公开(公告)号：US20120326171A1

公开(公告)日：2012-12-27

申请号：US13330327

申请日：2011-12-19

Applicant: Sum Geun LEE ,  Jin Cheol SHIN ,  Yeo Jin YOON

Inventor： Sum Geun LEE ,  Jin Cheol SHIN ,  Yeo Jin YOON

IPC: H01L33/62

CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells.

Abstract translation: 本发明涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括：第一组，其包括彼此并联连接的多个第一发光单元;以及第二组，包括与每个并联连接的多个第二发光单元 其他。 每个第一发光单元和第二发光单元具有包括第一导电型半导体层，第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的半导体堆叠， 型半导体层。 第一发光单元的至少两个发光单元共享第一导电型半导体层，并且第二发光单元的至少两个发光单元共享第一导电型半导体层。 第一发光单元与第二发光单元串联连接。

公开(公告)号：US20110127549A1

公开(公告)日：2011-06-02

申请号：US13023876

申请日：2011-02-09

Applicant: Sum Geun LEE ,  Sang Ki JIN ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  So Ra LEE

Inventor： Sum Geun LEE ,  Sang Ki JIN ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  So Ra LEE

IPC: H01L33/46 ,  H01L33/08 ,  H01L33/22

CPC classification number: H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

Abstract translation: 本发明的示例性实施例公开了一种包括具有第一表面和第二表面的基板的发光二极管芯片，布置在基板的第一表面上的发光结构，并且包括布置在第一导电类型半导体层 以及第二导电型半导体层，布置在基板的第二表面上的分布式布拉格反射器，用于反射从发光结构发射的光的分布式布拉格反射器和布置在分布式布拉格反射器上的金属层，其中分布式布拉格反射器 布拉格反射体对于蓝色波长范围内的第一波长的光，绿色波长范围的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率。

公开(公告)号：US20120161176A1

公开(公告)日：2012-06-28

申请号：US13073522

申请日：2011-03-28

Applicant: Min Chan HEO ,  Sang Ki JIN ,  Jong Kyu KIM ,  Jin Cheol SHIN ,  So Ra LEE ,  Sum Geun LEE

Inventor： Min Chan HEO ,  Sang Ki JIN ,  Jong Kyu KIM ,  Jin Cheol SHIN ,  So Ra LEE ,  Sum Geun LEE

IPC: H01L33/50

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.

Abstract translation: 本发明的示例性实施例提供了发光二极管（LED）芯片及其制造方法。 根据示例性实施例的LED芯片包括基板; 布置在基板上的发光结构，以及布置在基板下方的交替叠层底部结构。 所述交替叠层底部结构包括多个电介质对，所述电介质对中的每一个包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，所述第一折射率大于所述第二折射率。

公开(公告)号：US20110114969A1

公开(公告)日：2011-05-19

申请号：US12917937

申请日：2010-11-02

Applicant: Chung Hoon LEE ,  Sum Geun LEE ,  Sang Ki JIN ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  So Ra LEE

Inventor： Chung Hoon LEE ,  Sum Geun LEE ,  Sang Ki JIN ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  So Ra LEE

IPC: H01L33/46 ,  H01L33/08

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

Abstract translation: 本发明的一个示例性实施例公开了一种发光二极管芯片，其包括基板，布置在基板上的发光结构，发光结构包括布置在第一导电型半导体层和第二导电型半导体之间的有源层 层和分布布拉格反射器以反射从发光结构发射的光。 分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。

公开(公告)号：US20110180820A1

公开(公告)日：2011-07-28

申请号：US13077395

申请日：2011-03-31

Applicant: Won Cheol SEO ,  Sum Geun LEE

Inventor： Won Cheol SEO ,  Sum Geun LEE

IPC: H01L33/08 ,  H01L33/46

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/92247

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

公开(公告)号：US20110156064A1

公开(公告)日：2011-06-30

申请号：US12950676

申请日：2010-11-19

Applicant: Won Cheol SEO ,  Sum Geun LEE

Inventor： Won Cheol SEO ,  Sum Geun LEE

IPC: H01L33/46

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/92247

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

Abstract translation: 公开了发光器件及其制造方法。 发光装置包括：基板; 第一和第二发光单元，每个包括第一半导体层，有源层和第二半导体层; 以及位于第一和第二发光单元和基板之间的连接器，以将第一和第二发光单元彼此电连接。 连接器从第一发光单元的第二半导体层延伸穿过衬底，并且穿过第二半导体层的中心区域和第二发光单元的有源层，以与第二发光单元的第一半导体层接触 。

公开(公告)号：US20120007044A1

公开(公告)日：2012-01-12

申请号：US13240501

申请日：2011-09-22

Applicant: Won Cheol SEO ,  Sum Geun LEE

Inventor： Won Cheol SEO ,  Sum Geun LEE

IPC: H01L27/15 ,  H01L33/06

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/92247

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

Abstract translation: 公开了一种发光器件及其制造方法。 发光装置包括：基板; 第一和第二发光单元，每个包括第一半导体层，有源层和第二半导体层; 以及位于第一和第二发光单元和基板之间的连接器，以将第一和第二发光单元彼此电连接。 连接器从第一发光单元的第二半导体层延伸穿过衬底，并且穿过第二半导体层的中心区域和第二发光单元的有源层，以与第二发光单元的第一半导体层接触 。