公开(公告)号：US08513072B2

公开(公告)日：2013-08-20

申请号：US12968656

申请日：2010-12-15

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Ikuko Kawamata

IPC分类号： H01L21/336

CPC分类号： H01L27/11546 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/1255 ,  H01L29/66825 ,  H01L29/7881

摘要： In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.

摘要翻译： 为了在绝缘表面上形成多个半导体元件，在一个连续半导体层中，用作半导体元件的元件区域和具有通过重复PN结将元件区域彼此电隔离的功能的元件隔离区域。 通过选择性地添加至少一种或多种氧，氮和碳的杂质元素和赋予与相邻元件区相反的导电类型的杂质元素来形成元件隔离区域，以便电隔离元件 在一个连续的半导体层中彼此相交。

公开(公告)号：US08445905B2

公开(公告)日：2013-05-21

申请号：US13567451

申请日：2012-08-06

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

IPC分类号： H01L29/10

CPC分类号： H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。

公开(公告)号：US07768009B2

公开(公告)日：2010-08-03

申请号：US12196798

申请日：2008-08-22

申请人： Satoshi Kobayashi ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

发明人： Satoshi Kobayashi ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L27/12

CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.

摘要翻译： 一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。 在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区 在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

公开(公告)号：US20060046336A1

公开(公告)日：2006-03-02

申请号：US11205220

申请日：2005-08-17

申请人： Hironobu Shoji ,  Shinji Maekawa ,  Kensuke Yoshizumi ,  Tatsuya Honda ,  Yukie Suzuki ,  Ikuko Kawamata ,  Shunpei Yamazaki

发明人： Hironobu Shoji ,  Shinji Maekawa ,  Kensuke Yoshizumi ,  Tatsuya Honda ,  Yukie Suzuki ,  Ikuko Kawamata ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  H01L27/1277 ,  H01L27/1292 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/0005 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323 ,  Y02P80/30

摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.

摘要翻译： 本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。 在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。 在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。 此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。

公开(公告)号：US08520178B2

公开(公告)日：2013-08-27

申请号：US12844072

申请日：2010-07-27

申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

IPC分类号： G02F1/1343 ,  B05D5/00 ,  B05D1/32 ,  B05D7/22

CPC分类号： H01L21/76801 ,  H01L21/288 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L2924/0002 ,  H01L2924/00

摘要： When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.

摘要翻译： 当形成导电层时，将含有导电材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分）和第一导电层（ 绝缘层）形成。 涂布含有导电材料的第二液体组合物，以填充具有框架形状的第一导电层内的空间，由此形成第二导电层。 第一导电层和第二导电层形成为彼此接触，并且第一导电层形成为围绕第二导电层。 因此，第一导电层和第二导电层可以用作一个连续导电层。

公开(公告)号：US08242496B2

公开(公告)日：2012-08-14

申请号：US12835117

申请日：2010-07-13

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

IPC分类号： H01L29/786

CPC分类号： H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。

公开(公告)号：US20120129288A1

公开(公告)日：2012-05-24

申请号：US13361998

申请日：2012-01-31

申请人： Satoshi KOBAYASHI ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

发明人： Satoshi KOBAYASHI ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.

摘要翻译： 一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。 在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区 在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

公开(公告)号：US08183067B2

公开(公告)日：2012-05-22

申请号：US11881233

申请日：2007-07-26

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hironobu Shoji ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hironobu Shoji ,  Ikuko Kawamata

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/41733

摘要： A display device which can be manufactured with improved material use efficiency and through a simplified manufacturing process, and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light to remove an irradiated region of the insulating layer so that a first opening is formed in the insulating layer, and the light-absorbing layer is selectively removed by using the insulating layer having the first opening as a mask so that a second opening is formed in the insulating layer and the light-absorbing layer. A conductive film is formed in the second opening to be in contact with the light-absorbing layer, thereby electrically connecting to the light-absorbing layer with the insulating layer interposed therebetween.

摘要翻译： 可以制造具有改善的材料使用效率并且通过简化制造工艺的显示装置及其制造技术。 形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，以除去绝缘层的照射区域，使得第一开口为 并且通过使用具有第一开口的绝缘层作为掩模来选择性地去除光吸收层，使得在绝缘层和光吸收层中形成第二开口。 在第二开口中形成与光吸收层接触的导电膜，从而与隔着绝缘层的光吸收层电连接。

公开(公告)号：US20100237774A1

公开(公告)日：2010-09-23

申请号：US12722791

申请日：2010-03-12

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Noriko Shibata ,  Yukie Suzuki ,  Yasuo Nakamura ,  Ikuko Kawamata ,  Yoshitaka Moriya

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Noriko Shibata ,  Yukie Suzuki ,  Yasuo Nakamura ,  Ikuko Kawamata ,  Yoshitaka Moriya

IPC分类号： H05B33/06

CPC分类号： H01L51/5012 ,  F21K9/20 ,  F21K9/23 ,  F21S8/03 ,  F21S8/04 ,  F21S41/155 ,  F21V21/002 ,  F21Y2105/00 ,  F21Y2115/20 ,  H01L33/02 ,  H01L33/62 ,  H01L51/5064 ,  H05B33/22 ,  H05B33/28

摘要： To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.

摘要翻译： 为了减轻使用电致发光材料的照明装置的厚度，并且简化了使用电致发光材料的照明装置的结构，在本发明的照明装置中：将包括在照明装置中的发光元件电连接的端子 器件到外部形成在与发光元件相同的表面上; 并且端子形成在基板的中心，同时发光元件堆叠。 另外，照明装置具有发光元件不易劣化的结构。

公开(公告)号：US07564058B2

公开(公告)日：2009-07-21

申请号：US11187988

申请日：2005-07-25

申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

IPC分类号： H01L27/14

CPC分类号： H01L21/02667 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/124 ,  H01L27/1277 ,  H01L27/1292 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/56

摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.

摘要翻译： 提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法，其中以高效率使用材料并且需要少量的光掩模。 本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层，形成在栅极电极层上的栅极绝缘层，形成在栅极绝缘层上的结晶半导体层，具有一个导电性的半导体层 形成为与结晶半导体层接触的类型，源电极层和漏极电极层，形成为与具有一种导电类型的半导体层接触，在源极电极层，漏极电极层和像素电极之后形成绝缘体 在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层，形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层， 开口和第二开口以电连接源极电极层或漏极电极 呃到像素电极层。