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    Top coating composition for photoresist and method of forming photoresist pattern using same
    7.
    发明申请
    Top coating composition for photoresist and method of forming photoresist pattern using same 有权
    用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法

    公开(公告)号：US20060111550A1

    公开(公告)日：2006-05-25

    申请号：US11281775

    申请日：2005-11-17

    申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    IPC分类号： C08F6/00

    CPC分类号： G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  G03F7/2041 ,  Y10S430/146 ,  Y10S430/162

    摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.

    摘要翻译： 提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。 顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯 ，或其组合; 并且m，n和q是其中0.03 <= m /（m + n + q）<=0.97,0.03≤n/（m + n + q）<= 0.97,0 <= q /（m + n + q）<= 0.5; 并且其中所述溶剂包括去离子水。

    Biosensor using nanoscale material as transistor channel and method of fabricating the same
    8.
    发明申请
    Biosensor using nanoscale material as transistor channel and method of fabricating the same 有权
    使用纳米级材料作为晶体管沟道的生物传感器及其制造方法

    公开(公告)号：US20090085072A1

    公开(公告)日：2009-04-02

    申请号：US12232243

    申请日：2008-09-12

    申请人： Moon-Sook Lee ,  Byeong-Ok Cho ,  Man-Hyoung Ryoo ,  Takahiro Yasue ,  Jung-Hwan Hah

    发明人： Moon-Sook Lee ,  Byeong-Ok Cho ,  Man-Hyoung Ryoo ,  Takahiro Yasue ,  Jung-Hwan Hah

    IPC分类号： H01L21/28 ,  H01L29/772

    CPC分类号： G01N27/4145 ,  B82Y10/00 ,  B82Y15/00 ,  G01N27/4146 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time.

    摘要翻译： 实施例涉及使用纳米级材料作为晶体管的沟道的生物传感器及其制造方法。 根据示例性实施例的生物传感器可以包括多个绝缘膜。 第一信号线和第二信号线可以插入在多个绝缘膜之间。 半导体纳米结构可以设置在多个绝缘膜上，半导体纳米结构具有电连接到第一信号线的第一侧和与第二信号线电连接的第二侧。 多个探针可以耦合到半导体纳米结构。 根据示例性实施例的生物传感器可以具有减少的分析时间。

    Top coating composition for photoresist and method of forming photoresist pattern using same
    9.
    发明授权
    Top coating composition for photoresist and method of forming photoresist pattern using same 有权
    用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法

    公开(公告)号：US07384730B2

    公开(公告)日：2008-06-10

    申请号：US11281775

    申请日：2005-11-17

    申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

    IPC分类号： G03F7/38 ,  H01L21/027 ,  G03F7/11

    CPC分类号： G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  G03F7/2041 ,  Y10S430/146 ,  Y10S430/162

    摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.

    摘要翻译： 提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。 顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯 ，或其组合; 并且m，n和q是整数，其中<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= m /（m + n + q）<= 0.97， in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= n /（m + n + q）<= 0.97，<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” α> 0 <= q /（m + n + q）<= 0.5; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其中溶剂包括去离子水。

    Top coating composition for photoresist and method of forming photoresist pattern using the same
    10.
    发明申请
    Top coating composition for photoresist and method of forming photoresist pattern using the same 审中-公开
    用于光致抗蚀剂的顶涂层组合物和使用其形成光刻胶图案的方法

    公开(公告)号：US20060275697A1

    公开(公告)日：2006-12-07

    申请号：US11364707

    申请日：2006-02-27

    申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Hyun-Woo Kim ,  Sang-Gyun Woo ,  Jin-Young Yoon ,  Jung-Hwan Hah

    发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Hyun-Woo Kim ,  Sang-Gyun Woo ,  Jin-Young Yoon ,  Jung-Hwan Hah

    IPC分类号： G03C1/00

    CPC分类号： G03F7/11 ,  G03F7/2041

    摘要： Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.

    摘要翻译： 提供了可用于浸没式光刻的光致抗蚀剂的顶涂层组合物，以及使用其形成光致抗蚀剂图案的方法。 顶部涂料组合物包括：包含至少三种不同结构重复单元的聚合物，其包括第一重复单元，其包含被烷基保护基团或酸不稳定基团取代的羧基，第二重复单元包含酸基，和第三重复单元 包含极性基团的重复单元和包含醇的有机溶剂。