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    Thin film transistor
    6.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08168973B2

    公开(公告)日：2012-05-01

    申请号：US12467005

    申请日：2009-05-15

    申请人： Shunpei Yamazaki ,  Koji Dairiki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Takuya Hirohashi

    发明人： Shunpei Yamazaki ,  Koji Dairiki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Takuya Hirohashi

    IPC分类号： H01L29/786

    CPC分类号： H01L29/78696 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

    摘要： The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over the amorphous semiconductor layer. The amorphous semiconductor layer comprises an NH radical. Defects of the amorphous semiconductor layer are reduced by cross-linking dangling bonds with the NH radical in the amorphous semiconductor layer.

    摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅极绝缘层，栅极绝缘层上的非晶半导体层，包括在非晶半导体层上赋予一种导电类型的杂质元素的半导体层。 非晶半导体层包含NH自由基。 通过与非晶半导体层中的NH自由基交联悬挂键来减少非晶半导体层的缺陷。

    Thin film transistor
    7.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08637866B2

    公开(公告)日：2014-01-28

    申请号：US12490447

    申请日：2009-06-24

    申请人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    发明人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    IPC分类号： H01L29/72

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

    摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

    摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

    Method for manufacturing semiconductor device using a laser annealing process
    8.
    发明授权
    Method for manufacturing semiconductor device using a laser annealing process 有权
    使用激光退火工艺制造半导体器件的方法

    公开(公告)号：US08329520B2

    公开(公告)日：2012-12-11

    申请号：US12750739

    申请日：2010-03-31

    申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi

    发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1251 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L27/1281

    摘要： An island-shaped single crystal semiconductor layer whose top surface has a plane within ±10° from a {211} plane is formed on an insulating surface; a non-single-crystal semiconductor layer is formed in contact with the top surface and a side surface of the single crystal semiconductor layer and on the insulating surface; the non-single-crystal semiconductor layer is irradiated with laser light to melt the non-single-crystal semiconductor layer, and to crystallize the non-single-crystal semiconductor layer formed on the insulating surface with use of the single crystal semiconductor layer as a seed crystal, so that a crystalline semiconductor layer is formed. A semiconductor device having an n-channel transistor and a p-channel transistor formed with use of the crystalline semiconductor layer is provided.

    摘要翻译： 在绝缘面上形成顶面与{211}面成±10°以内的岛状单晶半导体层， 形成与单晶半导体层的顶表面和侧表面以及绝缘表面接触的非单晶半导体层; 用激光照射非单晶半导体层以熔化非单晶半导体层，并且使用单晶半导体层将形成在绝缘表面上的非单晶半导体层结晶为 晶种，从而形成结晶半导体层。 提供了具有使用晶体半导体层形成的n沟道晶体管和p沟道晶体管的半导体器件。

    Thin film transistor
    10.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08124972B2

    公开(公告)日：2012-02-28

    申请号：US12429486

    申请日：2009-04-24

    申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Shunpei Yamazaki ,  Takeyoshi Watabe

    发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Shunpei Yamazaki ,  Takeyoshi Watabe

    IPC分类号： H01L29/786

    CPC分类号： H01L27/127 ,  H01J37/32091 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

    摘要： The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer.

    摘要翻译： 薄膜晶体管包括覆盖栅电极的栅极绝缘层，在具有绝缘表面的基板上; 形成在非晶结构中包含多个晶体区域的沟道形成区域的半导体层; 赋予形成源极区域和漏极区域的一种导电型的杂质半导体层; 以及由位于半导体层和杂质半导体层之间的非晶半导体形成的缓冲层。 薄膜晶体管包括晶体区域，其包括微小晶粒和倒锥形或倒棱锥晶粒，其每一个从远离栅极绝缘层和半导体层之间的界面的位置朝向半导体层的方向大致径向地生长 沉积在不到达杂质半导体层的区域中。