公开(公告)号：US09059105B2

公开(公告)日：2015-06-16

申请号：US12442834

申请日：2007-12-26

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31138 ,  H01J37/3244

摘要： Disclosed is an ashing apparatus and its method of manufacture wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

摘要翻译： 公开了一种灰化装置及其制造方法，其中抑制了加工效率的降低。 具体而言，将淋浴板配置成面对放置有基板的基板台，并使供给到室内的氧自由基扩散。 金属阻挡板布置在淋浴板和衬底台之间，并且具有氧自由基通过的通孔。 此外，金属阻挡板具有在与基板相对的表面上由与基板中露出的金属相同的金属制成的第一层。

公开(公告)号：US20100089533A1

公开(公告)日：2010-04-15

申请号：US12442834

申请日：2007-12-26

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Michio Ishikawa ,  Koukou Suu ,  Toshiya Yogo

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01J37/3244

摘要： Disclosed is an ashing apparatus wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

摘要翻译： 公开了一种抑制加工效率降低的灰化装置。 具体而言，将淋浴板配置成面对放置有基板的基板台，并使供给到室内的氧自由基扩散。 金属阻挡板布置在淋浴板和衬底台之间，并且具有氧自由基通过的通孔。 此外，金属阻挡板具有在与基板相对的表面上由与基板中露出的金属相同的金属制成的第一层。

公开(公告)号：US20100193131A1

公开(公告)日：2010-08-05

申请号：US12443912

申请日：2008-10-29

申请人： Masahisa Ueda ,  Takashi Kurimoto ,  Kyuzo Nakamura ,  Koukou Suu ,  Toshiya Yogo ,  Kazushige Komatsu ,  Nobusuke Tachibana

发明人： Masahisa Ueda ,  Takashi Kurimoto ,  Kyuzo Nakamura ,  Koukou Suu ,  Toshiya Yogo ,  Kazushige Komatsu ,  Nobusuke Tachibana

IPC分类号： C23F1/08

CPC分类号： H01L21/02068 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32467 ,  H01J37/32477 ,  H01L21/31138

摘要： An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

摘要翻译： 灰化装置可防止灰度随时间变化。 灰化装置在包括处理室中的暴露金属的基板上灰化有机材料。 灰化装置包括形成在处理室中并通过其提供给处理室的活性物质通过的路径。 该路径由其上由活性物质从衬底散射的金属可收集的表面限定，其表面被形成以暴露同一种类的金属。

公开(公告)号：US20100213170A1

公开(公告)日：2010-08-26

申请号：US12597602

申请日：2008-06-19

申请人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

发明人： Yutaka Kokaze ,  Mitsuhiro Endou ,  Masahisa Ueda ,  Koukou Suu ,  Toshiya Miyazaki ,  Toshiyuki Nakamura

IPC分类号： C23F4/00

CPC分类号： H01L21/68735 ,  C23F4/00 ,  G11C11/22 ,  H01J37/321 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/3266 ,  H01J2237/022 ,  H01J2237/2001 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11507 ,  H01L27/1159

摘要： An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.5 or more

摘要翻译： 一种蚀刻方法，其使用具有其中蚀刻气体被等离子体激发的室的装置; 设置在所述室中的加热安装在其上的基板的台; 以及框架构件，其包括布置在工作台周围的耐腐蚀材料，并且具有布置在比工作台的上表面低的位置的上表面，所述蚀刻方法包括：将所述衬底布置在所述衬底的上表面上 使得基板的周边部分在工作台上方突出; 以及将所述基板从所述框架构件的上表面的高度与所述基板的底面的高度与从所述台的侧面到所述基板的外周的突出长度的比例设定为1.5以上

公开(公告)号：US20080026539A1

公开(公告)日：2008-01-31

申请号：US11878172

申请日：2007-07-20

申请人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endo ,  Koukou Suu

发明人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endo ,  Koukou Suu

IPC分类号： H01L21/20

CPC分类号： H01L21/31138 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

摘要： An etching technique suitable for miniaturization is provided. An inorganic film is formed on an object to be subjected, the object having a lower electrode film, a dielectric film, and an upper electrode film laminated in that order on a substrate. A patterned organic resist film is disposed on the surface of the inorganic film. The inorganic film, upper electrode film, and the dielectric film are etched using the organic resist film as a mask, and then, the organic resist film is removed with the gas used to etch the lower electrode film; and the lower electrode film is etched using the inorganic film as a mask that has been exposed. Since the film serving as a mask is not re-formed, a fine pattern can be produced with good precision.

摘要翻译： 提供适合于小型化的蚀刻技术。 在被处理物上形成无机膜，该物体在基板上依次层叠有下电极膜，电介质膜和上电极膜。 图案化的有机抗蚀剂膜设置在无机膜的表面上。 使用有机抗蚀剂膜作为掩模来蚀刻无机膜，上电极膜和电介质膜，然后用用于蚀刻下电极膜的气体去除有机抗蚀剂膜; 使用无机膜作为已曝光的掩模来蚀刻下部电极膜。 由于不会重新形成用作掩模的膜，因此可以以高精度制造精细图案。

公开(公告)号：US20100151150A1

公开(公告)日：2010-06-17

申请号：US12600650

申请日：2008-05-14

申请人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endou ,  Koukou Suu ,  Toshiya Miyazaki ,  Genji Sakata ,  Toshiyuki Nakamura

发明人： Yutaka Kokaze ,  Masahisa Ueda ,  Mitsuhiro Endou ,  Koukou Suu ,  Toshiya Miyazaki ,  Genji Sakata ,  Toshiyuki Nakamura

IPC分类号： C23C16/513

CPC分类号： H01J37/32467 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32568

摘要： A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.

摘要翻译： 本发明的等离子体处理装置对待处理的基板，用贵金属材料和铁电体材料的等离子体处理进行处理，并且在加热时设置有暴露于等离子体的构成部件。 该构成部件由至少99％的铝纯度的铝合金形成。

公开(公告)号：US20100083981A1

公开(公告)日：2010-04-08

申请号：US12598081

申请日：2008-05-28

申请人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

发明人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

IPC分类号： B08B6/00

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/32862 ,  Y10S428/905

摘要： This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

摘要翻译： 等离子体处理装置的干式清洗方法是等离子体处理装置的干式清洗方法，其特征在于，包括：设置有电介质部件的真空容器; 设置在电介质构件外部的平面电极和高频天线; 以及向高频天线和平面电极提供高频电力的高频电源，从而通过电介质构件将高频电力引入真空容器，并产生电感耦合等离子体，该方法 包括以下步骤：将包含氟的气体引入真空容器，并将高频电力从高频电源引入真空容器中，从而在包括氟的气体中产生电感耦合等离子体; 并且通过使用电感耦合等离子体，去除包括粘附到电介质构件的贵金属和铁电体中的至少一种的产品。

公开(公告)号：US08133325B2

公开(公告)日：2012-03-13

申请号：US12598081

申请日：2008-05-28

申请人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

发明人： Masahisa Ueda ,  Yutaka Kokaze ,  Mitsuhiro Endou ,  Koukou Suu

IPC分类号： C25F1/00

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/32862 ,  Y10S428/905

摘要： This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

摘要翻译： 等离子体处理装置的干式清洗方法是等离子体处理装置的干式清洗方法，其特征在于，包括：设置有电介质部件的真空容器; 设置在电介质构件外部的平面电极和高频天线; 以及向高频天线和平面电极提供高频电力的高频电源，从而通过电介质构件将高频电力引入真空容器，并产生电感耦合等离子体，该方法 包括以下步骤：将包含氟的气体引入真空容器，并将高频电力从高频电源引入真空容器中，从而在包括氟的气体中产生电感耦合等离子体; 并且通过使用电感耦合等离子体，去除包括粘附到电介质构件的贵金属和铁电体中的至少一种的产品。

公开(公告)号：US09305752B2

公开(公告)日：2016-04-05

申请号：US13414953

申请日：2012-03-08

申请人： Yutaka Kokaze ,  Masahisa Ueda ,  Yoshiaki Yoshida

发明人： Yutaka Kokaze ,  Masahisa Ueda ,  Yoshiaki Yoshida

IPC分类号： B44C1/22 ,  H01J37/32 ,  H01L21/3213

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/32136

摘要： A method for operating a substrate processing apparatus is provided which can contain generation of particles by generating plasma in a stable manner. After a substrate is disposed in an evacuated vacuum chamber, a rare gas is initially supplied into the vacuum chamber, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Subsequently, a reaction gas is supplied into the vacuum chamber, the reaction gas is brought into contact with the plasma of the rare gas, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate; and the substrate is processed. Plasma is stably generated not by turning the reaction gas into plasma but by first turning the rare gas into plasma by the plasma generating means, and generation of particles is subsequently suppressed.

摘要翻译： 提供了一种用于操作基板处理装置的方法，其可以通过以稳定的方式产生等离子体来包含颗粒的产生。 将基板设置在真空室内后，最初向真空室供给稀有气体，向等离子体发生装置施加电压，产生稀有气体的等离子体。 随后，将反应气体供给到真空室中，使反应气体与稀有气体的等离子体接触，产生反应气体的等离子体。 使反应气体的等离子体与基板接触; 并处理基板。 等离子体不是通过将反应气体转化为等离子体而是通过等离子体产生装置首先将稀有气体转化成等离子体而稳定地产生的，随后抑制了颗粒的产生。

公开(公告)号：US06495413B2

公开(公告)日：2002-12-17

申请号：US09797394

申请日：2001-02-28

申请人： Shan Sun ,  George Hickert ,  Diana Johnson ,  John Ortega ,  Eric Dale ,  Masahisa Ueda

发明人： Shan Sun ,  George Hickert ,  Diana Johnson ,  John Ortega ,  Eric Dale ,  Masahisa Ueda

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32139

摘要： A method for fabricating integrated capacitors, of particular utility in forming a ferroelectric capacitor array for a ferroelectric memory integrated circuits, begins with provision of a substrate. The substrate is typically a partially-processed CMOS integrated circuit wafer coated with an adhesion layer. Upon the substrate is deposited a bottom electrode layer, typically of noble metal, a dielectric layer, typically doped PZT, and a top electrode layer, typically a noble metal oxide. Next is deposited a hardmask layer of strontium ruthenium oxide, followed by a photoresist layer. The photoresist layer is aligned, exposed, developed, and cured as known in the art of integrated circuit photolithography. The resulting stack is then dry etched to remove undesired portions of the hardmask layer, the top electrode layer, and the dielectric layer. A principle advantage of the process is that a single photomasking operation is sufficient to define the top electrode and dielectric layers.

摘要翻译： 在形成用于铁电存储器集成电路的铁电电容器阵列特别有用的集成电容器的制造方法开始于提供衬底。 衬底通常是涂覆有粘合层的部分处理的CMOS集成电路晶片。 在衬底沉积通常为贵金属的底部电极层，通常为掺杂PZT的电介质层和通常为贵金属氧化物的顶部电极层。 接下来沉积氧化钌的硬掩模层，随后是光致抗蚀剂层。 如在集成电路光刻技术中已知的那样，光刻胶层被对准，曝光，显影和固化。 然后将所得到的堆叠干法蚀刻以去除硬掩模层，顶部电极层和电介质层的不期望的部分。 该方法的主要优点是单个光掩模操作足以限定顶部电极和电介质层。