公开(公告)号：US12119384B2

公开(公告)日：2024-10-15

申请号：US18059701

申请日：2022-11-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Po-Yu Chen ,  Wan-Hua Huang ,  Jing-Ying Chen

IPC分类号： H01L29/40 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/402 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66689 ,  H01L29/7816

摘要： A semiconductor device includes an isolation structure in a substrate; and a gate structure over an active region of the substrate. The isolation structure surrounds the active region. The gate structure includes a first section parallel to a second section. The semiconductor device further includes a conductive field plate extending between the first section and the second section and overlapping an edge of the active region. A portion of the conductive field plate extends beyond the edge of the active region, The conductive field plate includes a dielectric layer having a first portion and a second portion, and the first portion is thicker than the second portion. The semiconductor device includes a first well overlapping the edge of the active region. The first well extends underneath the isolation structure. The conductive field plate extends beyond an outer-most edge of the first well.

公开(公告)号：US10516045B2

公开(公告)日：2019-12-24

申请号：US15646968

申请日：2017-07-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Yu Chen

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L29/786 ,  H01L29/66 ,  H01L29/06 ,  H01L21/265 ,  H01L27/12 ,  H01L29/08 ,  H01L29/10

摘要： A lateral trench MOSFET comprises an insulating layer buried in a substrate, a body region in the substrate, an isolation region in the substrate, a first drain/source region over the body region, a second drain/source region in the substrate, wherein the first drain/source region and the second drain/source region are on opposing sides of the isolation region, a drift region comprising a first drift region of a first doping density formed between the second drain/source region and the insulating layer, wherein the first drift region comprises an upper portion surrounded by isolation regions and a lower portion and a second drift region of a second doping density formed between the isolation region and the insulating layer, wherein a height of the second drift region is equal to a height of the lower portion of the first drift region.

公开(公告)号：US20170309742A1

公开(公告)日：2017-10-26

申请号：US15646968

申请日：2017-07-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Yu Chen

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762 ,  H01L29/786

CPC分类号： H01L29/7809 ,  H01L21/26513 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7812 ,  H01L29/7813 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/78642

摘要： A lateral trench MOSFET comprises an insulating layer buried in a substrate, a body region in the substrate, an isolation region in the substrate, a first drain/source region over the body region, a second drain/source region in the substrate, wherein the first drain/source region and the second drain/source region are on opposing sides of the isolation region, a drift region comprising a first drift region of a first doping density formed between the second drain/source region and the insulating layer, wherein the first drift region comprises an upper portion surrounded by isolation regions and a lower portion and a second drift region of a second doping density formed between the isolation region and the insulating layer, wherein a height of the second drift region is equal to a height of the lower portion of the first drift region.

公开(公告)号：US20240063074A1

公开(公告)日：2024-02-22

申请号：US17889868

申请日：2022-08-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Yu Chen ,  Yu Hsiang Chen ,  Cheng Hung Wu ,  Wei-Pin Changchien ,  Ming-Fa Chen

IPC分类号： H01L23/367 ,  H01L23/473 ,  H01L23/373 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L23/367 ,  H01L23/473 ,  H01L23/3732 ,  H01L23/3736 ,  H01L23/3738 ,  H01L23/373 ,  H01L25/0657 ,  H01L25/50 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/29105 ,  H01L2224/29117 ,  H01L2224/29144 ,  H01L2224/2916 ,  H01L2224/29123 ,  H01L2224/29155 ,  H01L2224/29169 ,  H01L2224/29139 ,  H01L2224/29166 ,  H01L2224/29184 ,  H01L2224/29118 ,  H01L2224/29138 ,  H01L2224/29193 ,  H01L2224/29186 ,  H01L24/29 ,  H01L2224/08145 ,  H01L24/08 ,  H01L2224/16145 ,  H01L24/16 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L24/73

摘要： A semiconductor package is disclosed. The semiconductor package includes a package substrate. The semiconductor package includes a semiconductor die having a first surface attached to the package substrate and a second surface. The semiconductor package includes a heat sink attached to the second surface of the semiconductor die. The semiconductor package includes a heat dissipation layer interposed between the heat sink and the semiconductor die. The heat dissipation layer comprises one or more high-k dielectric materials.

公开(公告)号：US11527624B2

公开(公告)日：2022-12-13

申请号：US16775047

申请日：2020-01-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Po-Yu Chen ,  Wan-Hua Huang ,  Jing-Ying Chen

IPC分类号： H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

摘要： A method of manufacturing a semiconductor device includes forming a gate structure over an active region of a substrate, the gate structure comprising a first section and a second section. The first section and the second section dividing the active region into a first source/drain region between the first section and the second section, and a pair of second source/drain regions arranged on opposite sides of the gate structure. The method further includes forming a conductive field plate over the substrate, the field plate extending between the first section and the second section and overlapping an edge of the active region. The method further includes implanting a first well in the substrate, wherein the first well overlaps the edge of the active region. The method further includes forming an isolation structure in the substrate, wherein the conductive field plate extends over the isolation structure.

公开(公告)号：US09754839B2

公开(公告)日：2017-09-05

申请号：US15009942

申请日：2016-01-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Yu Chen

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/265 ,  H01L21/283 ,  H01L21/306 ,  H01L21/31 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L21/823487 ,  H01L21/265 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/31 ,  H01L21/31116 ,  H01L21/3213 ,  H01L21/32133 ,  H01L21/76879 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/4236 ,  H01L29/45 ,  H01L29/66666

摘要： A method comprises depositing a first dielectric layer on a top surface of a substrate, implanting ions of a first conductivity type into the substrate, forming a first trench and a second trench in the substrate, forming a first gate in the first trench and a second gate in the second trench and forming a first drain/source region, a second drain/source region and a third drain/source region with the first conductivity type, wherein the first drain/source region and the second drain/source region are formed on opposing sides of the first gate and the third drain/source region and the second drain/source region are formed on opposing sides of the second gate.

公开(公告)号：US20160005855A1

公开(公告)日：2016-01-07

申请号：US14852049

申请日：2015-09-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Yu Chen

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L27/12 ,  H01L29/66 ,  H01L21/265 ,  H01L29/10 ,  H01L29/06

CPC分类号： H01L29/7809 ,  H01L21/26513 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7812 ,  H01L29/7813 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/78642

摘要： A lateral trench MOSFET comprises an insulating layer buried in a substrate, a body region in the substrate, an isolation region in the substrate, a first drain/source region over the body region, a second drain/source region in the substrate, wherein the first drain/source region and the second drain/source region are on opposing sides of the isolation region, a drift region comprising a first drift region of a first doping density formed between the second drain/source region and the insulating layer, wherein the first drift region comprises an upper portion surrounded by isolation regions and a lower portion and a second drift region of a second doping density formed between the isolation region and the insulating layer, wherein a height of the second drift region is equal to a height of the lower portion of the first drift region.

摘要翻译： 横向沟槽MOSFET包括埋在衬底中的绝缘层，衬底中的主体区域，衬底中的隔离区域，身体区域上的第一漏极/源极区域，衬底中的第二漏极/源极区域，其中， 第一漏极/源极区域和第二漏极/源极区域在隔离区域的相对侧上，漂移区域包括形成在第二漏极/源极区域和绝缘层之间的第一掺杂密度的第一漂移区域，其中第一 漂移区域包括由隔离区围绕的上部和形成在隔离区和绝缘层之间的第二掺杂浓度的下部和第二漂移区，其中第二漂移区的高度等于下部的高度 第一漂移区域的一部分。

公开(公告)号：US11283402B2

公开(公告)日：2022-03-22

申请号：US17115445

申请日：2020-12-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ping-Han Tsai ,  Chih-Sheng Hou ,  Po-Yu Chen ,  Nan-Hsin Tseng

IPC分类号： G04C21/36 ,  H03B5/36 ,  H03K3/03 ,  H03B5/04 ,  H03K5/00

摘要： A device includes a sensor configured to provide a temperature-sensitive voltage and an oscillator. The sensor includes: a first transistor, being a diode-connected transistor; a second transistor coupled between a source of the first transistor and ground, wherein a gate of the second transistor is controllable by an enable signal; and a current source configured to control the first transistor and comprising a third transistor, a drain of which is directly connected to a drain of the first transistor, the third transistor being a diode-connected transistor. The oscillator includes: a digital delay cell; and an adjustment device configured to, based on the temperature-sensitive voltage, adjust a delay of the digital delay cell. The digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

公开(公告)号：US11024732B2

公开(公告)日：2021-06-01

申请号：US16715199

申请日：2019-12-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Yu Chen

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L29/786 ,  H01L29/66 ,  H01L29/06 ,  H01L21/265 ,  H01L27/12 ,  H01L29/08 ,  H01L29/10

摘要： A lateral trench MOSFET comprises an insulating layer buried in a substrate, a body region in the substrate, an isolation region in the substrate, a first drain/source region over the body region, a second drain/source region in the substrate, wherein the first drain/source region and the second drain/source region are on opposing sides of the isolation region, a drift region comprising a first drift region of a first doping density formed between the second drain/source region and the insulating layer, wherein the first drift region comprises an upper portion surrounded by isolation regions and a lower portion and a second drift region of a second doping density formed between the isolation region and the insulating layer, wherein a height of the second drift region is equal to a height of the lower portion of the first drift region.

公开(公告)号：US10553687B2

公开(公告)日：2020-02-04

申请号：US14051724

申请日：2013-10-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Po-Yu Chen ,  Wan-Hua Huang ,  Jing-Ying Chen

IPC分类号： H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

摘要： A semiconductor device includes a substrate having an active region, a drain region in the active region, a source region in the active region, a gate structure, and a conductive field plate. The gate structure extends in a first direction over the active region. The gate structure is arranged between the drain region and the source region in a second direction transverse to the first direction. The conductive field plate extends in the second direction over an edge of the active region.