公开(公告)号：US20140209857A1

公开(公告)日：2014-07-31

申请号：US14130345

申请日：2012-07-05

申请人： Takayoshi Takano ,  Takuya Mino ,  Norimichi Noguchi ,  Kenji Tsubaki ,  Hideki Hirayama

发明人： Takayoshi Takano ,  Takuya Mino ,  Norimichi Noguchi ,  Kenji Tsubaki ,  Hideki Hirayama

IPC分类号： H01L33/12 ,  H01L33/06 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32

摘要： In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

摘要翻译： 一种氮化物半导体发光元件的制造方法，包括：单晶基板; 和AlN层; 和第一导电类型的第一氮化物半导体层; 和由AlGaN基材料制成的发光层; 以及第二导电型的第二氮化物半导体层，形成所述AlN层的步骤包括：向所述反应器供给Al源气体和N源气体以产生具有Al- 极性是单晶衬底表面上的AlN层的一部分; 以及在第一步骤之后将Al源气体和N源气体供应到反应器中以形成AlN层的第二步骤。

公开(公告)号：US09293646B2

公开(公告)日：2016-03-22

申请号：US14130345

申请日：2012-07-05

申请人： Takayoshi Takano ,  Takuya Mino ,  Norimichi Noguchi ,  Kenji Tsubaki ,  Hideki Hirayama

发明人： Takayoshi Takano ,  Takuya Mino ,  Norimichi Noguchi ,  Kenji Tsubaki ,  Hideki Hirayama

IPC分类号： H01L21/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32

摘要： In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

摘要翻译： 一种氮化物半导体发光元件的制造方法，包括：单晶基板; 和AlN层; 和第一导电类型的第一氮化物半导体层; 和由AlGaN基材料制成的发光层; 以及第二导电型的第二氮化物半导体层，形成所述AlN层的步骤包括：向所述反应器供给Al源气体和N源气体的第一工序，生成具有Al- 极性是单晶衬底表面上的AlN层的一部分; 以及在第一步骤之后将Al源气体和N源气体供应到反应器中以形成AlN层的第二步骤。

公开(公告)号：US20130082297A1

公开(公告)日：2013-04-04

申请号：US13704679

申请日：2011-06-17

申请人： Norimichi Noguchi ,  Kenji Tsubaki ,  Takayoshi Takano

发明人： Norimichi Noguchi ,  Kenji Tsubaki ,  Takayoshi Takano

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46

摘要： An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.

摘要翻译： 紫外线半导体发光元件包括布置在n型氮化物半导体层和p型氮化物半导体层之间的发光层，与n型氮化物半导体层接触的n电极， 以及与p型氮化物半导体层接触的p电极。 p型氮化物半导体层具有p型接触层，该p型接触层的带隙比发光层的带隙小，与p电极欧姆接触。 在p型氮化物半导体层的面向发光层的表面的背面形成凹部，以避免形成有p电极的形成区域。 在凹陷部的内底面形成反射从发光层发出的紫外线的反射膜。

公开(公告)号：US09070847B2

公开(公告)日：2015-06-30

申请号：US13704679

申请日：2011-06-17

申请人： Norimichi Noguchi ,  Kenji Tsubaki ,  Takayoshi Takano

发明人： Norimichi Noguchi ,  Kenji Tsubaki ,  Takayoshi Takano

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L31/12 ,  H01L31/062 ,  H01L31/113 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L33/60 ,  H01L33/20 ,  H01L33/46 ,  H01L33/38

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46

摘要： An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.

摘要翻译： 紫外线半导体发光元件包括布置在n型氮化物半导体层和p型氮化物半导体层之间的发光层，与n型氮化物半导体层接触的n电极， 以及与p型氮化物半导体层接触的p电极。 p型氮化物半导体层具有p型接触层，该p型接触层的带隙比发光层的带隙小，与p电极欧姆接触。 在p型氮化物半导体层的面向发光层的表面的背面形成凹部，以避免形成有p电极的形成区域。 在凹陷部的内底面形成反射从发光层发出的紫外线的反射膜。

公开(公告)号：US20110042713A1

公开(公告)日：2011-02-24

申请号：US12933927

申请日：2009-03-23

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到 第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。 发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。 第三缓冲层5掺杂有作为供体的Si杂质。

公开(公告)号：US20120248456A1

公开(公告)日：2012-10-04

申请号：US13394459

申请日：2010-09-07

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L29/20 ,  H01L33/32 ,  H01L21/20

CPC分类号： C30B25/14 ,  C30B25/16 ,  C30B25/186 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer.

摘要翻译： 本发明的氮化物半导体发光元件在单晶的一个表面侧具有缓冲层，n型氮化物半导体层，发光层和p型氮化物半导体层的层叠结构 蓝宝石衬底的衬底。 作为缓冲层的氮化物半导体多层结构体包括：形成在单晶衬底的一个表面上的由AlN形成的多个岛状核; 由AlN层形成的第一氮化物半导体层，形成在单晶衬底的一个表面侧，以填充相邻核之间的间隙并覆盖所有核; 以及由AlN层形成并形成在第一氮化物半导体层上的第二氮化物半导体层。

公开(公告)号：US08120013B2

公开(公告)日：2012-02-21

申请号：US12621364

申请日：2009-11-18

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0 0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0 0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.

摘要翻译： 氮化物半导体发光器件具有p型氮化物半导体层7，n型氮化物半导体层3和发光层6，该发光层6介于p型氮化物半导体层 7和n型氮化物半导体层3.发光层6具有阻挡层6b和阱层6a的量子阱结构。 阻挡层6b由AlaGabIn（1-a-b）N（0 0）形成，并且含有浓度为大于零的第一杂质。 阱层6a由AlcGadIn（1-cd）N（0 0）形成，并且含有浓度为B的第二杂质 等于或大于零。 在本发明的氮化物半导体发光器件中，为了使阻挡层6b的氧浓度比阱层6a的浓度小，A的浓度大于B的浓度。

公开(公告)号：US08445938B2

公开(公告)日：2013-05-21

申请号：US12933927

申请日：2009-03-23

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到 第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。 发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。 第三缓冲层5掺杂有作为供体的Si杂质。

公开(公告)号：US08278129B2

公开(公告)日：2012-10-02

申请号：US12622085

申请日：2009-11-19

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L21/00

CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/32

摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N(0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。

公开(公告)号：US20100270583A1

公开(公告)日：2010-10-28

申请号：US12622085

申请日：2009-11-19

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/00 ,  H01L21/04

CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L33/32

摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

摘要翻译： 在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长 根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。 通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。