公开(公告)号：US20120100308A1

公开(公告)日：2012-04-26

申请号：US12911585

申请日：2010-10-25

申请人： Robert B. Milligan ,  Dong Li ,  Steven Marcus

发明人： Robert B. Milligan ,  Dong Li ,  Steven Marcus

IPC分类号： H05H1/42 ,  B05C11/00

CPC分类号： H01J37/32009 ,  C23C16/36 ,  C23C16/45542

摘要： Methods and equipment for forming ternary metal alloys are provided. In some embodiments, TaCN thin films are deposited by exposing a substrate to alternating pulses of an organometallic tantalum precursor comprising nitrogen and carbon and hydrogen plasma. The stoichiometry of the film is tuned from carbon rich to nitrogen rich by adjusting the plasma parameters, particularly the plasma power and duration. In this way, films with varied characteristics can be formed from the same precursor. For example, both n-type and p-type materials can be deposited in the same module using the same precursor.

摘要翻译： 提供了形成三元金属合金的方法和设备。 在一些实施方案中，通过将衬底暴露于包含氮和碳和氢等离子体的有机金属钽前体的交替脉冲来沉积TaCN薄膜。 通过调节等离子体参数，特别是等离子体功率和持续时间，将膜的化学计量从富碳调节到富氮。 以这种方式，可以从相同的前体形成具有不同特性的膜。 例如，可以使用相同的前体将n型和p型材料沉积在相同的模块中。

公开(公告)号：US20070026540A1

公开(公告)日：2007-02-01

申请号：US11375588

申请日：2006-03-13

申请人： Sebastian Nooten ,  Jan Maes ,  Steven Marcus ,  Glen Wilk ,  Petri Raisanen ,  Kai-Erik Elers

发明人： Sebastian Nooten ,  Jan Maes ,  Steven Marcus ,  Glen Wilk ,  Petri Raisanen ,  Kai-Erik Elers

IPC分类号： H01L21/00 ,  B05C11/00 ,  C23C16/00 ,  H01L21/31

CPC分类号： H01J37/32082 ,  C23C16/045 ,  C23C16/403 ,  C23C16/448 ,  C23C16/45519 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32935 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3162 ,  H01L29/66181

摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface

摘要翻译： 在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化 以耗尽效应模式运行。 因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。 适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。 在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在 衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

公开(公告)号：US20180018691A1

公开(公告)日：2018-01-18

申请号：US15643587

申请日：2017-07-07

申请人： Michael R. Loeb ,  Dan McCabe ,  Steven Marcus ,  Andrew Bein

发明人： Michael R. Loeb ,  Dan McCabe ,  Steven Marcus ,  Andrew Bein

IPC分类号： G06Q30/02 ,  H04W4/00

摘要： Provided are systems, devices, and methods for routing events. In one example, an application server includes a network interface to receive demographic information and a request from a mobile application executing on a mobile device, and a processor configured to identify an item that corresponds to the request, identify a web server that corresponds to the item, generate an event based on the request, and determine whether the event corresponds to the application server or the web server based on a combination of the item and the received demographic information. The processor may further process the event or control the network interface to transmit the event to the web server, based on determining whether the event corresponds to the application server or the web server.

公开(公告)号：US08383525B2

公开(公告)日：2013-02-26

申请号：US12109859

申请日：2008-04-25

申请人： Petri Raisanen ,  Steven Marcus

发明人： Petri Raisanen ,  Steven Marcus

IPC分类号： H01L21/31

CPC分类号： H01L21/31641 ,  C23C16/405 ,  C23C16/45536 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/3141

摘要： Methods of forming metal oxide thin films and related structures are provided. One embodiment of the methods includes conducting a plurality of cycles of deposition on a substrate. Each cycle includes supplying oxygen gas and an inert gas into a reaction space substantially continuously during the cycle. A metal precursor is supplied into the reaction space for a first duration. The metal precursor is a cyclopentadienyl compound of the metal. After the metal precursor is supplied, the continuously flowing oxygen gas is activated for a second duration to generate a plasma in the reaction space. The cycle is conducted at a temperature below about 400° C. The methods can be performed after forming a structure on the substrate, wherein the structure is formed of a material which is physically and/or chemically unstable at a high temperature.

摘要翻译： 提供了形成金属氧化物薄膜和相关结构的方法。 所述方法的一个实施例包括在衬底上进行多个沉积循环。 每个循环包括在循环中基本连续地将氧气和惰性气体供入反应空间。 将金属前体供应到反应空间中持续一段时间。 金属前体是金属的环戊二烯基化合物。 在提供金属前体之后，连续流动的氧气在第二持续时间内被激活以在反应空间中产生等离子体。 该循环在低于约400℃的温度下进行。该方法可以在形成基底上的结构之后进行，其中该结构由在高温下物理和/或化学不稳定的材料形成。

公开(公告)号：US08268409B2

公开(公告)日：2012-09-18

申请号：US11873250

申请日：2007-10-16

申请人： Kai-Erik Elers ,  Glen Wilk ,  Steven Marcus

发明人： Kai-Erik Elers ,  Glen Wilk ,  Steven Marcus

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/32 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/515

摘要： Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.

摘要翻译： 提供了形成金属碳化物膜的方法。 在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物的气相脉冲和一种或多种等离子体激发的物质 含碳化合物。 在其他实施例中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括使反应空间中的底物与金属化合物和一种或多种等离子体激发的含碳化合物同时接触。 将底物进一步暴露于还原剂。 还原剂除去杂质，包括卤素原子和/或氧原子。

公开(公告)号：US20100022099A1

公开(公告)日：2010-01-28

申请号：US12573008

申请日：2009-10-02

申请人： Sebastian E. Van Nooten ,  Jan Willem Maes ,  Steven Marcus ,  Glen Wilk ,  Petri Räisänen ,  Kai-Erik Elers

发明人： Sebastian E. Van Nooten ,  Jan Willem Maes ,  Steven Marcus ,  Glen Wilk ,  Petri Räisänen ,  Kai-Erik Elers

IPC分类号： H01L21/302

CPC分类号： H01J37/32082 ,  C23C16/045 ,  C23C16/403 ,  C23C16/448 ,  C23C16/45519 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32935 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3162 ,  H01L29/66181

摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface

摘要翻译： 在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化 以耗尽效应模式运行。 因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。 适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。 在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在 衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

公开(公告)号：US20090280267A1

公开(公告)日：2009-11-12

申请号：US12116894

申请日：2008-05-07

申请人： Dong Li ,  Steven Marcus ,  Glen Wilk ,  Brennan Milligan

发明人： Dong Li ,  Steven Marcus ,  Glen Wilk ,  Brennan Milligan

IPC分类号： C23C16/44 ,  C23C26/00

CPC分类号： C23C16/32 ,  C23C16/4554 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/28562 ,  H01L29/4966

摘要： Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.

摘要翻译： 提供了形成金属碳化物膜的方法。 在一些实施例中，将衬底暴露于过渡金属物质和等离子体激发的氩的交替脉冲。 过渡金属物质与碳物质反应以沉积金属碳化物膜。 底物与过渡金属物质同时暴露于碳物质，或者基板在与过渡金属物质的脉冲暂时分离的脉冲中暴露于碳物质。 在一些实施方案中，碳物质和过渡金属物质形成相同前体化合物的一部分，例如金属有机化合物。

公开(公告)号：US20080182410A1

公开(公告)日：2008-07-31

申请号：US11627597

申请日：2007-01-26

申请人： Kai-Erik Elers ,  Steven Marcus

发明人： Kai-Erik Elers ,  Steven Marcus

IPC分类号： H01L21/44

CPC分类号： H01L21/76841 ,  C23C16/34 ,  C23C16/4554 ,  H01L21/28562 ,  H01L21/76856

摘要： Methods for forming passivated stoichiometric metal nitride films are provided along with structures incorporating such films. The preferred methods include contacting a substrate with alternating and sequential pulses of a metal source chemical, one or more plasma-excited species of hydrogen and a nitrogen source chemical to form a stoichiometric metal nitride film, followed by exposure of the stoichiometric metal nitride film to a source chemical of a passivating species to form a passivation layer over the stoichiometric metal nitride film.

摘要翻译： 形成钝化的化学计量的金属氮化物膜的方法与结合这样的膜的结构一起提供。 优选的方法包括使基底与金属源化学品，一种或多种等离子体激发的氢和氮源化学物质的交替和顺序脉冲接触以形成化学计量的金属氮化物膜，然后将化学计量的金属氮化物膜暴露于 钝化物质的源化学物质，以在化学计量的金属氮化物膜上形成钝化层。

公开(公告)号：US20180020039A1

公开(公告)日：2018-01-18

申请号：US15643029

申请日：2017-07-06

申请人： Michael R. Loeb ,  Dan McCabe ,  Steven Marcus ,  Andrew Bein

发明人： Michael R. Loeb ,  Dan McCabe ,  Steven Marcus ,  Andrew Bein

IPC分类号： H04L29/08 ,  H04W4/00 ,  H04W88/02

摘要： Provided are methods and devices for providing a resource. In one example, a method includes receiving a request to render a resource, the request comprising item information associated with an item, extracting an item identifier from the item information, and determining, by the web server, whether the user device corresponds to an existing user of a mobile application corresponding to the request. In response to determining the user device corresponds to an existing user of the mobile application, the method may include determining a customized URI associated with the item and associated with the mobile application based on the extracted item identifier and transmitting the customized URI. In response to determining the user device does not correspond to an existing user of the mobile application, the method may include transmitting a URL of a web page associated with the mobile application to the user device.

公开(公告)号：US20180018692A1

公开(公告)日：2018-01-18

申请号：US15641816

申请日：2017-07-05

申请人： Michael R. Loeb ,  Dan McCabe ,  Steven Marcus ,  Andrew Bein

发明人： Michael R. Loeb ,  Dan McCabe ,  Steven Marcus ,  Andrew Bein

IPC分类号： G06Q30/02

CPC分类号： G06Q30/0239 ,  G06Q30/0222 ,  G06Q30/0225 ,  G06Q30/0236

摘要： Provided are a system and method for acquiring users. In one example, the method includes providing a rebate offer with respect to a product, receiving, by an application server via the Internet, a request for payment of the rebate and proof of purchase of the product associated with the rebate via a mobile application executing on a mobile device, determining, by the application server, whether the mobile application executing on the mobile device corresponds to a new user of the mobile application, and in response to determining that the mobile application executing on the mobile device corresponds to a new user of the mobile application, authorizing payment of the rebate to a payment account previously registered through the mobile application executing on the mobile device.