摘要:
In the polishing machine 10 for pressing the polished surface 7 of the workpiece 1 against the face where there are abrasives 15 of the rotating polishing tool 11 and executing chemical mechanical polishing, the brushing device 30, the cleaner 40, the abrasive supplier 52, and the pure water supplier 60 are sequentially arranged behind the location of the head 20 for pressing the workpiece 1 against the polishing tool 11 in the rotational direction. The cleaner 40 sprays the cleaning water 47 to the face where there are abrasives 15 of the rotating polishing tool 11 and sucks and collects it by the vacuum hole 45. Fresh slurry 62 is always supplied by the slurry supplier 63 comprising the abrasive supplier 52 and the pure water supplier 60.
摘要:
A method for processing semiconductor wafers, which provides planarized surface in a well controllable manner and with high accuracy by processing a film with uneven surface, formed over a semiconductor wafer, within the area of a working surface with a diameter larger than that of said semiconductor wafer by not more than two times, and by processing the film with a polishing liquid supplied from a supply unit disposed on a vertically arranged working surface is disclosed. Additionally, high quality dressing of the working surface can be easily performed by virtue of the smaller diameter of the working surface. Furthermore, the vertical arrangement of the working surface makes possible ready compatibility with semiconductor wafers of enlarged diameters.
摘要:
A method for processing semiconductor wafers, which provides planarized surface in a well controllable manner and with high accuracy by processing a film with uneven surface, formed over a semiconductor wafer, within the area of a working surface with a diameter larger than that of said semiconductor wafer by not more than two times, and by processing the film with a polishing liquid supplied from a supply unit disposed on a vertically arranged working surface is disclosed. Additionally, high quality dressing of the working surface can be easily performed by virtue of the smaller diameter of the working surface. Furthermore, the vertical arrangement of the working surface makes possible ready compatibility with semiconductor wafers of enlarged diameters.
摘要:
The present invention relates to a polishing method using a grindstone comprising abrasive grains and a bonding resin for bonding the abrasive grains, as well as to a polishing apparatus to be used for the polishing method. By using a resin for bonding abrasive grains, it is possible to obtain a grindstone having a desired modulus of elasticity. With such a grindstone, the surface of a substrate having concave and convex portions can be rendered uniformly flat, irrespective of the size of the concave and convex portions. Further, by first polishing the substrate surface with a polishing tool of a small elastic modulus and thereafter polishing it with a polishing tool of a large elastic modulus, it is possible to obtain a polished surface of reduced damage. The method of the invention is effective in planarizing various substrate surfaces having concave and convex portions.
摘要:
The present invention relates to a polishing method using a grindstone comprising abrasive grains and a bonding resin for bonding the abrasive grains, as well as to a polishing apparatus to be used for the polishing method. By using a resin for bonding abrasive grains, it is possible to obtain a grindstone having a desired modulus of elasticity. With such a grindstone, the surface of a substrate having concave and convex portions can be rendered uniformly flat, irrespective of the size of the concave and convex portions. Further, by first polishing the substrate surface with a polishing tool of a small elastic modulus and thereafter polishing it with a polishing tool of a large elastic modulus, it is possible to obtain a polished surface of reduced damage. The method of the invention is effective in planarizing various substrate surfaces having concave and convex portions.
摘要:
A hybrid ECU executes a program including the steps of: calculating an SOC of a battery when turn-on of pre-air-conditioning is requested; prohibiting pre-air-conditioning when the SOC does not satisfy a condition that the SOC is greater than an SOC (Y %) necessary for warm-up and running; and notifying a driver of prohibition of pre-air-conditioning.
摘要:
An engine ECU (280) and an HV_ECU (320) control a throttle motor (296) such that the throttle valve opening degree (TH) does not exceed a prescribed limit (THlim) and a rate of increase (Ta/t) in the throttle valve opening degree is equal to or lower than a predetermined opening degree increase rate (Tb/t) for a predetermined time period after start-up of the engine (120) is initiated. Thus, power output from the engine is controlled so as not to increase significantly for the predetermined time period. Accordingly, while the engine starts up, a shock that can be felt by a driver can be suppressed. In addition, variation in the amount of air taken into the engine when the engine is started is also reduced, which reduces variation in the amount of pollutants in the exhaust gas emitted while the engine starts up.
摘要:
The control technique of the invention sets smaller values to an engine stop reference value and an engine start reference value in the state of use of a regular fuel, compared with values in the ordinal state. When a calculated engine power demand Pe* is less than the engine stop reference value, the control stops the operation of the engine. When the calculated engine power demand Pe* exceeds the engine start reference value, on the other hand, the control starts the operation of the engine. This arrangement facilitates the start of the engine in the state of use of the regular fuel, compared with the start in the ordinary state. A corrective revolution speed ΔN is added to a target revolution speed Ne* of the engine, in order to respond to a decrease in output power from the internal combustion engine.
摘要:
A hybrid automobile runs by transmitting a power from an engine and a power from a motor-generator MG2, and can store a part of the power from the engine and an electric power generated by a motor-generator MG1. In this hybrid automobile, a power requirement Pr* of a drive shaft is set based on an accelerator opening, and a battery charge electric power Pbi is set based on SOC, and the sum of the power requirement Pr* and the battery charge electric power Pbi are set as an engine target power Pe*. When the engine target power Pe* is less than a predetermined minimum value Plow, the engine target power Pe* is changed to the minimum value Plow. Further, in accordance with this change, the battery charge electric power Pbi is also changed, and the engine and the motor-generators MG1, MG2 are operated. Since the minimum value Plow is set to be a value such that the efficiency with respect to the output of the engine becomes optimal, it is possible to prevent the engine from being operated in a low output region where the efficiency is low.
摘要:
A glass-ceramic substrate for a magnetic head has as its predominant crystal phase a mixed crystal of lithium disilicate (Li.sub.2 O.2SiO.sub.2) and either or both of .alpha.-quartz (.alpha.-SiO.sub.2) and .alpha.-cristobalite (.alpha.-SiO.sub.2), the .alpha.-quartz has a globular grain structure each globular crystral grain being made of aggregated particles and having a grain diameter within a range from 0.1 .mu.m to 3.0 .mu.m, the .alpha.-cristobalite has a globular grain structure each globular grain having a grain diamter within a range from 0.1 .mu.m to 1.0 .mu.m, and surface roughness (Ra) of the glass-ceramic substrate after polishing is within a range from 5 .ANG. to 50 .ANG..
摘要翻译:用于磁头的玻璃陶瓷衬底具有作为其主要结晶相的是二硅酸锂(Li 2 O 2·SiO 2)和α-石英(α-SiO 2)和α-方英石(α-SiO 2)中的任一种或两者的混合晶体, α-石英具有球状晶粒结构,每个球状低温晶粒由凝集颗粒制成,粒径在0.1μm至3.0μm的范围内,α-方晶石具有球状晶粒结构,每个球状晶粒具有晶粒直径 在0.1μm〜1.0μm的范围内,研磨后的玻璃陶瓷基板的表面粗糙度(Ra)在5〜50的范围内。