoreq.1, y=0.51+0.05x), a well layer of InP or In.sub.z Ga.sub.1-z As (0.52.ltoreq.z.ltoreq.0.54), a second barrier layer of the AlGaAsSb, and a second doped layer of InP or In.sub.z Ga.sub.1-z As. The layers of the RTB structure are lattice-matched to InP.
摘要:
An optical semiconductor device comprises a first material layer having a first thickness and formed of a first semiconductor material having a first band gap; a first quantum level pair formed in the first material layer in correspondence to the first thickness with a first energy gap that corresponds to an energy of the incident optical beam to be modulated; a pair of second material layers each having a second, smaller thickness chosen to cause the tunneling of carriers through the second material layer, the second material layer being formed of a second, different semiconductor material having a second, larger band gap and provided at both sides of the first material layer; a third material layer having a third thickness larger than said first thickness and provided at least above or below the second material layer; a second quantum level pair formed in the third material layer in correspondence to the third thickness with a second energy gap that is smaller than the first energy gap; and a carrier annihilating part for annihilating the carriers from the second quantum level pair by inducing a stimulated emission of light having an energy identical with the second energy gap.
摘要:
A light switching apparatus includes an optically non-linear etalon, a first optical part for applying a signal light of a linear polarization to the optically non-linear etalon, and a second optical part for applying a control light of a circular polarization or elliptical polarization to the optically non-linear etalon. The control light varies a refractive index of an optically non-linear substance of the optically non-linear etalon to thereby perform a switching operation on the signal light.
摘要:
A non-linear semiconductor optical device comprises a first quantum well layer having discrete quantum levels of carriers including a first quantum level for electrons and a second quantum level for holes with an energy gap corresponding to a wavelength of an incident optical beam; a pair of barrier layers provided above and below the first quantum well layer in contact therewith with a thickness that allows a tunneling of the carriers therethrough for defining a potential well in correspondence to the first quantum well layer; and a second quantum well layer provided in contact with the barrier layers for accepting the carriers that have been created in the first quantum well layer upon excitation by the incident optical beam and escaped therefrom by tunneling through the barrier layer. The second quantum well layer comprises a material that has a conduction band including therein a .GAMMA. valley and an X valley, wherein said .GAMMA. valley is located at an energy level substantially higher than the first quantum level while said X valley is located at an energy level substantially lower than the first quantum level.
摘要:
An electromechanical transducer element includes a first electrode on a substrate, an electromechanical transducer film on the first electrode, and a second electrode on the electromechanical transducer film. The electromechanical transducer film includes a thin line pattern. The thin line pattern includes a plurality of thin lines that are spaced away from each other.
摘要:
An electromechanical transducer element includes a first electrode; an electromechanical transducer film stacked on one surface of the first electrode; a second electrode stacked on the electromechanical transducer film; and wiring formed on the second electrode. In an at least one cross section, each of a boundary, on a second electrode side, of the electromechanical transducer film and a boundary, on a side opposite to the electromechanical transducer film, of the second electrode is a curved shape protruding away from the first electrode. In the at least one cross section, each of a film thickness of the electromechanical transducer film and a film thickness of the second electrode becomes thinner toward end portions from a maximum height portion.
摘要:
Disclosed is a method of fabricating an electromechanical transducer film. The method includes treating a surface of a first electrode to be liquid-repellent, the first electrode being formed on one surface of a substrate, irradiating the surface of the first liquid-repellent electrode with an energy ray while moving an irradiation position in accordance with a shape of the electromechanical transducer film to be formed and a shape of an alignment mark to be formed, and forming the alignment mark by applying an application liquid to an area including a portion irradiated with the energy ray in accordance with the shape of the alignment mark in the irradiating step, the application liquid being applied by an inkjet method.
摘要:
Disclosed is a method of manufacturing an electromechanical transducer layer on a surface of a substrate, including discharging a solution including a source material to form the electromechanical transducer layer from a nozzle of a nozzle plate to coat the solution on the surface of the substrate while applying voltage between the nozzle plate and the substrate to charge the nozzle plate at a first polarity and the substrate at a second polarity opposite to the first polarity such that a split droplet split from a main droplet which is coated on the surface of the substrate becomes charged at the second polarity and is attracted and collected by the nozzle plate; and applying a heat treatment to the substrate on which the solution is coated to crystallize the solution to form the electromechanical transducer layer.
摘要:
A coupled analysis simulation apparatus includes a coupled analysis processing unit configured to perform coupled analysis by performing electromagnetic field analysis and circuit analysis in coordination with each other, the electromagnetic field analysis being performed on a space including conductive layers to which an electronic circuit module is connected, the circuit analysis being performed on the electronic circuit module; a first generating unit configured to generate a virtual conductive part in a section or a region including connection parts connecting the electronic circuit module with the conductive layers; and a second generating unit configured to generate virtual connection parts that virtually connect the virtual conductive part with the conductive layers at positions where the connection parts are connected to the conductive layers.
摘要:
A motion control device for a vehicle includes a vehicle speed obtaining device, a curvature obtaining device for obtaining a bending grade of a curve existing ahead of the vehicle, a position obtaining device for obtaining a relative position between the vehicle and the curve, a determination device for determining an appropriate vehicle speed for the vehicle passing through the curve based on the bending grade, a speed reduction control device for executing a speed reduction control for reducing the vehicle speed based on the vehicle speed and the relative position so that the vehicle passes through the curve at the appropriate vehicle speed, and a gradient obtaining device for obtain a gradient of the road on the curve existing in a traveling direction of the vehicle, wherein the determination device determines the appropriate vehicle speed based on the gradient of the road in addition to the bending grade.