公开(公告)号：US4089020A

公开(公告)日：1978-05-09

申请号：US677807

申请日：1976-04-16

申请人： Takahide Ikeda ,  Michio Ishikawa

发明人： Takahide Ikeda ,  Michio Ishikawa

IPC分类号： H01L21/265 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L29/48 ,  H01L29/56 ,  H01L29/64

CPC分类号： H01L21/26513 ,  H01L29/872

摘要： A semiconductor diode consists of a low resistivity n conductivity type semiconductor substrate, a high resistivity n conductivity type semiconductor layer, formed on the surface of the substrate, a high resistivity p conductivity type semiconductor layer, whose thickness is smaller than the diffusion length of electrons, formed on the n conductivity type layer, a metal electrode forming a Schottky barrier contact with the p conductivity type layer, and an electrode forming an ohmic contact with the substrate.

摘要翻译： 半导体二极管由形成在基板表面上的低电阻率n导电型半导体基板，高电阻率n导电型半导体层，厚度小于电子扩散长度的高电阻率p导电型半导体层构成 形成在n导电型层上的金属电极，与p导电型层形成肖特基势垒接触的金属电极，以及与基板形成欧姆接触的电极。

公开(公告)号：US09059105B2

公开(公告)日：2015-06-16

申请号：US12442834

申请日：2007-12-26

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31138 ,  H01J37/3244

摘要： Disclosed is an ashing apparatus and its method of manufacture wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

摘要翻译： 公开了一种灰化装置及其制造方法，其中抑制了加工效率的降低。 具体而言，将淋浴板配置成面对放置有基板的基板台，并使供给到室内的氧自由基扩散。 金属阻挡板布置在淋浴板和衬底台之间，并且具有氧自由基通过的通孔。 此外，金属阻挡板具有在与基板相对的表面上由与基板中露出的金属相同的金属制成的第一层。

公开(公告)号：US08125069B2

公开(公告)日：2012-02-28

申请号：US12830995

申请日：2010-07-06

申请人： Toshio Hayashi ,  Yasuhiro Morikawa ,  Michio Ishikawa ,  Yuji Furumura ,  Naomi Mura

发明人： Toshio Hayashi ,  Yasuhiro Morikawa ,  Michio Ishikawa ,  Yuji Furumura ,  Naomi Mura

IPC分类号： H01L23/48

CPC分类号： H01L21/31116 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.

摘要翻译： 一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的 具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。 这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。 所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。

公开(公告)号：US20100089533A1

公开(公告)日：2010-04-15

申请号：US12442834

申请日：2007-12-26

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01J37/3244

摘要： Disclosed is an ashing apparatus wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

摘要翻译： 公开了一种抑制加工效率降低的灰化装置。 具体而言，将淋浴板配置成面对放置有基板的基板台，并使供给到室内的氧自由基扩散。 金属阻挡板布置在淋浴板和衬底台之间，并且具有氧自由基通过的通孔。 此外，金属阻挡板具有在与基板相对的表面上由与基板中露出的金属相同的金属制成的第一层。

公开(公告)号：US20100068891A1

公开(公告)日：2010-03-18

申请号：US12447533

申请日：2007-11-08

申请人： Masanobu Hatanaka ,  Michio Ishikawa ,  Kanako Tsumagari

发明人： Masanobu Hatanaka ,  Michio Ishikawa ,  Kanako Tsumagari

IPC分类号： H01L21/46

CPC分类号： C23C16/38 ,  C23C16/30 ,  C23C16/4554 ,  C23C16/45555 ,  C23C16/45565 ,  H01L21/28562 ,  H01L21/76843

摘要： A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.

摘要翻译： 由ZrB2膜制成的阻挡膜通过使用具有等离子体产生装置的涂覆装置形成，所述等离子体产生装置包括同轴谐振腔和用于激发同轴谐振腔的微波供应电路，所述同轴谐振腔包括设置在周边周围的间隔开的导体 的用于反应气体引入的非金属管，所述同轴谐振腔的内部高度等于所述激发波长的二分之一的整数倍，所述等离子体产生装置被构造成使得从所述非金属管的一端注入的气体为 当气体处于不被导体覆盖的非金属管的区域中并且等离子体状态的气体从非金属管的另一端排放时，通过微波激发成等离子体状态。

公开(公告)号：US5840374A

公开(公告)日：1998-11-24

申请号：US661500

申请日：1996-06-11

申请人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

发明人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

IPC分类号： C23C16/40 ,  B05D3/06 ,  C23C16/22

CPC分类号： C23C16/401

摘要： An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.

摘要翻译： 通过等离子体化学气相沉积（CVD）工艺在由塑料材料制成的衬底的表面上形成SiO 2钝化膜，其中使用有机氧化硅作为原料气体。 代替具有灰化效应的反应气体，使用Ar，He或NH 3作为反应气体，其用作在不高于基底热变形的温度（即，约 250℃）。 因此防止了氧或氢自由基对衬底的灰化。

公开(公告)号：US5288329A

公开(公告)日：1994-02-22

申请号：US616106

申请日：1990-11-20

申请人： Kyuzo Nakamura ,  Michio Ishikawa ,  Kazuyuki Ito ,  Noriaki Tani ,  Masanori Hashimoto ,  Yoshifumi Ota

发明人： Kyuzo Nakamura ,  Michio Ishikawa ,  Kazuyuki Ito ,  Noriaki Tani ,  Masanori Hashimoto ,  Yoshifumi Ota

IPC分类号： C23C16/44 ,  C23C16/02 ,  C23C16/50 ,  C23C16/54 ,  C23F4/00 ,  H01L21/205 ,  H01L21/31 ,  H01L21/00

CPC分类号： C23C16/54 ,  C23C16/0245

摘要： An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.

摘要翻译： 一种在线型化学气相沉积装置，具有用于清洁至少基板保持件的蚀刻装置，该蚀刻装置设置在基板卸载站的下游，其中处理的基板在大气压力下从基板保持器移除。 蚀刻装置包括等离子体蚀刻装置，其中衬底保持器位于阳极侧或干蚀刻装置，其中衬底保持器位于阴极侧，从而减少装置的停机时间而不受任何影响 附着膜从基板保持器或其他部分剥离。

公开(公告)号：US5198309A

公开(公告)日：1993-03-30

申请号：US89022

申请日：1987-08-24

申请人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani

发明人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani

IPC分类号： G11B5/64 ,  G11B5/706

CPC分类号： G11B5/70621 ,  G11B5/64 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12847 ,  Y10T428/12854 ,  Y10T428/12861

摘要： An improved magnetic recording member comprising a magnetic metallic film having the composition Co.sub.x Cr.sub.y Ni.sub.z wherein x, y, and z are atomic ratios and 0.45.ltoreq.x

摘要翻译： 一种改进的磁记录元件，包括具有组成CoxCryNiz的磁性金属膜，其中x，y和z是原子比，0.45

公开(公告)号：US5123163A

公开(公告)日：1992-06-23

申请号：US510208

申请日：1990-04-17

申请人： Michio Ishikawa ,  Toshio Ohkubo ,  Yasuhiro Otsuka

发明人： Michio Ishikawa ,  Toshio Ohkubo ,  Yasuhiro Otsuka

IPC分类号： H01L21/00 ,  H01L21/48

CPC分类号： H01L21/67132 ,  H01L21/4842 ,  Y10T29/49121 ,  Y10T29/5193 ,  Y10T29/53078

摘要： A film carrier is used for fabricating a semiconductor device, and comprises an insulating film and a plurality of conductive leads each extending on the insulating film and having a front side surface and a reverse side surface, and a bump is formed in each of the conductive leads and has a projecting surface projecting from the reverse side surface and a depressed surface defining a recess open to the front side surface, so that the bump has a dome-shaped configuration and is much liable to deform in a thermocompression bonding stage.

摘要翻译： 膜载体用于制造半导体器件，并且包括绝缘膜和多个导电引线，每个导电引线在绝缘膜上延伸并具有前侧表面和反侧表面，并且在每个导电 引线并且具有从背面突出的突出表面和限定向前侧表面开口的凹部的凹陷表面，使得凸块具有圆顶形构造，并且在热压接阶段中容易变形。

公开(公告)号：US20100317189A1

公开(公告)日：2010-12-16

申请号：US12676322

申请日：2008-09-03

申请人： Hideaki Zama ,  Michio Ishikawa ,  Takumi Kadota ,  Chihiro Hasegawa

发明人： Hideaki Zama ,  Michio Ishikawa ,  Takumi Kadota ,  Chihiro Hasegawa

IPC分类号： H01L21/768

CPC分类号： C23C16/18 ,  C23C16/045 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L29/7833

摘要： Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件具有降低含有含钌膜和含铜膜的铜布线的电阻，从而提高了可靠性。 还公开了一种用于制造半导体器件的装置。 具体地说，通过使用含有由通式表示的有机钌络合物和还原气体的原料的CVD法，在具有凹部的基板上形成Ru膜（步骤S12）。 然后，通过CVD法使用含有通式表示的有机铜络合物的原料和还原气体在Ru膜上形成Cu膜，从而在凹陷部中形成含有Ru膜和Cu膜的铜布线 部分（步骤S14）。