Selective Curing Method of Adhesive on Substrate
    4.
    发明申请
    Selective Curing Method of Adhesive on Substrate 有权
    基材上粘合剂的选择性固化方法

    公开(公告)号:US20140261997A1

    公开(公告)日:2014-09-18

    申请号:US13897031

    申请日:2013-05-17

    Abstract: Embodiments of the present disclosure include methods of forming a semiconductor device. An embodiment is a method for forming a semiconductor device, the method including applying a substrate to a carrier with an adhesive layer between the carrier and the substrate, curing a portion of the adhesive layer, the cured portion surrounding an uncured portion of the adhesive layer, removing the carrier from adhesive layer, removing the uncured portion of the adhesive layer, and removing the cured portion of the adhesive layer.

    Abstract translation: 本公开的实施例包括形成半导体器件的方法。 一个实施方案是一种形成半导体器件的方法,该方法包括将载体与载体和基片之间的粘合层施加到载体上,固化粘合剂层的一部分,围绕粘合剂层的未固化部分的固化部分 从粘合层去除载体,除去粘合剂层的未固化部分,以及去除粘合剂层的固化部分。

    Selective curing method of adhesive on substrate
    7.
    发明授权
    Selective curing method of adhesive on substrate 有权
    基材上粘合剂的选择性固化方法

    公开(公告)号:US09093489B2

    公开(公告)日:2015-07-28

    申请号:US13897031

    申请日:2013-05-17

    Abstract: Embodiments of the present disclosure include methods of forming a semiconductor device. An embodiment is a method for forming a semiconductor device, the method including applying a substrate to a carrier with an adhesive layer between the carrier and the substrate, curing a portion of the adhesive layer, the cured portion surrounding an uncured portion of the adhesive layer, removing the carrier from adhesive layer, removing the uncured portion of the adhesive layer, and removing the cured portion of the adhesive layer.

    Abstract translation: 本公开的实施例包括形成半导体器件的方法。 一个实施方案是一种形成半导体器件的方法,该方法包括将载体与载体和基片之间的粘合层施加到载体上,固化粘合剂层的一部分,围绕粘合剂层的未固化部分的固化部分 从粘合层去除载体,除去粘合剂层的未固化部分,以及去除粘合剂层的固化部分。

    Wafer debonding and cleaning apparatus and method

    公开(公告)号:US10381254B2

    公开(公告)日:2019-08-13

    申请号:US14479806

    申请日:2014-09-08

    Abstract: A wafer debonding and cleaning apparatus comprises a wafer debonding module configured to separate a semiconductor wafer from a carrier wafer. The wafer debonding and cleaning apparatus also comprises a first wafer cleaning module configured perform a first cleaning process to clean a surface of the semiconductor wafer. The wafer debonding and cleaning apparatus further comprises an automatic wafer handling module configured to transfer the semiconductor wafer from one of the wafer debonding module or the first wafer cleaning module to the other of the wafer debonding module or the first wafer cleaning module. The semiconductor wafer has a thickness ranging from about 0.20 μm to about 3 mm.

Patent Agency Ranking