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公开(公告)号：US08605769B2
公开(公告)日：2013-12-10
申请号：US11665286
申请日：2005-12-06
申请人： Susumu Yoshimoto , Hideki Matsubara , Hirohisa Saitou , Takashi Misaki , Fumitake Nakanishi , Hiroki Mori
发明人： Susumu Yoshimoto , Hideki Matsubara , Hirohisa Saitou , Takashi Misaki , Fumitake Nakanishi , Hiroki Mori
IPC分类号： H01S3/08
CPC分类号： H01S5/18 , B82Y20/00 , G02B6/1225 , H01S5/105 , H01S5/34333 , H01S2301/14 , H01S2304/04 , H01S2304/12
摘要： A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.
摘要翻译： 半导体激光装置包括：具有主平面的基板; 具有在主平面延伸的方向上形成在衬底上的氮化镓外延层和折射率低于外延层的低折射率材料的光子晶体层; 形成在基板上的n型覆层; 形成在基板上的p型覆层; 介于n型覆盖层和p型覆盖层之间的有源层，并且在载体被注入时发射光; 以及覆盖直接在光子晶体层上的区域的GaN层。 因此，可以不融合地制造半导体激光装置。
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公开(公告)号：US20070280318A1
公开(公告)日：2007-12-06
申请号：US11665286
申请日：2005-12-06
申请人： Susumu Yoshimoto , Hideki Matsubara , Hirohisa Saitou , Takashi Misaki , Fumitake Nakanishi , Hiroki Mori
发明人： Susumu Yoshimoto , Hideki Matsubara , Hirohisa Saitou , Takashi Misaki , Fumitake Nakanishi , Hiroki Mori
CPC分类号： H01S5/18 , B82Y20/00 , G02B6/1225 , H01S5/105 , H01S5/34333 , H01S2301/14 , H01S2304/04 , H01S2304/12
摘要： A semiconductor laser device (1) includes: a substrate (3) having a principal plane (3a); a photonic crystal layer (7) having an epitaxial layer (2a) of gallium nitride formed on substrate (3) in a direction in which principal plane (3a) extends and a low refractive index material (2b) having a refractive index lower than that of epitaxial layer (2a); an n-type clad layer (4) formed on substrate (3); a p-type clad layer (6) formed on substrate (3); an active layer (5) that is interposed between n-type clad layer (4) and p-type clad layer (6) and emits light when a carrier is injected thereinto; and a GaN layer (12) that covers a region directly on photonic crystal layer (7). Thus, the semiconductor laser device can be manufactured without fusion.
摘要翻译： 半导体激光装置（1）包括：具有主平面（3a）的基板（3）; 具有在主平面（3a）延伸的方向上形成在衬底（3）上的氮化镓的外延层（2a）和具有折射率的低折射率材料（2b）的光子晶体层（7） 低于外延层（2a）; 形成在基板（3）上的n型覆盖层（4）; 形成在基板（3）上的p型覆盖层（6）; 介于n型覆盖层（4）和p型覆盖层（6）之间的有源层（5），并且在载体被注入时发射光; 以及覆盖直接在光子晶体层（7）上的区域的GaN层（12）。 因此，可以不融合地制造半导体激光装置。
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3.发明申请SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF 失效表面发射激光元件，其制造方法，表面发射激光阵列及其制造方法公开(公告)号：US20100172390A1
公开(公告)日：2010-07-08
申请号：US12376911
申请日：2007-05-21
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0206 , H01S5/0215 , H01S5/105 , H01S5/18308 , H01S5/18341 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/173
摘要： A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
摘要翻译： 表面发射激光元件的制造方法包括制备包括高位错密度高电导区，低位错密度高电导区和低位错密度低电导区的导电GaN多区衬底作为导电 GaN衬底; 在衬底上形成包括发射层的多个III-V族化合物半导体层堆叠的半导体层堆叠形成步骤; 以及形成半导体侧电极和基板侧电极的电极形成工序。 形成半导体层和电极，使得载流子在发射层中流动的发射区域位于低位错密度高电导区域的跨度之内和之内。 因此，可以以良好的产率获得在发射区域具有均匀发光的表面发射激光元件。
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4.发明授权Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof 失效表面发射激光元件及其制造方法，表面发射激光器阵列及其制造方法公开(公告)号：US08274088B2
公开(公告)日：2012-09-25
申请号：US12376911
申请日：2007-05-21
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0206 , H01S5/0215 , H01S5/105 , H01S5/18308 , H01S5/18341 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/173
摘要： A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor layer side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
摘要翻译： 表面发射激光元件的制造方法包括制备包括高位错密度高电导区，低位错密度高电导区和低位错密度低电导区的导电GaN多区衬底作为导电 GaN衬底; 在衬底上形成包括发射层的III-V族化合物半导体层堆叠的半导体层堆叠形成步骤; 以及形成半导体层侧电极和基板侧电极的电极形成工序。 形成半导体层和电极，使得载流子在发射层中流动的发射区域位于低位错密度高电导区域的跨度之内和之内。 因此，可以以良好的产率获得在发射区域具有均匀发光的表面发射激光元件。
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公开(公告)号：US08012780B2
公开(公告)日：2011-09-06
申请号：US12170998
申请日：2008-07-10
申请人： Susumu Yoshimoto , Hideki Matsubara
发明人： Susumu Yoshimoto , Hideki Matsubara
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/1017 , H01S5/105 , H01S5/1231 , H01S5/2009
摘要： There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1−X1N (0
摘要翻译： 提供了一种制造包括二维光子晶体的半导体激光器的方法。 该方法包括以下步骤：在反应器中的氮化镓基半导体区域上生长InX1Ga1-X1N（0
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公开(公告)号：US20090047751A1
公开(公告)日：2009-02-19
申请号：US12170998
申请日：2008-07-10
申请人： Susumu Yoshimoto , Hideki Matsubara
发明人： Susumu Yoshimoto , Hideki Matsubara
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/1017 , H01S5/105 , H01S5/1231 , H01S5/2009
摘要： There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1-X1N (0
摘要翻译： 提供了一种制造包括二维光子晶体的半导体激光器的方法。 该方法包括以下步骤：在反应器中的氮化镓基半导体区域上生长InX1Ga1-X1N（0
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公开(公告)号：US08658517B2
公开(公告)日：2014-02-25
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
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公开(公告)号：US20130137220A1
公开(公告)日：2013-05-30
申请号：US13814037
申请日：2012-03-26
申请人： Hideki Matsubara , Kuniaki Ishihara
发明人： Hideki Matsubara , Kuniaki Ishihara
IPC分类号： H01L21/50
CPC分类号： H01L21/50 , H01L21/187 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/81 , H01L33/0079 , H01L2224/03002 , H01L2224/0401 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/0603 , H01L2224/13144 , H01L2224/16225 , H01L2224/81005 , H01L2924/1033 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00
摘要： A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.
摘要翻译： 制造GaN基半导体器件的方法包括以下步骤：制备复合衬底，该复合衬底包括：热膨胀系数相对于GaN的热膨胀系数不小于0.8且不大于1.2的支撑衬底 ; 以及使用离子注入分离方法结合到所述支撑衬底的GaN层; 在复合衬底的GaN层上生长至少一个GaN基半导体层; 以及通过溶解所述支撑基板来移除所述复合基板的所述支撑基板。 因此，提供了制造GaN基半导体器件的方法，通过其可以以高屈服比制造具有优异特性的GaN基半导体器件。
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9.发明授权公开(公告)号：US08155163B2
公开(公告)日：2012-04-10
申请号：US12531855
申请日：2008-01-29
申请人： Hirohisa Saito , Hideki Matsubara
发明人： Hirohisa Saito , Hideki Matsubara
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , B82Y20/00 , H01L2224/48091 , H01L2224/48463 , H01S5/0206 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/105 , H01S5/2009 , H01S5/34333 , H01L2924/00014
摘要： A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.
摘要翻译： 光子晶体激光器包括n型衬底，n型覆盖层，有源层，p型覆盖层，光子晶体层，p型电极，n型电极和封装构件。 n型覆盖层形成在n型衬底的第一表面上。 有源层形成在n型覆层上。 p型覆盖层形成在有源层上。 光子晶体层形成在n型覆盖层与有源层之间或者在有源层与p型覆盖层之间，并且包括光子晶体部分。 p型电极形成在光子晶体部分上。 n型电极形成在第二表面上，并且包括布置在与光子晶体部分相对的位置的透光部分和具有比透光部分低的透光率的外周部分。
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公开(公告)号：US06420731B1
公开(公告)日：2002-07-16
申请号：US09603855
申请日：2000-06-26
申请人： Koji Katayama , Hideki Matsubara , Akihiko Saegusa
发明人： Koji Katayama , Hideki Matsubara , Akihiko Saegusa
IPC分类号： H01L2715
摘要： An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a region near the cleavage plane serves as the injected current restriction region.
摘要翻译： 在ZnSe基LED内部设置用于通过限制用于发光的注入电流来限制缺陷增加的注入电流限制区域。 当透光性Au电极的端部与解理面分离时，解理面附近的区域成为注入电流限制区域。
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