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    Method for activating zinc in semiconductor devices
    1.
    发明授权
    Method for activating zinc in semiconductor devices 失效
    在半导体器件中激活锌的方法

    公开(公告)号：US5264397A

    公开(公告)日：1993-11-23

    申请号：US656908

    申请日：1991-02-15

    Applicant: Shwu L. Lin ,  John D. Kulick ,  Randall B. Wilson

    Inventor： Shwu L. Lin ,  John D. Kulick ,  Randall B. Wilson

    IPC: H01L21/208 ,  H01L21/324 ,  H01L33/00 ,  H01L33/30 ,  H01S5/30 ,  H01S5/323 ,  H01L21/20

    CPC classification number: H01L33/305 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/3245 ,  H01L33/0062 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/32391

    Abstract: A method for activating the zinc dopant in an active layer of a Group III/Group V semiconductor device comprises forming a layer of zinc doped Group III/Group IV material, and thereafter annealing the layer at a predetermined temperature and for a predetermined time sufficient to convert inactive zinc in the layer to acceptor zinc. In a preferred embodiment of the invention, a method for activating zinc dopant in the active layer of an InP-InGaAsP double heterostructure comprises annealing the active layer at a temperature of about 625.degree. C. for at least about 190 seconds which converts inactive zinc to acceptor zinc without substantially decreasing the total zinc in the active layer. In another preferred embodiment, a method for increasing the power output of InP-InGaAsP optoelectronic semiconductor device, such as a laser or an LED having a zinc doped active layer, comprises annealing the active layer of the semiconductor device at a temperature of about 625.degree. C. for at least about 190 seconds.

    Abstract translation: 用于激活III / V族半导体器件的有源层中的锌掺杂剂的方法包括形成锌掺杂的III族/第IV族材料层，然后在预定温度下将该层退火至足以使 将层中的无定形锌转化为受体锌。 在本发明的优选实施方案中，在InP-InGaAsP双异质结构的有源层中激活锌掺杂剂的方法包括在约625℃的温度下将活性层退火至少约190秒，其将非活性锌转化为 受体锌，而不会显着降低活性层中的总锌。 在另一个优选实施例中，用于增加InP-InGaAsP光电子半导体器件（例如激光器或具有锌掺杂有源层的LED）的功率输出的方法包括在约625℃的温度下退火半导体器件的有源层 C.至少约190秒。

    Buried hetero-structure laser diode
    2.
    发明授权
    Buried hetero-structure laser diode 失效
    埋入异质结激光二极管

    公开(公告)号：US4731791A

    公开(公告)日：1988-03-15

    申请号：US869002

    申请日：1986-05-30

    Applicant: Randall B. Wilson

    Inventor： Randall B. Wilson

    IPC: H01S5/227 ,  H01S3/19 ,  H01L33/00

    CPC classification number: H01S5/227 ,  H01S5/2277

    Abstract: A buried hetero-structure laser diode is disclosed. The buried hetero-structure is formed by growing a double hetero-structure on a substrate. The double hetero-structure comprises two cladding layers spaced apart by a narrow bandgap active layer. Two spaced apart channels are etched in the double hetero-structure down to the lower cladding layer to define a mesa therebetween. Current blocking layers are deposited in the channels and on the portions of the double hetero-structure located outside the channels. The liquid phase epitaxy growth conditions are such that while the blocking layers are deposited in the channels and outside the channels, the upper cladding layer portion of the mesa is being melted back. Thus, the ends of the blocking layers touching the melted back mesa are separated from the active layer portion of the mesa by a thickness substantially less than the thickness of the upper cladding layer as measured in the regions outside the channels.

    Abstract translation: 公开了一种掩埋异质结激光二极管。 通过在衬底上生长双异质结构形成掩埋异质结构。 双异质结构包括由窄带隙活性层隔开的两个覆层。 两个间隔开的通道在双异质结构中被蚀刻到下包层以在其间限定台面。 电流阻挡层沉积在通道中以及位于通道外部的双异质结构的部分上。 液相外延生长条件使得当阻挡层沉积在通道中并在通道外部时，台面的上包层部分被熔化。 因此，接触熔化的背面台面的阻挡层的端部从台面的有源层部分分离的厚度基本上小于在通道外部的区域中测量的上包层的厚度。

    Submount and connector assembly for active fiber needle
    5.
    发明授权
    Submount and connector assembly for active fiber needle 失效
    主动纤维针的底座和连接器组件

    公开(公告)号：US5467419A

    公开(公告)日：1995-11-14

    申请号：US257607

    申请日：1994-06-09

    Applicant: Robert W. Roff ,  Randall B. Wilson

    Inventor： Robert W. Roff ,  Randall B. Wilson

    IPC: G02B6/32 ,  G02B6/42

    CPC classification number: G02B6/4228 ,  G02B6/32 ,  G02B6/423 ,  G02B6/4238 ,  G02B6/4203 ,  G02B6/4224

    Abstract: A connector assembly includes an active fiber needle 1 having a passive or active optical device 6 connected to an end face 7 of a thick metallized coating 4 and a cup-shaped mount 10 for hermetically enclosing the optical device. The mount 10 hermetically encloses the optical device 6 and provides heat dissipation and electrical connections for optical device 6. The cup-shaped mount may include a ceramic tubular sleeve hermetically sealed to the metal coating 4 on the fiber needle 1 about a central bore 12A thereof. Electrical connections between the optical device 6 and devices external to the mount may preferably be provided through a spring contact 18 which is soldered to terminals on device 6 and has at least one leg 18A, 18B extending through the hermetically sealed cup-shaped housing 10. Other embodiments of electrical lead connections may be provided by wire bonds 24 between device 6 and external metallization surfaces 26A.

    Abstract translation: 连接器组件包括有源光纤针1，其具有连接到厚金属化涂层4的端面7的无源或有源光学器件6和用于密封光学器件的杯形安装件10。 安装件10密封地包围光学装置6，并为光学装置6提供散热和电气连接。杯形安装件可以包括陶瓷管状套筒，该陶瓷管状套筒围绕其中心孔12A围绕在纤维针1上的金属涂层4上 。 光学装置6和安装件外部的装置之间的电连接可以优选地通过弹簧接触件18提供，弹簧触头18被焊接到装置6上的端子上，并且具有至少一个延伸穿过密封的杯形壳体10的支脚18A，18B。 电引线连接的其它实施例可由设备6和外部金属化表面26A之间的引线接合24提供。

    Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
    6.
    发明授权
    Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices 失效
    在InP / InGaAsP BH器件的制造中消除掩模底切

    公开(公告)号：US4566171A

    公开(公告)日：1986-01-28

    申请号：US505993

    申请日：1983-06-20

    Applicant: Ronald J. Nelson ,  Randall B. Wilson

    Inventor： Ronald J. Nelson ,  Randall B. Wilson

    IPC: H01S5/00 ,  H01L21/306 ,  H01L21/308 ,  H01L21/20 ,  H01L21/302

    CPC classification number: H01L21/308 ,  H01L21/30612 ,  Y10S148/05 ,  Y10S148/072 ,  Y10S148/118 ,  Y10S438/978

    Abstract: In the fabrication of buried heterostructure InP/InGaAsP lasers, mask undercutting during the mesa etching step is alleviated by a combination of steps which includes the epitaxial growth of a large bandgap InGaAsP cap layer (1.05 eV.ltorsim.E.sub.g .ltorsim.1.24 eV) and the plasma deposition of a SiO.sub.2 etch masking layer. Alternatively, the cap layer may be a bilayer: an InGaAs layer or narrow bandgap InGaAsP (E.sub.g .ltorsim.1.05 eV), which has low contact resistance, and a thin InP protective layer which reduces undercutting and which is removed after LPE regrowth is complete. In both cases, etching at a low temperature with agitation has been found advantageous.

    Abstract translation: 在掩埋异质结InP / InGaAsP激光器的制造中，台面蚀刻步骤中的掩模底切通过包括大带隙InGaAsP覆盖层（1.05eV约等于1.24eV）的外延生长和等离子体沉积的步骤的组合来减轻 的SiO 2蚀刻掩模层。 或者，盖层可以是双层：具有低接触电阻的InGaAs层或窄带隙InGaAsP（例如约1.05eV），以及减少底切的薄InP保护层，并且在LPE再生长完成之后被去除。 在这两种情况下，已经发现在搅拌下在低温下进行蚀刻是有利的。

    Protection of semiconductor substrates during epitaxial growth processes
    8.
    发明授权
    Protection of semiconductor substrates during epitaxial growth processes 失效
    在外延生长过程中保护半导体衬底

    公开(公告)号：US4482423A

    公开(公告)日：1984-11-13

    申请号：US392065

    申请日：1982-06-25

    Applicant: Paul R. Besomi ,  Ronald J. Nelson ,  Randall B. Wilson

    Inventor： Paul R. Besomi ,  Ronald J. Nelson ,  Randall B. Wilson

    IPC: C30B19/06 ,  C30B19/12 ,  C30B25/18

    CPC classification number: C30B19/063 ,  C30B19/12 ,  C30B25/18

    Abstract: Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-In-P) localized inside a chamber which is external to the LPE boat and which surrounds substrate prior to growth, thereby preventing thermal damage to the substrate surface. Applicability of the technique to other epitaxial growth processes (e.g., VPE and MBE) is also discussed.

    Abstract translation: 通过改进的保护技术，实际上消除了在LPE生长之前含有相对挥发性元素（例如P）的复合单晶衬底（例如，InP）的热降解。 挥发性元素的分压由位于LPE船外部并在生长之前围绕基底的室内的溶液（例如Sn-In-P）提供，从而防止对基底表面的热损伤。 还讨论了该技术对其他外延生长过程（例如VPE和MBE）的适用性。

    Active fiber needle
    10.
    发明授权
    Active fiber needle 失效
    活动纤维针

    公开(公告)号：US5434940A

    公开(公告)日：1995-07-18

    申请号：US217516

    申请日：1994-03-24

    Applicant: Robert W. Roff ,  Randall B. Wilson

    Inventor： Robert W. Roff ,  Randall B. Wilson

    IPC: G02B6/32 ,  G02B6/42

    CPC classification number: G02B6/4228 ,  G02B6/32 ,  G02B6/423 ,  G02B6/4238 ,  G02B6/4203 ,  G02B6/4224

    Abstract: An optical connection for connecting an active optical device (6,52) or a passive optical device (41,63) to an optical fiber (3), having a thick metal coating (2) deposited circumferentially around the fiber. In this optical connection the device (6,52,41,63) is bonded to the polished endface of the fiber (5), with particular use being made of the thick metal surface (7) on the endface of the fiber. In another embodiment, the optical fiber (3) is etched to form various surfaces (31,32,33) for optical coupling. This etching also allows for accurate passive alignment of an etched active device (52) or a passive device (42,63) with the optical fiber.

    Abstract translation: 一种用于将有源光学器件（6,52）或无源光学器件（41,63）连接到光纤（3）的光学连接，其具有围绕光纤周向沉积的厚金属涂层（2）。 在这种光学连接中，装置（6,52,41,63）被结合到光纤（5）的抛光端面，特别是由纤维端面上的厚金属表面（7）制成。 在另一实施例中，光纤（3）被蚀刻以形成用于光耦合的各种表面（31,32,33）。 该蚀刻还允许蚀刻的有源器件（52）或无源器件（42,63）与光纤的精确无源对准。

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