Dielectric thin film, dielectric element and electronic circuit board

    公开(公告)号:US11453615B2

    公开(公告)日:2022-09-27

    申请号:US17189859

    申请日:2021-03-02

    Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

    Piezoelectric ceramic comprising an oxide and piezoelectric device
    7.
    发明授权
    Piezoelectric ceramic comprising an oxide and piezoelectric device 有权
    包含氧化物和压电装置的压电陶瓷

    公开(公告)号:US09105845B2

    公开(公告)日:2015-08-11

    申请号:US13712426

    申请日:2012-12-12

    Abstract: A piezoelectric ceramic with environmental friendliness including a composition as the main component composed of a composite oxide free from lead (Pb) as a constituent element, and with excellent piezoelectric characteristics such as the relative dielectric constant, the electromechanical coupling factor, and the piezoelectric constant, and a piezoelectric device using the piezoelectric ceramic, are provided. A piezoelectric ceramic including a composition represented by the following general formula as the main component: (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTaz-Zru)O3 (wherein, x, y, z, w, v, u and m in the formula satisfy the following conditions respectively: 0.4

    Abstract translation: 一种具有环境友好性的压电陶瓷,其包含作为主要成分的组合物,其由不含铅(Pb)作为构成元素的复合氧化物组成,并且具有优异的压电特性,例如相对介电常数,机电耦合系数和压电常数 ,以及使用该压电陶瓷的压电元件。 包含由以下通式表示的组合物作为主要成分的压电陶瓷:(K1-xyw-vNaxLiyBawSrv)m(Nb1-z-uTaz-Zru)O3(其中,x,y,z,w,v,u和 m分别满足以下条件:0.4

    Dielectric film, dielectric element, and electronic circuit board

    公开(公告)号:US11462339B2

    公开(公告)日:2022-10-04

    申请号:US16702280

    申请日:2019-12-03

    Abstract: A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

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