Abstract:
To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-δNδ, in which 0.15
Abstract:
A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.
Abstract:
The present invention relates to a dielectric ceramic composition which is complex oxides represented by the following formula (1), {[(BisNat)a(BiuKv)bBac]1-dAd}xTi1-dNbdO3 (1), wherein, in formula (1), A represents at least one element selected from the group consisting of Li, Na and K, and a, b, c, d, s, t, u, v and x are numbers respectively satisfying the following formulae, 0.10≦a≦0.95, 0.00
Abstract:
To provide a dielectric ceramic composition having a high dielectric constant, i.e., 3,000 or more, at elevated temperatures at or above 150° C. and having a practically sufficient relative dielectric constant at an applied DC electric field of 2 V/μm, and to provide a dielectric device including such a dielectric ceramic composition, a dielectric ceramic composition is a composite oxide represented by formula (1): {[(BisNat)a(BiuKv)bBac]1-dNad}xTi1-dNbdO3 (1) where a, b, c, d, s, t, u, v, and x are numbers satisfying the following conditions: 0.20≦a (0.80−a)/2 a+b+c=1 0.02≦d
Abstract translation:为了提供具有高介电常数(即3,000或更高)的介电陶瓷组合物,在升高的温度或高于150℃,并且在施加的2V /μm的直流电场下具有实际上足够的相对介电常数,并且 提供包括这种电介质陶瓷组合物的电介质器件,介电陶瓷组合物是由式(1)表示的复合氧化物:{[(BisNat)a(BiuKv)bBac] 1-dNad} xTi1-dNbdO3(1)其中a, b,c,d,s,t,u,v和x是满足以下条件的数字:0.20&nlE; a <0.95 0.00 (0.80-a)/ 2 a + b + c = 1 0.02&nlE; d <0.10 0.90&lt; lE; s + u&nlE; 1.00 0.45&nlE; t&nlE; 0.50 0.45 &nlE; v&nlE; 0.50 0.95&nlE; x&nlE; 1.05
Abstract:
A composite structure including a conductor region that is configured from a first oxide, and an insulator region that is configured from a second oxide and that surrounds the conductor region, wherein the first oxide and the second oxide are in hetero structure with each other. A powder and a fired body each having such a composite structure are also preferable.
Abstract:
A thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and a large-capacity thin-film capacitor element using the thin-film dielectric, in which a BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant; also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.
Abstract:
A piezoelectric ceramic with environmental friendliness including a composition as the main component composed of a composite oxide free from lead (Pb) as a constituent element, and with excellent piezoelectric characteristics such as the relative dielectric constant, the electromechanical coupling factor, and the piezoelectric constant, and a piezoelectric device using the piezoelectric ceramic, are provided. A piezoelectric ceramic including a composition represented by the following general formula as the main component: (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTaz-Zru)O3 (wherein, x, y, z, w, v, u and m in the formula satisfy the following conditions respectively: 0.4
Abstract:
A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.
Abstract:
The present invention aims to provide an excellent piezoelectric composition and an excellent piezoelectric element if the piezoelectric properties especially a high spontaneous polarization and a sufficiently high resistivity, the low pollution, the environment and the ecology are considered. In the piezoelectric composition, the main component contains the substance represented by the following formula with a perovskite-typed structure, (Bi(0.5x+y+z)Na0.5x)m(Tix+0.5yMg0.5yAlz)O3. Wherein, 0.01≦x≦0.8, 0.2≦y≦0.8, 0.01≦z≦0.6, 0.75≦m≦1.0, and x+y+z=1.
Abstract:
A piezoelectric compound having no occurrence of segregation or uneven structures as well as a piezoelectric element having excellent piezoelectric properties. The piezoelectric composition includes a main component that is a perovskite-typed oxide represented by formula of ABO3, wherein, one site includes Bi, Na, and another site includes Ti, and part of the Ti is substituted by transition metal element Me (Me is at least one element selected from the group consisting of Mn, Cr, Fe and Co), according to the conversion of BiMeO3, the content ratio of Bi and the transition metal element Me accounts for 6˜43 mol % relative to the whole perovskite-typed oxides as the main component.