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    Fusing device and image forming apparatus having the same
    2.
    发明授权
    Fusing device and image forming apparatus having the same 有权
    定影装置和具有该定影装置的图像形成装置

    公开(公告)号：US07881650B2

    公开(公告)日：2011-02-01

    申请号：US12036514

    申请日：2008-02-25

    Applicant: Su-ho Shin ,  Dong-woo Lee ,  Tae-gyu Kim ,  Chang-hoon Jung ,  Tae-hoon Kim ,  Hwan-hee Kim

    Inventor： Su-ho Shin ,  Dong-woo Lee ,  Tae-gyu Kim ,  Chang-hoon Jung ,  Tae-hoon Kim ,  Hwan-hee Kim

    IPC: G03G15/20

    CPC classification number: G03G15/2064 ,  G03G2215/2035

    Abstract: A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.

    Abstract translation: 定影装置包括可旋转的加压辊，通过从可旋转的加压辊传递的旋转力而旋转的定影带，夹持形成构件，其与定影带的内表面接触，以在可旋转的压制 辊和定影带，形成在定影带的大致中心部分的加热构件，以加热夹持形成构件和定影带;形成在定影带内的内部支撑构件，以挤压辊隙形成构件的夹持部分 朝向可旋转的压辊，以及形成在定影带外部的外支撑构件，并且外支撑构件的两端与内支撑构件接合，从而增强内支撑构件的强度，并形成用于辐射热的路径 分散。 支撑单元包括放置在皮带单元内的内支撑构件和设置在皮带单元外部的外支撑构件，外支撑构件的两端与内支撑构件接合以增强内支撑构件的强度， 形成辐射热分散的路径。

    Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same
    4.
    发明授权
    Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same 有权
    具有高击穿电压，低导通电阻和小开关损耗的功率半导体器件及其形成方法

    公开(公告)号：US07276405B2

    公开(公告)日：2007-10-02

    申请号：US11182578

    申请日：2005-07-14

    Applicant: Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

    Inventor： Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

    IPC: H01L21/336

    CPC classification number: H01L29/7802 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7395

    Abstract: In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

    Abstract translation: 根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。 第一漂移区域具有比半导体衬底更低的杂质浓度。 第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。 第二导电类型的多个条形体区域形成在第二漂移区域的上部。 第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。 栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分 地区。

    DRIVER'S AIRBAG MODULE ASSEMBLY STRUCTURE
    5.
    发明申请
    DRIVER'S AIRBAG MODULE ASSEMBLY STRUCTURE 失效
    驾驶员安全气囊组件结构

    公开(公告)号：US20070132218A1

    公开(公告)日：2007-06-14

    申请号：US11551012

    申请日：2006-10-19

    Applicant: Tae-hoon Kim ,  Se-hwa Jeong

    Inventor： Tae-hoon Kim ,  Se-hwa Jeong

    IPC: B60R21/203 ,  B60R21/217

    CPC classification number: B60R21/2035 ,  B60R21/217

    Abstract: Provided is a driver's airbag module assembly structure including: an inflator for generating gas by igniting an exploder; an airbag inflated toward a driver by the gas generated by the inflator; a cage covering the inflator; a mounting plate for accommodating the inflator, the airbag, and the cage to be fixed in a cover member disposed at a handle; and a horn plate installed between the mounting plate and a steering wheel, characterized in that the mounting plate has a plurality of fixing clips formed at its outer surface, the cover member has a plurality of coupling holes coupled with the fixing clips, the horn plate is provided with a bracket having an angled tip and a fastening hole, and the steering wheel is provided with a groove having an angled step corresponding to the bracket of the horn plate. Therefore, hooks of a mounting plate push flexible pieces formed at coupling holes of a cover to allow the mounting plate and the cover to be easily coupled with each other. In addition, since the hooks are closely inserted into lower horizontal holes, movement of the hooks can be reduced. Further, the hooks do not separate from the coupling holes when the airbag is deployed.

    Abstract translation: 提供了一种驾驶员安全气囊模块组装结构，其包括：用于通过点燃爆炸物产生气体的充气机; 气囊通过由充气机产生的气体向驾驶员充气; 覆盖充气机的笼子; 用于容纳充气器，气囊和保持架的安装板，被固定在设置在手柄处的盖构件中; 以及安装在所述安装板和方向盘之间的喇叭板，其特征在于，所述安装板具有形成在其外表面的多个固定夹，所述盖构件具有与所述固定夹连接的多个联接孔，所述喇叭板 设置有具有倾斜尖端和紧固孔的支架，并且方向盘设置有具有对应于喇叭板的支架的成角度的台阶的槽。 因此，安装板的钩子推动形成在盖的联接孔处的柔性片，以允许安装板和盖彼此容易地联接。 此外，由于钩紧紧地插入下水平孔中，所以可以减小钩的运动。 此外，当安全气囊展开时，钩不与联接孔分离。

    Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same
    6.
    发明申请
    Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same 有权
    具有高击穿电压，低导通电阻和小开关损耗的功率半导体器件及其形成方法

    公开(公告)号：US20050263818A1

    公开(公告)日：2005-12-01

    申请号：US11182578

    申请日：2005-07-14

    Applicant: Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

    Inventor： Young-chul Choi ,  Tae-hoon Kim ,  Ho-cheol Jang ,  Chong-man Yun

    IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/94

    CPC classification number: H01L29/7802 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7395

    Abstract: In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

    Abstract translation: 根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。 第一漂移区域具有比半导体衬底更低的杂质浓度。 第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。 第二导电类型的多个条形体区域形成在第二漂移区域的上部。 第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。 栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分 地区。

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