公开(公告)号：US07863178B2

公开(公告)日：2011-01-04

申请号：US10542485

申请日：2004-08-21

申请人： Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

发明人： Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

IPC分类号： H01L21/3205

CPC分类号： H01L33/007 ,  C23C16/303 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

摘要： The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.

摘要翻译： 本发明涉及一种通过新的p型AlGaInN：Mg生长方法制造的AlGaInN基光学器件及其制造方法，包括使用NH 3和肼基源生长的p型氮化物半导体层作为 氮前体，因此不需要附加的用于提取氢的退火方法，因此该方法简单，并且可以防止活性层被随后的退火热损伤。

公开(公告)号：US07244968B2

公开(公告)日：2007-07-17

申请号：US10559256

申请日：2004-06-03

申请人： Tae-Kyung Yoo

发明人： Tae-Kyung Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/882 ,  H01L33/06

摘要： The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P++-Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer and a N++-Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.

摘要翻译： 本发明提供具有低隧穿势垒的III族氮化物隧道结结构，其中Si层或III-V族化合物半导体In（a）Ga（b）Al（c）As（d）[N ] P（e）（0 <= a <= 1,0,0 <= b <= 1,0 <= c <= 1,0 <= d <= 1，0 <= e <= 1） 带隙比Al（x）Ga（y）In（z）N（0 <= x <=1,0,0≤y≤1,0<= z <= 1）的带隙，并且可以掺杂高 基于P +++（x）Ga（y）In（z）N（0≤x≤1,0<= y <1）将p的浓度插入到隧穿结中， = 1，0 <= z <= 1）层和平均值-Al（x）Ga（y）In（z）N（0≤x≤1,0<= y <= 1，0 <= z <= 1）层。 该隧道结结构对于制造高度可靠的超高速光电子器件将是有用的。

公开(公告)号：US20070001179A1

公开(公告)日：2007-01-04

申请号：US10544328

申请日：2005-06-28

申请人： Tae-Kyung Yoo ,  Eun Park

发明人： Tae-Kyung Yoo ,  Eun Park

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x≧0, y≧0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) of the hexagonal structure and SixCyNz(x≧0, y≧0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x≧0, y≧0, x+y>0, z>0) material.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，其中单层或多层由Si x Si x N z N z （x> = 0，y> = 0，x + y> 0，z> 0）插入到有源层中或下面，并且涉及一种技术，其中Al（x）Ga（y）In xy）N（0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）的六方结构和Si x x C y 根据Si = 0，y> = 0，x + y> 0，z> 0） （x> = 0，y> = 0，x + y> 0，z> 0）材料。

公开(公告)号：US08053793B2

公开(公告)日：2011-11-08

申请号：US12084198

申请日：2006-10-30

申请人： Eun Hyun Park ,  Tae-Kyung Yoo

发明人： Eun Hyun Park ,  Tae-Kyung Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/16 ,  H01L33/32

摘要： The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN.

摘要翻译： 本发明公开了一种III族氮化物化合物半导体发光器件，其包括通过电子与n型氮化物化合物半导体层和p型氮化物半导体层之间的空穴的复合产生光的有源层。 有源层配置在n型氮化物半导体层的上方。 III族氮化物化合物半导体发光器件包括由MgN制成并在p型氮化物半导体层上生长的掩模膜，以及在由MgN形成的掩模膜生长之后生长的至少一个氮化物半导体层。

公开(公告)号：US20090179211A1

公开(公告)日：2009-07-16

申请号：US11988882

申请日：2006-07-14

申请人： Tae-Kyung Yoo ,  Chang-Tae Kim ,  Keuk Kim

发明人： Tae-Kyung Yoo ,  Chang-Tae Kim ,  Keuk Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38

摘要： The present invention discloses a semiconductor light emitting device including an active layer for generating light by recombination of electron and hole between a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity different from the first conductivity, the second semiconductor layer being disposed on the active layer. The semiconductor light emitting device comprises first array including a trench having a first inclination angle, and second array including a trench having a second inclination angle different from the first inclination angle.

摘要翻译： 本发明公开了一种半导体发光器件，其包括通过电子和空穴之间的复合产生光的有源层，所述有源层在具有第一导电性的第一半导体层与具有不同于第一导电性的第二导电性的第二半导体层之间，第二半导体层被布置 在活动层。 半导体发光器件包括第一阵列，其包括具有第一倾斜角的沟槽，第二阵列包括具有不同于第一倾斜角的第二倾斜角的沟槽。

公开(公告)号：US20060261344A1

公开(公告)日：2006-11-23

申请号：US10544271

申请日：2005-03-04

申请人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Park ,  Soo Kun Jeon

发明人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Park ,  Soo Kun Jeon

IPC分类号： H01L31/0312

CPC分类号： H01L33/32

摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor. This makes the efficiency of the device degraded. According to the present invention, however, a SiaCbNc (a≧0,b>0,c≧0,a+c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor and a p-side electrode. Therefore, the present invention can solve the conventional problem.

摘要翻译： 本发明涉及包含多个III族氮化物半导体层的III族氮化物半导体发光器件，所述III族氮化物半导体层包括通过电子和空穴的复合发射光的有源层，所述多个III族氮化物半导体层具有p型III- （a> = 0，b> 0，c> = 0）的氮化物半导体层， ，a + c> 0）层，（a + c> 0）层（a（c​​ + > = 0，b> 0，c> = 0，a + c> 0）层，对于要注入到p型III族氮化物半导体中的空穴，具有n型导电性和厚度为5埃至500埃 （a> = 0，b> 0，...，b）上形成的p侧电极， c> = 0，a + c> 0）层。 通常，在III族氮化物半导体发光器件中，如果p侧电极直接形成在p型氮化物半导体上，则由于p型氮化物半导体的高能带隙和低掺杂效率而产生高接触电阻 。 这使得设备的效率降低。 然而，根据本发明，一个或更多个（a> = 0，b> 0，c> = 0） ，可以掺杂高浓度的a + c> 0）层介于p型氮化物半导体和p侧电极之间。 因此，本发明可以解决常规问题。

公开(公告)号：US07999270B2

公开(公告)日：2011-08-16

申请号：US12085150

申请日：2006-11-15

申请人： Eun Hyun Park ,  Tae-Kyung Yoo

发明人： Eun Hyun Park ,  Tae-Kyung Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  Y10S257/918

摘要： The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.

摘要翻译： 本发明公开了一种具有n型氮化物化合物半导体层的III族氮化物化合物半导体发光器件，在n型氮化物半导体层上生长的活性层，用于通过电子和空穴的复合产生光，以及p 型氮化物半导体层。 III族氮化物化合物半导体发光器件包括多个半导体层，包括在p型氮化物半导体层上生长的具有针孔结构的氮化物化合物半导体层。

公开(公告)号：US20090197397A1

公开(公告)日：2009-08-06

申请号：US12083266

申请日：2006-10-02

申请人： Eun-Hyun Park ,  Tae-Kyung Yoo

发明人： Eun-Hyun Park ,  Tae-Kyung Yoo

IPC分类号： H01L21/20

CPC分类号： H01L33/0079 ,  H01L31/03046 ,  H01L31/1844

摘要： The present invention discloses a method of manufacturing a semiconductor device including a plurality of semiconductor layers grown on a substrate and removing the substrate from the plurality of semiconductor layers. The method of manufacturing the semiconductor device comprises a first step for growing a III-nitride compound semiconductor layer between the substrate and the plurality of semiconductor layers, and a second step for removing the substrate by etching the III-nitride compound semiconductor layer.

摘要翻译： 本发明公开了一种制造半导体器件的方法，该半导体器件包括在衬底上生长的多个半导体层，并从多个半导体层去除衬底。 制造半导体器件的方法包括用于在衬底和多个半导体层之间生长III族氮化物化合物半导体层的第一步骤，以及通过蚀刻III族氮化物化合物半导体层去除衬底的第二步骤。

公开(公告)号：US20100032689A1

公开(公告)日：2010-02-11

申请号：US12085150

申请日：2006-11-15

申请人： Eun Hyun Park ,  Tae-Kyung Yoo

发明人： Eun Hyun Park ,  Tae-Kyung Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  Y10S257/918

摘要： The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.

摘要翻译： 本发明公开了一种具有n型氮化物化合物半导体层的III族氮化物化合物半导体发光器件，在n型氮化物半导体层上生长的活性层，用于通过电子和空穴的复合产生光，以及p 型氮化物半导体层。 III族氮化物化合物半导体发光器件包括多个半导体层，包括在p型氮化物半导体层上生长的具有针孔结构的氮化物化合物半导体层。

公开(公告)号：US07601553B2

公开(公告)日：2009-10-13

申请号：US10563269

申请日：2004-07-16

申请人： Tae-Kyung Yoo ,  Joong-Seo Park ,  Chang-Tae Kim

发明人： Tae-Kyung Yoo ,  Joong-Seo Park ,  Chang-Tae Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/32341 ,  H01S2304/04

摘要： The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semi-conductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.

摘要翻译： 本发明涉及一种氮化物半导体发光器件，其包括多个氮化物半导体层，其具有使用氮前体氨与肼基材料一起形成的p型氮化物半导体，肼基材料在热分解时产生与基团相结合的基团 氢自由基以消除氢根，从而不需要随后的用于除去氢的退火工艺，并防止活性层由于随后的退火工艺而被热损伤。