公开(公告)号：US20060102290A1

公开(公告)日：2006-05-18

申请号：US11221763

申请日：2005-09-09

申请人： Susumu Harada ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Hideo Numata ,  Hisashi Kaneko ,  Hirokazu Ezawa ,  Mie Matsuo ,  Hiroshi Ikenoue ,  Ichiro Omura

发明人： Susumu Harada ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Hideo Numata ,  Hisashi Kaneko ,  Hirokazu Ezawa ,  Mie Matsuo ,  Hiroshi Ikenoue ,  Ichiro Omura

IPC分类号： B32B37/00

CPC分类号： H01L21/6835 ,  H01L21/76898

摘要： A wafer supporting plate is formed of a glass or a resin which can permeate ultraviolet rays and has a nearly disk shape. An outer diameter of the wafer supporting plate is larger than that of the semiconductor wafer which is supported. In the wafer supporting plate, a plurality of openings are formed to correspond to plural through holes of the semiconductor wafer. The opening has an open area larger than an open area of the through hole, that is, has a larger diameter.

摘要翻译： 晶片支撑板由可以渗透紫外线并具有近似圆盘形状的玻璃或树脂形成。 晶片支撑板的外径大于被支撑的半导体晶片的外径。 在晶片支撑板中，形成多个开口以对应于半导体晶片的多个通孔。 开口具有比通孔的开口面积大的开口面积，即具有较大的直径。

公开(公告)号：US20060055050A1

公开(公告)日：2006-03-16

申请号：US11221762

申请日：2005-09-09

申请人： Hideo Numata ,  Hirokazu Ezawa ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Mie Matsuo ,  Ichiro Omura

发明人： Hideo Numata ,  Hirokazu Ezawa ,  Chiaki Takubo ,  Kenji Takahashi ,  Hideo Aoki ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Mie Matsuo ,  Ichiro Omura

IPC分类号： H01L23/48

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device comprises a semiconductor substrate having an through hole, a first insulation resin layer formed on an inner surface of the through hole, a second insulation resin layer formed on at least one of front and rear surfaces of the semiconductor substrate, and a first conductor layer formed in the through hole to connect at least both front and rear surfaces of the semiconductor substrate and insulated from the inner surface of the through hole with the first insulation resin layer. A second conductor layer (wiring pattern) which is electrically connected to the first conductor layer in the through hole is further provided on the second insulation resin layer. The conductor layer formed in the through hole and constituting a connecting plug has a high insulation reliability. Therefore, a semiconductor device suitable for a multi-chip package and the like can be obtained. Further, since the forming ability of the conductor layer connecting the front and rear surfaces and the insulation layer is high, the manufacturing cost can be reduced.

摘要翻译： 半导体器件包括具有通孔的半导体衬底，形成在通孔的内表面上的第一绝缘树脂层，形成在半导体衬底的前后表面中的至少一个上的第二绝缘树脂层，以及第一绝缘树脂层 形成在所述通孔中的导体层至少连接半导体衬底的前表面和后表面，并与所述通孔的内表面与所述第一绝缘树脂层绝缘。 在第二绝缘树脂层上还设置有与通孔中的第一导体层电连接的第二导体层（布线图案）。 形成在通孔中并构成连接插头的导体层具有高的绝缘可靠性。 因此，可以获得适合于多芯片封装等的半导体器件。 此外，由于连接前后表面和绝缘层的导体层的形成能力高，所以可以降低制造成本。

公开(公告)号：US20060071271A1

公开(公告)日：2006-04-06

申请号：US11230624

申请日：2005-09-21

申请人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

发明人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/41766 ,  H01L23/481 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L29/7809 ,  H01L29/7811 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/05005 ,  H01L2224/05541 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises a semiconductor substrate, a first main electrode which is formed on a front surface of the semiconductor substrate, a second main electrode which is formed on a rear surface of the semiconductor substrate, and a conducting portion which is formed in a direction to pierce through the semiconductor substrate, wherein the second main electrode is extracted to the front surface of the semiconductor substrate via the conducting portion. And, the conducting portion is a through via which has a through hole formed through the semiconductor substrate in its thickness direction and a conductive portion which is formed in the through hole and connected to the second main electrode.

摘要翻译： 提供了一种尺寸小型化，电流通路电阻低，寄生电感小，可靠性优异的半导体装置。 该半导体器件包括半导体衬底，形成在半导体衬底的前表面上的第一主电极，形成在半导体衬底的后表面上的第二主电极和形成在半导体衬底的背面上的导电部分 穿过半导体衬底，其中第二主电极经由导电部分被提取到半导体衬底的前表面。 并且，导电部是贯通通孔，该通孔在其厚度方向上形成有通过半导体基板的通孔，以及形成在通孔中并连接到第二主电极的导电部。

公开(公告)号：US07531876B2

公开(公告)日：2009-05-12

申请号：US11230624

申请日：2005-09-21

申请人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

发明人： Ichiro Omura ,  Kenji Takahashi ,  Chiaki Takubo ,  Hideo Aoki ,  Hideo Numata ,  Mie Matsuo ,  Hirokazu Ezawa ,  Susumu Harada ,  Hisashi Kaneko ,  Hiroshi Ikenoue ,  Kenichi Matsushita

IPC分类号： H01L23/62

CPC分类号： H01L29/41766 ,  H01L23/481 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L29/7809 ,  H01L29/7811 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/05005 ,  H01L2224/05541 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises a semiconductor substrate, a first main electrode which is formed on a front surface of the semiconductor substrate, a second main electrode which is formed on a rear surface of the semiconductor substrate, and a conducting portion which is formed in a direction to pierce through the semiconductor substrate, wherein the second main electrode is extracted to the front surface of the semiconductor substrate via the conducting portion. And, the conducting portion is a through via which has a through hole formed through the semiconductor substrate in its thickness direction and a conductive portion which is formed in the through hole and connected to the second main electrode.

摘要翻译： 提供了一种尺寸小型化，电流通路电阻低，寄生电感小，可靠性优异的半导体装置。 该半导体器件包括半导体衬底，形成在半导体衬底的前表面上的第一主电极，形成在半导体衬底的后表面上的第二主电极和形成在半导体衬底的背面上的导电部分 穿过半导体衬底，其中第二主电极经由导电部分被提取到半导体衬底的前表面。 并且，导电部是贯通通孔，该通孔在其厚度方向上形成有通过半导体基板的通孔，以及形成在通孔中并连接到第二主电极的导电部。

公开(公告)号：US08228426B2

公开(公告)日：2012-07-24

申请号：US12511099

申请日：2009-07-29

申请人： Mie Matsuo ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Mie Matsuo ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H04N5/225 ,  H01L21/00 ,  H01L31/062

CPC分类号： H04N5/2257 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14625 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

摘要翻译： 半导体封装包括固态成像元件，电极焊盘，通孔电极和透光衬底。 固态成像元件形成在半导体衬底的第一主表面上。 电极焊盘形成在半导体衬底的第一主表面上。 通孔电极形成为在第一主表面和与形成在第一主表面上的电极焊盘相对的第二主表面之间延伸穿过半导体衬底。 将透光基板放置在图案化的粘合剂上以在固态成像元件上形成中空。 从透光性基板观察时，半导体衬底在中空部下方的厚度大于粘合剂下方的半导体衬底的厚度。

公开(公告)号：US20090284631A1

公开(公告)日：2009-11-19

申请号：US12511099

申请日：2009-07-29

申请人： Mie MATSUO ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Mie MATSUO ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H04N5/225 ,  H01L31/0232

CPC分类号： H04N5/2257 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14625 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

摘要翻译： 半导体封装包括固态成像元件，电极焊盘，通孔电极和透光衬底。 固态成像元件形成在半导体衬底的第一主表面上。 电极焊盘形成在半导体衬底的第一主表面上。 通孔电极形成为在第一主表面和与形成在第一主表面上的电极焊盘相对的第二主表面之间延伸穿过半导体衬底。 将透光基板放置在图案化的粘合剂上以在固态成像元件上形成中空。 从透光性基板观察时，半导体衬底在中空部下方的厚度大于粘合剂下方的半导体衬底的厚度。

公开(公告)号：US20120190138A1

公开(公告)日：2012-07-26

申请号：US13354734

申请日：2012-01-20

申请人： Kazumasa TANIDA ,  Satoshi Hongo ,  Naoko Yamaguchi ,  Kenji Takahashi ,  Hideo Numata

发明人： Kazumasa TANIDA ,  Satoshi Hongo ,  Naoko Yamaguchi ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L21/66 ,  B32B37/30 ,  B32B41/00

CPC分类号： H01L21/681 ,  H01L21/67092 ,  H01L21/6838 ,  H01L27/1464

摘要： According to one embodiment, semiconductor manufacturing apparatus includes a first member that holds a first semiconductor substrate; a second member that holds a second semiconductor substrate in a state where a bonding surface of the second semiconductor substrate faces a bonding surface of the first semiconductor substrate; a distance detecting unit that detects a distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate; an adjusting unit that adjusts the distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate to a predetermined value by moving at least one of the first and second members based on a detection result of the distance detecting unit; and a third member that forms the bonding start point between the first semiconductor substrate and the second semiconductor substrate.

摘要翻译： 根据一个实施例，半导体制造装置包括保持第一半导体衬底的第一构件; 第二构件，其在第二半导体衬底的接合表面面对第一半导体衬底的接合表面的状态下保持第二半导体衬底; 距离检测单元，其检测第一半导体衬底的接合表面和第二半导体衬底的接合表面之间的距离; 调整单元，其基于所述距离检测单元的检测结果，通过移动所述第一和第二构件中的至少一个来调整所述第一半导体衬底的接合表面与所述第二半导体衬底的接合表面之间的距离为预定值 ; 以及在第一半导体衬底和第二半导体衬底之间形成接合起始点的第三构件。

公开(公告)号：US20120217600A1

公开(公告)日：2012-08-30

申请号：US13368930

申请日：2012-02-08

申请人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

发明人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。

公开(公告)号：US20070235882A1

公开(公告)日：2007-10-11

申请号：US11783369

申请日：2007-04-09

申请人： Masahiro Sekiguchi ,  Kenji Takahashi ,  Hideo Numata ,  Tatsuhiko Shirakawa ,  Ninao Sato

发明人： Masahiro Sekiguchi ,  Kenji Takahashi ,  Hideo Numata ,  Tatsuhiko Shirakawa ,  Ninao Sato

IPC分类号： H01L23/52

CPC分类号： H01L23/3128 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05111 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/24226 ,  H01L2224/73267 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/00014

摘要： A semiconductor device includes a semiconductor substrate with an electrode pad on a main surface of the semiconductor substrate; a first penetrating electrode which includes a through hole formed through the semiconductor substrate in the thickness direction so as to reach a metallic bump formed on the electrode pad, an insulating resin formed to fill the through hole in and a conductor formed in the through hole with insulated from the semiconductor substrate by the insulating resin and electrically to connect the electrode pad and the rear surface of the semiconductor wafer; a semiconductor chip mounted on the rear surface of the semiconductor wafer so that a rear surface of the semiconductor chip is faced to the rear surface of the semiconductor wafer; and a wiring to electrically connect the first penetrating electrode and an electrode formed on the semiconductor chip.

摘要翻译： 半导体器件包括在半导体衬底的主表面上具有电极焊盘的半导体衬底; 第一穿透电极，其包括在厚度方向上穿过所述半导体衬底形成的通孔，以到达形成在所述电极焊盘上的金属凸块;形成为填充所述通孔的绝缘树脂和形成在所述通孔中的导体， 通过绝缘树脂与半导体衬底绝缘，并电连接电极焊盘和半导体晶片的后表面; 半导体芯片安装在半导体晶片的后表面上，使得半导体芯片的后表面面对半导体晶片的后表面; 以及电连接第一穿透电极和形成在半导体芯片上的电极的布线。

公开(公告)号：US08980671B2

公开(公告)日：2015-03-17

申请号：US13368930

申请日：2012-02-08

申请人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

发明人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L27/146 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。