公开(公告)号：US20120326171A1

公开(公告)日：2012-12-27

申请号：US13330327

申请日：2011-12-19

Applicant: Sum Geun LEE ,  Jin Cheol SHIN ,  Yeo Jin YOON

Inventor： Sum Geun LEE ,  Jin Cheol SHIN ,  Yeo Jin YOON

IPC: H01L33/62

CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells.

Abstract translation: 本发明涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括：第一组，其包括彼此并联连接的多个第一发光单元;以及第二组，包括与每个并联连接的多个第二发光单元 其他。 每个第一发光单元和第二发光单元具有包括第一导电型半导体层，第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的半导体堆叠， 型半导体层。 第一发光单元的至少两个发光单元共享第一导电型半导体层，并且第二发光单元的至少两个发光单元共享第一导电型半导体层。 第一发光单元与第二发光单元串联连接。

公开(公告)号：US20120007109A1

公开(公告)日：2012-01-12

申请号：US13237778

申请日：2011-09-20

Applicant: Won Cheol SEO ,  Joon Hee LEE ,  Jong Kyun YOU ,  Chang Youn KIM ,  Jin Cheul SHIN ,  Hwa Mok KIM ,  Jang Woo LEE ,  Yeo Jin YOON ,  Jong Kyu KIM

Inventor： Won Cheol SEO ,  Joon Hee LEE ,  Jong Kyun YOU ,  Chang Youn KIM ,  Jin Cheul SHIN ,  Hwa Mok KIM ,  Jang Woo LEE ,  Yeo Jin YOON ,  Jong Kyu KIM

IPC: H01L33/08 ,  H01L33/36

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US20100072494A1

公开(公告)日：2010-03-25

申请号：US12626556

申请日：2009-11-25

Applicant: Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

Inventor： Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

IPC: H01L33/00

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/12041

Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires.According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

公开(公告)号：US20130009197A1

公开(公告)日：2013-01-10

申请号：US13617810

申请日：2012-09-14

Applicant: Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

Inventor： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC: H01L33/36

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US20110195538A1

公开(公告)日：2011-08-11

申请号：US13089544

申请日：2011-04-19

Applicant: Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

Inventor： Jun Hee LEE ,  Jong Kyu KIM ,  Yeo Jin YOON

IPC: H01L33/06

CPC classification number: H01L33/0095 ,  H01L33/20

Abstract: The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

Abstract translation: 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。 随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。 因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。

公开(公告)号：US20110114990A1

公开(公告)日：2011-05-19

申请号：US12941536

申请日：2010-11-08

Applicant: Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

Inventor： Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

IPC: H01L33/62

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

Abstract translation: 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

公开(公告)号：US20100032694A1

公开(公告)日：2010-02-11

申请号：US12605146

申请日：2009-10-23

Applicant: Dae Won KIM ,  Yeo Jin YOON ,  Duck Hwan OH ,  Jong Hwan KIM

Inventor： Dae Won KIM ,  Yeo Jin YOON ,  Duck Hwan OH ,  Jong Hwan KIM

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L27/153 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

公开(公告)号：US20090194779A1

公开(公告)日：2009-08-06

申请号：US12173383

申请日：2008-07-15

Applicant: Yeo Jin YOON

Inventor： Yeo Jin YOON

IPC: H01L33/00

CPC classification number: H01L33/385 ,  H01L24/14 ,  H01L27/15 ,  H01L33/44 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.

Abstract translation: 发光二极管包括与有源层并联电连接的电流泄漏通道，以更好地保护发光二极管免受静电。 发光二极管包括衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，有源层上的p型半导体层，p型p型半导体层， 型半导体层和由n型半导体层形成的n电极，通过蚀刻暴露于p型半导体层的一部分。

公开(公告)号：US20120013260A1

公开(公告)日：2012-01-19

申请号：US13243802

申请日：2011-09-23

Applicant: Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Lacroix YVES

Inventor： Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Lacroix YVES

IPC: H05B37/02

CPC classification number: H05B33/0821 ,  H01L24/37 ,  H01L24/40 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2924/00014 ,  H01L2924/12041 ,  H05B33/0803 ,  H05B33/0809 ,  Y02B20/348 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/84

Abstract: The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.

Abstract translation: 本发明涉及一种发光装置。 根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。 在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置 一定的尺寸并控制其数量。

公开(公告)号：US20110215346A1

公开(公告)日：2011-09-08

申请号：US13111406

申请日：2011-05-19

Applicant: Yeo Jin YOON ,  Jong Kyu KIM ,  Jun Hee LEE

Inventor： Yeo Jin YOON ,  Jong Kyu KIM ,  Jun Hee LEE

IPC: H01L33/62

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

Abstract translation: 根据本发明的AC LED包括衬底和至少一个串联阵列，其具有在衬底上串联连接的多个发光单元。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。