摘要:
An infrared detector includes an optical cavity structure with an infrared reflection film on a semiconductor substrate. The infrared reflection film and an infrared absorption film provide high efficiency infrared detection.
摘要:
A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.
摘要:
This invention provides flavivirus vaccines that comprise live-attenuated flaviviruses and methods of making and using these vaccines. The flavivirus vaccines described herein possess higher potency due to in situ production of additional immunogens in a way that mimics viral infection and the vaccines have potential for higher potency, reducing costs for production and delivery.
摘要:
A method and apparatus are provided for correcting burn-in in a flat screen display. The method includes the steps of determining a maximum cumulative luminance of each pixel (15) within the display (14) based upon a usage of the pixel, providing a modulation map (40) of the display (14) from the maximum cumulative luminance of each pixel (15) within the display (14), transforming the modulation map (40) based upon the maximum cumulative luminance of groups of adjacent pixels to provide a modulation index for each pixel location of the map (40), comparing the modulation indexes with a set of threshold values and adjusting a luminosity of associated pixels (15) of the display (40) when the modulation index exceeds the threshold.
摘要:
An electronic device (200) includes a display (202) and an LC shutter (204), at least a portion of which is operatively positioned over the display (202). The LC shutter (204) provides switching between a transparent state and a diffusive state with high image integrity, and high transmission in the transparent state. In one embodiment, the electronic device (200) further includes control logic (206) operatively coupled to the LC shutter (204) to provide control signals (212) to the LC shutter (204) to effect the transparent state. The LC shutter (204) includes a first dichroic polarizer (300), such as a broadband dichroic polarizer, an LC cell (304), and a diffusive reflective polarizer (307). The LC cell (304) is interposed between the first dichroic polarizer (300) and the diffusive reflective polarizer (307). Related methods are also set forth.
摘要:
The invention relates to a process for forming an integral protective layer on a polarizing layer comprising coating the layer with a sol, gelling the sol, and then curing the coating to form a contiguous crosslinked adherent protective layer
摘要:
Disclosed is an optical compensator for liquid crystal displays comprising a first polymeric layer having an out-of-plane birefringence not more negative than −0.005 and a second polymeric layer having an out-of-plane birefringence more negative than −0.005. The invention also provides an LC display and a process for making such compensators.
摘要:
A thermal infrared-detector array has semiconductor-junction elements as detectors. It has high sensitivity and low noise and is fabricated in semiconductor-fabrication process. The semiconductor-junction elements are located in a monocrystalline silicon layer overlying a silicon-oxide layer on a monocrystalline silicon substrate. A signal-output circuit reading out signals from the detector elements includes transistors located on the monocrystalline silicon substrate.
摘要:
An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.
摘要:
An optical material, comprising a resin composed of a polymer constituted of 10 of 95 mol %, based on the polymer, of a first structural unit represented by the formula (I) and 90 to 5 mol %, based on the polymer, of a second structural unit represented by the formula (II), and having a weight-average molecular weight of from 1.times.10.sup.3 to 5.times.10.sup.6 in polystyrene equivalent: ##STR1## The optical material has a Tg value not less than 120.degree. C., a light transmittance value not less than 85%, and a pencil hardness not lower than H.