公开(公告)号：US20060071271A1

公开(公告)日：2006-04-06

申请号：US11230624

申请日：2005-09-21

申请人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

发明人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/41766 ,  H01L23/481 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L29/7809 ,  H01L29/7811 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/05005 ,  H01L2224/05541 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises a semiconductor substrate, a first main electrode which is formed on a front surface of the semiconductor substrate, a second main electrode which is formed on a rear surface of the semiconductor substrate, and a conducting portion which is formed in a direction to pierce through the semiconductor substrate, wherein the second main electrode is extracted to the front surface of the semiconductor substrate via the conducting portion. And, the conducting portion is a through via which has a through hole formed through the semiconductor substrate in its thickness direction and a conductive portion which is formed in the through hole and connected to the second main electrode.

摘要翻译： 提供了一种尺寸小型化，电流通路电阻低，寄生电感小，可靠性优异的半导体装置。 该半导体器件包括半导体衬底，形成在半导体衬底的前表面上的第一主电极，形成在半导体衬底的后表面上的第二主电极和形成在半导体衬底的背面上的导电部分 穿过半导体衬底，其中第二主电极经由导电部分被提取到半导体衬底的前表面。 并且，导电部是贯通通孔，该通孔在其厚度方向上形成有通过半导体基板的通孔，以及形成在通孔中并连接到第二主电极的导电部。

公开(公告)号：US20060055050A1

公开(公告)日：2006-03-16

申请号：US11221762

申请日：2005-09-09

申请人： Hideo Numata ,  Hirokazu Ezawa ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Mie Matsuo ,  Ichiro Omura

发明人： Hideo Numata ,  Hirokazu Ezawa ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Mie Matsuo ,  Ichiro Omura

IPC分类号： H01L23/48

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device comprises a semiconductor substrate having an through hole, a first insulation resin layer formed on an inner surface of the through hole, a second insulation resin layer formed on at least one of front and rear surfaces of the semiconductor substrate, and a first conductor layer formed in the through hole to connect at least both front and rear surfaces of the semiconductor substrate and insulated from the inner surface of the through hole with the first insulation resin layer. A second conductor layer (wiring pattern) which is electrically connected to the first conductor layer in the through hole is further provided on the second insulation resin layer. The conductor layer formed in the through hole and constituting a connecting plug has a high insulation reliability. Therefore, a semiconductor device suitable for a multi-chip package and the like can be obtained. Further, since the forming ability of the conductor layer connecting the front and rear surfaces and the insulation layer is high, the manufacturing cost can be reduced.

摘要翻译： 半导体器件包括具有通孔的半导体衬底，形成在通孔的内表面上的第一绝缘树脂层，形成在半导体衬底的前后表面中的至少一个上的第二绝缘树脂层，以及第一绝缘树脂层 形成在所述通孔中的导体层至少连接半导体衬底的前表面和后表面，并与所述通孔的内表面与所述第一绝缘树脂层绝缘。 在第二绝缘树脂层上还设置有与通孔中的第一导体层电连接的第二导体层（布线图案）。 形成在通孔中并构成连接插头的导体层具有高的绝缘可靠性。 因此，可以获得适合于多芯片封装等的半导体器件。 此外，由于连接前后表面和绝缘层的导体层的形成能力高，所以可以降低制造成本。

公开(公告)号：US07531876B2

公开(公告)日：2009-05-12

申请号：US11230624

申请日：2005-09-21

申请人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

发明人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

IPC分类号： H01L23/62

CPC分类号： H01L29/41766 ,  H01L23/481 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L29/7809 ,  H01L29/7811 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/05005 ,  H01L2224/05541 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises a semiconductor substrate, a first main electrode which is formed on a front surface of the semiconductor substrate, a second main electrode which is formed on a rear surface of the semiconductor substrate, and a conducting portion which is formed in a direction to pierce through the semiconductor substrate, wherein the second main electrode is extracted to the front surface of the semiconductor substrate via the conducting portion. And, the conducting portion is a through via which has a through hole formed through the semiconductor substrate in its thickness direction and a conductive portion which is formed in the through hole and connected to the second main electrode.

摘要翻译： 提供了一种尺寸小型化，电流通路电阻低，寄生电感小，可靠性优异的半导体装置。 该半导体器件包括半导体衬底，形成在半导体衬底的前表面上的第一主电极，形成在半导体衬底的后表面上的第二主电极和形成在半导体衬底的背面上的导电部分 穿过半导体衬底，其中第二主电极经由导电部分被提取到半导体衬底的前表面。 并且，导电部是贯通通孔，该通孔在其厚度方向上形成有通过半导体基板的通孔，以及形成在通孔中并连接到第二主电极的导电部。

公开(公告)号：US20060102290A1

公开(公告)日：2006-05-18

申请号：US11221763

申请日：2005-09-09

申请人： Susumu Harada ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Hideo Numata ,  Hisashi Kaneko ,  Hirokazu Ezawa ,  Mie Matsuo ,  Hiroshi Ikenoue ,  Ichiro Omura

发明人： Susumu Harada ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Hideo Numata ,  Hisashi Kaneko ,  Hirokazu Ezawa ,  Mie Matsuo ,  Hiroshi Ikenoue ,  Ichiro Omura

IPC分类号： B32B37/00

CPC分类号： H01L21/6835 ,  H01L21/76898

摘要： A wafer supporting plate is formed of a glass or a resin which can permeate ultraviolet rays and has a nearly disk shape. An outer diameter of the wafer supporting plate is larger than that of the semiconductor wafer which is supported. In the wafer supporting plate, a plurality of openings are formed to correspond to plural through holes of the semiconductor wafer. The opening has an open area larger than an open area of the through hole, that is, has a larger diameter.

摘要翻译： 晶片支撑板由可以渗透紫外线并具有近似圆盘形状的玻璃或树脂形成。 晶片支撑板的外径大于被支撑的半导体晶片的外径。 在晶片支撑板中，形成多个开口以对应于半导体晶片的多个通孔。 开口具有比通孔的开口面积大的开口面积，即具有较大的直径。

公开(公告)号：US20090096051A1

公开(公告)日：2009-04-16

申请号：US12249438

申请日：2008-10-10

申请人： Hitoshi SUGIYAMA ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

发明人： Hitoshi SUGIYAMA ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014

摘要： A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

摘要翻译： 固态成像装置包括：具有形成在其第一主表面侧的成像装置部分的成像装置基板; 设置在成像器件基板的第二主表面侧并电连接到成像器件部分的背面互连电极，第二主表面在第一主表面的相对侧上; 电路基板，设置有与第二主表面相对的电路基板电极; 连接部，其将所述背面侧配线电极与所述电路基板电极电连接; 以及与背面配线电极共同设置的遮光层，或背面配线电极的电路基板侧。

公开(公告)号：US07888760B2

公开(公告)日：2011-02-15

申请号：US12249438

申请日：2008-10-10

申请人： Hitoshi Sugiyama ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

发明人： Hitoshi Sugiyama ,  Atsuko Yamashita ,  Kazutaka Akiyama ,  Susumu Harada ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Kazumasa Tanida ,  Chiaki Takubo ,  Hiroshi Yoshikawa ,  Akihiro Hori

IPC分类号： H01L27/146 ,  H01L31/0216

CPC分类号： H01L27/14634 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014

摘要： A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

摘要翻译： 固态成像装置包括：具有形成在其第一主表面侧的成像装置部分的成像装置基板; 设置在成像器件基板的第二主表面侧并电连接到成像器件部分的背面互连电极，第二主表面在第一主表面的相对侧上; 电路基板，设置有与第二主表面相对的电路基板电极; 连接部，其将所述背面侧配线电极与所述电路基板电极电连接; 以及与背面配线电极共同设置的遮光层，或背面配线电极的电路基板侧。

公开(公告)号：US20100038741A1

公开(公告)日：2010-02-18

申请号：US12539037

申请日：2009-08-11

申请人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

发明人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

IPC分类号： H01L31/02 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor apparatus includes, a semiconductor substrate having first and second main surfaces and a thought hole connecting the first and second main surfaces; a first insulation layer arranged on the first main surface, and having an opening corresponding to the thought hole; a first conductive layer arranged on the first insulation layer, and covering the thought hole; a second insulation layer arranged on an inner wall of the thought hole and the second surface; a second conductive layer arranged in the thought hole and on the second insulation layer, the second conductive layer contacting the first conductive layer; and a filling member arranged on the second conductive layer in the through hole, and having a gap between the second conductive layer on the first main surface side.

摘要翻译： 半导体装置包括具有第一和第二主表面的半导体衬底和连接第一和第二主表面的思想孔; 布置在所述第一主表面上的第一绝缘层，并且具有与所述思想孔对应的开口; 布置在所述第一绝缘层上并覆盖所述思想孔的第一导电层; 布置在思想孔和第二表面的内壁上的第二绝缘层; 布置在思想孔和第二绝缘层上的第二导电层，第二导电层与第一导电层接触; 以及填充构件，其布置在所述通孔中的所述第二导电层上，并且在所述第一主表面侧上的所述第二导电层之间具有间隙。

公开(公告)号：US08426977B2

公开(公告)日：2013-04-23

申请号：US12539037

申请日：2009-08-11

申请人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

发明人： Kazumasa Tanida ,  Hideko Mukaida ,  Susumu Harada ,  Chiaki Takubo

IPC分类号： H01L23/48

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/13 ,  H01L27/14683 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor apparatus includes, a semiconductor substrate having first and second main surfaces and a through hole connecting the first and second main surfaces; a first insulation layer arranged on the first main surface, and having an opening corresponding to the through hole; a first conductive layer arranged on the first insulation layer, and covering the through hole; a second insulation layer arranged on an inner wall of the through hole and the second surface; a second conductive layer arranged in the through hole and on the second insulation layer, the second conductive layer contacting the first conductive layer; and a filling member arranged on the second conductive layer in the through hole, and having a gap between the second conductive layer on the first main surface side.

摘要翻译： 半导体装置包括具有第一和第二主表面的半导体衬底和连接第一和第二主表面的通孔; 布置在所述第一主表面上并具有与所述通孔对应的开口的第一绝缘层; 布置在所述第一绝缘层上并覆盖所述通孔的第一导电层; 布置在所述通孔的内壁和所述第二表面上的第二绝缘层; 布置在所述通孔中和所述第二绝缘层上的第二导电层，所述第二导电层与所述第一导电层接触; 以及填充构件，其布置在所述通孔中的所述第二导电层上，并且在所述第一主表面侧上的所述第二导电层之间具有间隙。

公开(公告)号：US5198883A

公开(公告)日：1993-03-30

申请号：US381843

申请日：1989-07-19

申请人： Kenji Takahashi ,  Yasuhiro Yamaji ,  Susumu Harada ,  Kazuichi Komenaka ,  Mitsugu Miyamoto ,  Masashi Muromachi ,  Hiroshi Harada ,  Kazuo Numajiri ,  Haruyuki Shimakawa ,  Toshiharu Sakurai

发明人： Kenji Takahashi ,  Yasuhiro Yamaji ,  Susumu Harada ,  Kazuichi Komenaka ,  Mitsugu Miyamoto ,  Masashi Muromachi ,  Hiroshi Harada ,  Kazuo Numajiri ,  Haruyuki Shimakawa ,  Toshiharu Sakurai

IPC分类号： H01L23/28 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50

CPC分类号： H01L23/4951 ,  H01L23/3135 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49544 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/32014 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/181

摘要： First and second frame bodies are used to fabricate a semiconductor device. The first frame body includes a die pad. The second frame body only includes a plurality of leads. The die pad is depressed by a predetermined amount which is equal or greater than the thickness of a semiconductor chip to be mounted on the die pad. The two frame bodies are welded, and wire bonding and cutting of the leads are performed.

摘要翻译： 第一（30）和第二（40）个框体用于制造半导体器件。 第一框架体（30）包括管芯焊盘（33）。 第二框体（40）包括多个引线（42）。 芯片焊盘被按压预定量（h），该预定量（h）等于或大于待安装在芯片焊盘上的半导体芯片（50）的厚度。 焊接两个框架体，进行引线接合和切割。

公开(公告)号：US08425165B2

公开(公告)日：2013-04-23

申请号：US13137784

申请日：2011-09-13

申请人： Susumu Harada ,  Takashi Suzuki ,  Tsuyoshi Abe ,  Tomoaki Arai

发明人： Susumu Harada ,  Takashi Suzuki ,  Tsuyoshi Abe ,  Tomoaki Arai

IPC分类号： B60P7/06

CPC分类号： B65D19/44 ,  B65D19/0026 ,  B65D2519/00024 ,  B65D2519/00034 ,  B65D2519/00059 ,  B65D2519/00069 ,  B65D2519/00094 ,  B65D2519/00104 ,  B65D2519/00273 ,  B65D2519/00288 ,  B65D2519/00323 ,  B65D2519/00333 ,  B65D2519/00562 ,  B65D2519/00572 ,  B65D2519/00815 ,  B65D2585/6892

摘要： A pallet apparatus includes a pallet base including a caster unit and a mounting plate for mounting a product having a first fastening unit; a fixing member disposed between the product and the mounting plate of the pallet base; and a second fastening unit fixing the fixing member onto the mounting plate. The product can be fixed to or released from the fixing member by fastening or unfastening the first fastening unit. The fixing member includes a slit at a position corresponding to the first fastening unit, the slit allowing the fixing member to be inserted between or detached from the product and the mounting plate without contacting the first fastening unit.

摘要翻译： 托盘装置包括托盘底座，其包括脚轮单元和用于安装具有第一紧固单元的产品的安装板; 设置在所述产品和所述托盘基座的安装板之间的固定构件; 以及将固定构件固定到安装板上的第二紧固单元。 通过紧固或松开第一紧固单元，产品可以固定到固定构件上或从固定构件释放。 固定构件在与第一紧固单元相对应的位置处包括狭缝，该狭缝允许固定构件插入产品和安装板之间，或者不与第一紧固单元接触。