公开(公告)号：US20130189423A1

公开(公告)日：2013-07-25

申请号：US13556193

申请日：2012-07-23

申请人： Tadahiro OHMI ,  Shozo Nakayama ,  Hironori Ito

发明人： Tadahiro OHMI ,  Shozo Nakayama ,  Hironori Ito

IPC分类号： C23C16/44

CPC分类号： C23C16/44 ,  C23C14/12 ,  C23C14/228 ,  C23C14/243 ,  C23C14/56 ,  C23C14/562 ,  H01L51/0008 ,  H01L51/56

摘要： Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V (%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e−Ea/kT wherein Ko represents a constant (%·Torr), P represents a pressure (Torr), Ea represents an activation energy (eV), k represents a Boltzmann constant, and T represents an absolute temperature.

摘要翻译： 公开了一种用于预测有机EL原料的薄膜材料的方法。 在该方法中，可以基于常数（Ko）和活化能（Ea）的值来预测具有由下式表示的蒸发速率（V（％））的膜材料。 V =（Ko / P）×e-Ea / kT其中Ko表示常数（％·Torr），P表示压力（Torr），Ea表示活化能（eV），k表示玻尔兹曼常数，T表示 绝对温度。

公开(公告)号：US20110268870A1

公开(公告)日：2011-11-03

申请号：US13101792

申请日：2011-05-05

申请人： Tadahiro OHMI ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

发明人： Tadahiro OHMI ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

IPC分类号： B05D5/12

CPC分类号： C23C14/564 ,  C23C14/12 ,  C23C14/228 ,  C23C14/24 ,  H01L51/0008 ,  H01L51/0081 ,  H01L51/56

摘要： In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel.

摘要翻译： 在用于成膜的装置中，有机EL分子气体被喷射到喷射容器中，多个有机EL材料容器与用于将多个有机EL材料容器连接到喷射容器的管道系统一起提供。 多个有机EL材料容器选择性地进入有机EL分子的供给状态。 管道系统被构造成使得载气以这样的方式被供给到每个有机EL材料容器中，使得成膜期间的压力和非成膜期间的压力彼此相等。 在非成膜期间，允许载气从有机EL材料容器之一流动到其他材料容器。

公开(公告)号：US20130017686A1

公开(公告)日：2013-01-17

申请号：US13620497

申请日：2012-09-14

申请人： Tadahiro OHMI ,  Kazuhide INO ,  Takahiro ARAKAWA

发明人： Tadahiro OHMI ,  Kazuhide INO ,  Takahiro ARAKAWA

IPC分类号： H01L21/3065 ,  C23C16/511

CPC分类号： H01L22/10 ,  H01J37/32192 ,  H01L21/67017 ,  H01L21/67069

摘要： A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4≦D≦1.3×n/4 (n being a natural number).

摘要翻译： 一种等离子体处理装置，用于使用等离子体处理待处理物体。 该装置包括：处理室，其限定用于容纳待处理物体和处理气体的处理腔;微波辐射天线，具有用于辐射微波的微波辐射表面，以激发处理空腔中的等离子;以及电介质 本体设置为与微波辐射表面相对，其中以微波的波长表示的微波辐射表面和远离微波辐射表面的电介质体的表面之间的距离D为距离 单位确定在满足不等式0.7×n / 4＆nlE; D＆nlE; 1.3×n / 4（n为自然数）的范围内。

公开(公告)号：US20120292743A1

公开(公告)日：2012-11-22

申请号：US13565868

申请日：2012-08-03

申请人： Tadahiro OHMI ,  Akinobu TERAMOTO ,  Tomoyuki SUWA

发明人： Tadahiro OHMI ,  Akinobu TERAMOTO ,  Tomoyuki SUWA

IPC分类号： F27B9/00 ,  H01L29/06 ,  F26B7/00

CPC分类号： H01L21/3247 ,  F27B17/0025 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/302 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67757

摘要： In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

摘要翻译： 在具有分别通过单原子层阶梯逐步形成的多个台阶的表面的硅晶片中，不形成滑移线。

公开(公告)号：US20120237684A1

公开(公告)日：2012-09-20

申请号：US13465665

申请日：2012-05-07

申请人： Tadahiro OHMI ,  Naoki Tanahashi ,  Keiichi Nii

发明人： Tadahiro OHMI ,  Naoki Tanahashi ,  Keiichi Nii

IPC分类号： B05D3/04

CPC分类号： C08J7/126 ,  C08J2365/00 ,  Y10T428/24612 ,  Y10T428/24628 ,  Y10T428/31504 ,  Y10T428/31855

摘要： A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved.

摘要翻译： 将例如烃类透明聚合物成型体的塑料部件在反应装置8内的氟气中进行氟化处理，仅氟化其表面层。 因此，可以降低折射率，可以降低表面反射，并且可以提高基材的透光率。

公开(公告)号：US20120211465A1

公开(公告)日：2012-08-23

申请号：US13459628

申请日：2012-04-30

申请人： Akihiro SATO ,  Masahiro SASAKI ,  Tadahiro OHMI ,  Akihiro MORIMOTO

发明人： Akihiro SATO ,  Masahiro SASAKI ,  Tadahiro OHMI ,  Akihiro MORIMOTO

IPC分类号： H05K3/00 ,  B32B37/14 ,  B32B38/08 ,  B32B38/10

CPC分类号： H05K3/4691 ,  C23F1/02 ,  C23F1/18 ,  C23F4/00 ,  C23F4/04 ,  H05K3/064 ,  H05K3/243 ,  H05K3/4652 ,  H05K2201/09736 ,  H05K2203/0369 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T156/10

摘要： A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness “tf” of the conductor layer on the base film formed in the flexible region and the average thickness “tR” of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf

摘要翻译： 提供柔性刚性印刷线路板，其可以保持柔性部分的柔性，同时增加柔性部分的折叠的耐久性，并且可以确保刚性部分中的导电性，以及制造印刷线路板的方法。 柔性刚性印刷电路板包括设置在基膜的至少一个面上的导体层，所述布线基板的一个区域包含基膜为刚性区域，另一区域包含基膜为柔性区域。 形成在柔性区域的基底膜上的导体层的平均厚度“tf”和形成在刚性区域中的基底膜上的导体层的平均厚度“tR”满足tf

公开(公告)号：US20120186638A1

公开(公告)日：2012-07-26

申请号：US13188848

申请日：2011-07-22

申请人： Tadahiro OHMI

发明人： Tadahiro OHMI

IPC分类号： H01L31/075

CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/052 ,  H01L31/075 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

摘要： Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n+-type a-Si layer is in contact with a transparent electrode formed by an n+-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.

摘要翻译： 提供一种具有由非晶硅形成的压区结构的光电转换元件，其通过n +型a-Si层与由n +型ZnO形成的透明电极接触的结构而提高能量转换效率 层。 这使得可以实现光电转换元件和具有大面积和大功率的太阳能电池模块或设备，从而影响全球资源的最小化。

公开(公告)号：US20130307404A1

公开(公告)日：2013-11-21

申请号：US13934488

申请日：2013-07-03

申请人： Tadahiro OHMI ,  Akihiro MORIMOTO

发明人： Tadahiro OHMI ,  Akihiro MORIMOTO

IPC分类号： H01J9/395 ,  H01J21/00

CPC分类号： H01J9/395 ,  H01J7/02 ,  H01J9/38 ,  H01J9/385 ,  H01J17/20 ,  H01J21/00 ,  H01J37/18 ,  H01J61/20 ,  H01J61/24

摘要： With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.

摘要翻译： 对于具有密封在其中的放电气体的减压容器的真空管，常规地发生诸如由于有机材料引起的排出效率降低，残留在减压容器中的水分或氧气的问题。 现在已经发现，选择水分子的数量，有机气体的分子数和残留在减压容器中的氧分子的数量与导致电气的气体的分子数的关系 放电允许通过上述剩余气体减少不利影响。 具体而言，选择上述放电气体的分子数为上述剩余气体的10倍以上的分子数量，可以减少上述剩余气体的不利影响。

公开(公告)号：US20120261802A1

公开(公告)日：2012-10-18

申请号：US13529574

申请日：2012-06-21

申请人： Tadahiro OHMI ,  Akihiro MORIMOTO

发明人： Tadahiro OHMI ,  Akihiro MORIMOTO

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/7813 ,  H01L21/84 ,  H01L27/12 ,  H01L29/045 ,  H01L29/41741 ,  H01L29/456 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/744 ,  H01L29/78603 ,  H01L2924/0002 ,  H05K1/053 ,  H01L2924/00

摘要： As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.

摘要翻译： 作为半导体装置的基板，使用金属基板，金属基板由第一金属制的金属基体和由覆盖金属基体的第二金属构成的连接金属层构成。 基板具有其中在连接金属层上设置防止第一金属扩散的扩散防止层的结构。

公开(公告)号：US20120187499A1

公开(公告)日：2012-07-26

申请号：US13079431

申请日：2011-04-04

申请人： Tadahiro OHMI ,  Hiroaki Tanaka

发明人： Tadahiro OHMI ,  Hiroaki Tanaka

IPC分类号： H01L27/092

CPC分类号： H01L21/823418 ,  H01L21/823814 ,  H01L21/84 ,  H01L27/1203

摘要： This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.

摘要翻译： 本发明提供了有利于提高集成电路的操作速度的技术。 在硅的（551）面形成有n型晶体管和p型晶体管的半导体器件中，与n型晶体管的扩散区域接触的硅化物层的厚度较小 比与p型晶体管的扩散区域接触的硅化物层的情况相同。