公开(公告)号：US4514265A

公开(公告)日：1985-04-30

申请号：US627921

申请日：1984-07-05

Applicant: Srinivas T. Rao ,  Frank Z. Hawrylo

Inventor： Srinivas T. Rao ,  Frank Z. Hawrylo

IPC: H01L21/288 ,  H01L21/60 ,  C25D5/02

CPC classification number: H01L24/11 ,  H01L21/2885 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  Y10S204/09

Abstract: An improved process for electroplating bonding pads, such as of gold, onto semiconductor devices is disclosed. Upon electrically connecting a masked semiconductor body and a suitable anode to the negative and positive terminals respectively of a power supply and submerging the wafer and anode into a suitable electrolyte, a modulated, rather than direct, current is applied to the electrolyte. A low stress, fine grain bonding pad layer is provided and, unexpectedly, non-planarities in the semiconductor body surface having a depth of about 1-3 microns can be substantially planarized when the thickness of the layer deposited is about 6-8 microns or more.

Abstract translation: 公开了一种用于将键合焊盘（例如金）电镀到半导体器件上的改进方法。 将掩模的半导体本体和合适的阳极电连接到电源的负极和正极端子，并将晶片和阳极浸没在合适的电解液中之后，向电解质施加调制而不是直流电流。 提供了低应力的细晶粒焊盘层，并且意想不到的是，当沉积的层的厚度为约6-8微米时，半导体主体表面中具有约1-3微米深度的非平面度可以基本平坦化， 更多。

公开(公告)号：US4612211A

公开(公告)日：1986-09-16

申请号：US563627

申请日：1983-12-20

Applicant: Frank Z. Hawrylo ,  Henry V. Kowger, deceased

Inventor： Frank Z. Hawrylo ,  Henry V. Kowger, deceased

IPC: H01L21/312 ,  H01S5/028 ,  B05D5/12

CPC classification number: H01S5/028 ,  H01L21/312 ,  Y10S438/945

Abstract: An improved method of selectively depositing coatings onto bodies of semiconductor material employs as a protective mask an alkyl ester of a sulfosuccinate salt. The mask material is applied to areas which are to be kept free of the coatings. The overspray of a desired coating, onto the protective mask is deposited in a cracked, non-continuous manner, as opposed to the smooth crystalline layer being deposited over the semiconductor body. This overspray coating can be readily removed.

Abstract translation: 选择性地将涂层沉积在半导体材料本体上的改进方法使用磺基琥珀酸盐的烷基酯作为保护掩模。 掩模材料应用于要保持无涂层的区域。 与所沉积在半导体主体上的光滑晶体层相反，将所需涂层的过度喷涂在保护掩模上以破裂的非连续方式沉积。 这种过度喷涂的涂层可以容易地去除。

公开(公告)号：US4394679A

公开(公告)日：1983-07-19

申请号：US187160

申请日：1980-09-15

Applicant: Frank Z. Hawrylo

Inventor： Frank Z. Hawrylo

IPC: H01L33/64 ,  H01S5/00 ,  H01S5/022 ,  H01L23/12 ,  H01L23/36

CPC classification number: H01L33/642 ,  H01L2224/48091 ,  H01L33/647

Abstract: The invention is an improved light emitting device comprising a light emitting element mounted on a header wherein the improvement comprises a thin layer of copper overlying the surface of the header including both the base and the stud. A large increase in the yield of useable devices is obtained for a light emitting element mounted on the header which emits between about 1.0 and about 1.7 micrometers.

Abstract translation: 本发明是一种改进的发光装置，其包括安装在集管上的发光元件，其中改进包括覆盖在包括基部和螺柱的头部的表面上的薄的铜层。 对于安装在头部上的发光元件，发射约1.0至约1.7微米的可用装置的产量的大幅度增加。

公开(公告)号：US4203785A

公开(公告)日：1980-05-20

申请号：US965239

申请日：1978-11-30

Applicant: Frank Z. Hawrylo

Inventor： Frank Z. Hawrylo

IPC: H01L21/368 ,  H01L21/208

CPC classification number: H01L21/02625 ,  H01L21/02406 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/02628

Abstract: A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.

Abstract translation: 通过使用铟作为溶剂的液相外延将硫化镉或硫化镉和磷化铟的合金的单晶层外延沉积在硫化镉的衬底上。

公开(公告)号：US4832251A

公开(公告)日：1989-05-23

申请号：US560799

申请日：1983-12-13

Applicant: Frank Z. Hawrylo

Inventor： Frank Z. Hawrylo

IPC: G02B6/42 ,  H01S5/02 ,  H01S5/022

CPC classification number: G02B6/4224 ,  G02B6/4238 ,  H01S5/02272

Abstract: An improved method of mounting electroluminescent semiconductor laser devices onto heatsinks, wherein easy subsequent location of the lasing spot of the laser is provided, is disclosed. The method comprises placing a reference mark on the front of the heatsink, wetting solder to the heatsink and allowing it to harden, contacting the laser device to the hardened solder, applying current to the laser device to cause light emission, aligning the lasing spot to the reference mark and bonding the laser device to the heatsink while maintaining such alignment.

Abstract translation: 公开了一种将电致发光半导体激光器件安装在散热片上的改进方法，其中提供了激光器的激光点的容易的后续定位。 该方法包括在散热器的前面放置参考标记，将焊料润湿散热器并使其硬化，使激光装置与硬化的焊料接触，向激光装置施加电流以引起发光，将激光点对准 参考标记，并将激光装置连接到散热器，同时保持这种对准。

公开(公告)号：US4693649A

公开(公告)日：1987-09-15

申请号：US735163

申请日：1985-05-17

Applicant: Robert E. Harwood ,  Frank Z. Hawrylo

Inventor： Robert E. Harwood ,  Frank Z. Hawrylo

IPC: B23D1/26

CPC classification number: B23D1/26 ,  Y10T29/5148 ,  Y10T409/50082 ,  Y10T409/501968 ,  Y10T409/50246

Abstract: An apparatus and method for imparting a sharp, defect-free outside corner of a desired angle to a metal workpiece are disclosed. The apparatus comprises two separate cutting tools, each with a distinct cutting direction. The tools are juxtaposed such that their leading surfaces are adjacent to each other and that their respective cutting edges intersect at the desired angle. This provides that the cutting directions of each tool are opposite one another. In using the improved cutting apparatus, the workpiece is secured and the apparatus must be movable along the x, y and z axes. By cutting the first and second surfaces of the workpiece in sequence with the first and second cutting edges of the present apparatus respectively, a sharp defect-free corner of the desired angle can be imparted to the workpiece. A specific application for the present invention is in the fabrication of intricate copper products, such as heatsinks for semiconductor devices.

Abstract translation: 公开了一种用于赋予金属工件所需角度的锋利的，无缺陷的外角的装置和方法。 该装置包括两个单独的切割工具，每个具有不同的切割方向。 工具并置，使得它们的前表面彼此相邻并且它们各自的切削刃以所需的角度相交。 这规定了每个工具的切割方向彼此相反。 在使用改进的切割设备时，工件被固定，并且设备必须能够沿x，y和z轴移动。 通过分别用本装置的第一和第二切削刃依次切割工件的第一和第二表面，可以对工件赋予所需角度的无锐角的尖角。 本发明的具体应用是制造复杂的铜制品，例如用于半导体器件的散热器。

公开(公告)号：US4439399A

公开(公告)日：1984-03-27

申请号：US375642

申请日：1982-05-06

Applicant: Frank Z. Hawrylo

Inventor： Frank Z. Hawrylo

IPC: C22C30/06 ,  H01L21/368 ,  H01L29/24 ,  H01L33/00 ,  H01L33/26 ,  C22C30/00

CPC classification number: H01L33/26 ,  C22C30/06 ,  H01L21/02387 ,  H01L21/02392 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/24 ,  H01L33/002 ,  H01L33/005

Abstract: A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the formation of p-n junctions.

Abstract translation: 通过在InP衬底上的液相外延形成具有P，In，Te和Zn的组合的宽带隙半导体合金。 该合金可用于形成p-n结。

公开(公告)号：US4195308A

公开(公告)日：1980-03-25

申请号：US903117

申请日：1978-05-05

Applicant: Frank Z. Hawrylo

Inventor： Frank Z. Hawrylo

IPC: H01L21/285 ,  H01L29/45 ,  H01L23/48

CPC classification number: H01L29/452 ,  H01L21/28575 ,  Y10S148/02

Abstract: A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.

Abstract translation: 包括P型磷化铟的主体在其上具有重量为81％至86％的金（Au），11％至14％的锗（Ge）和2％至5％的锌（Zn）的合金的欧姆接触。 这种接触具有低的电阻和对磷化铟体的良好粘附性。

公开(公告)号：US4759829A

公开(公告)日：1988-07-26

申请号：US108664

申请日：1987-10-15

Applicant: Frank J. Fuccello, Sr. ,  Frank Z. Hawrylo ,  Robert E. Harwood

Inventor： Frank J. Fuccello, Sr. ,  Frank Z. Hawrylo ,  Robert E. Harwood

IPC: H01L21/48 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01L33/64 ,  C25D5/02

CPC classification number: H01L33/483 ,  H01L21/4871 ,  H01L33/40 ,  H01L33/641 ,  H01L2224/48463 ,  H01L2924/01327 ,  H01L2933/0075 ,  H01L33/62

Abstract: A device header with a multilayer coating overlying its entire surface, and a method of making said header, are disclosed. The multilayer coating comprises an electrolytic nickel layer and a gold layer in the device mounting area of the header, whereas the rest of the header is coated with electroless nickel, a first gold layer, electrolytic nickel, and a second gold layer. In the fabrication, the electroless nickel layer is deposited over the entire header followed by the first gold layer. Upon removing these layers from the device mounting area, the first gold layer remaining on the rest of the header acts as a mask for the etching of the mounting area preparatory to deposition of electrolytic nickel and the second gold layer. The header has the advantage of the excellent coverage of electroless nickel over most of its surface, but with the advantage of high purity electrolytic nickel in the device mounting area.

Abstract translation: 公开了一种具有覆盖其整个表面的多层涂层的装置头部以及制造所述头部的方法。 多层涂层在集管的装置安装区域中包括电解镍层和金层，而集管的其余部分涂覆有无电镍，第一金层，电解镍和第二金层。 在制造中，无电镀镍层沉积在整个集管上，随后是第一金层。 在从装置安装区域移除这些层时，残留在集管的其余部分上的第一金层用作用于蚀刻沉积电解镍和第二金层的安装区域的掩模。 该头具有在其大部分表面上具有优异的化学镀镍覆盖的优点，但是在装置安装区域中具有高纯度电解镍的优点。

公开(公告)号：US4609139A

公开(公告)日：1986-09-02

申请号：US610016

申请日：1984-05-14

Applicant: Frank Z. Hawrylo

Inventor： Frank Z. Hawrylo

IPC: B23K20/24 ,  B24B39/06 ,  H01L21/768 ,  B21D39/00

CPC classification number: B24B39/06 ,  B23K20/24 ,  H01L21/7684 ,  Y10T29/47

Abstract: An improved burnishing method suitable for planarizing bonding pads on fragile semiconductor devices is disclosed. The method comprises imparting scratches of predetermined depth and spacing onto a glass slide. The bonding pad surface is contacted to the scratched glass surface under a desired pressure and a relative motion is established therebetween. The motion is continued until a smooth, defect-free bonding pad surface has been provided.

Abstract translation: 公开了一种适用于在易碎半导体器件上平坦化焊盘的改进的抛光方法。 该方法包括在玻璃载片上施加预定深度和间隔的划痕。 接合焊盘表面在所需的压力下与划痕的玻璃表面接触并且在它们之间建立相对运动。 继续运动，直到提供平滑无缺陷的焊盘表面。