公开(公告)号：US20080230781A1

公开(公告)日：2008-09-25

申请号：US12152944

申请日：2008-05-19

Applicant: Yoichiro Numasawa ,  Yukinobu Murao

Inventor： Yoichiro Numasawa ,  Yukinobu Murao

IPC: H01L21/20 ,  H01L49/02

CPC classification number: C23C16/24 ,  C23C16/56 ,  Y10S977/814

Abstract: A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate.Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.

Abstract translation: 在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以 可以轻松，低成本地生产。

公开(公告)号：US6059985A

公开(公告)日：2000-05-09

申请号：US826735

申请日：1997-04-04

Applicant: Takanori Yoshimura ,  Shigeru Mizuno ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

Inventor： Takanori Yoshimura ,  Shigeru Mizuno ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

IPC: H01L21/28 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68

CPC classification number: H01L21/0209

Abstract: A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.

Abstract translation: 处理基板的方法具有以下处理。 在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。 然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过 衬底的周边边缘区域。 这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。

公开(公告)号：US20060276055A1

公开(公告)日：2006-12-07

申请号：US10645908

申请日：2003-08-22

Applicant: Yoichiro Numasawa ,  Yukinobu Murao

Inventor： Yoichiro Numasawa ,  Yukinobu Murao

IPC: H01L21/00

CPC classification number: C23C16/24 ,  C23C16/56 ,  Y10S977/814

Abstract: A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate. Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.

Abstract translation: 在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以 可以轻松，低成本地生产。

公开(公告)号：US06664496B2

公开(公告)日：2003-12-16

申请号：US10107304

申请日：2002-03-28

Applicant: Yoshimi Watabe ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Yukito Nakagawa

Inventor： Yoshimi Watabe ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Yukito Nakagawa

IPC: B23K900

CPC classification number: H01J37/32082

Abstract: A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.

公开(公告)号：US08002947B2

公开(公告)日：2011-08-23

申请号：US12289742

申请日：2008-11-03

Applicant: Yoichiro Numasawa ,  Yoshimi Watabe

Inventor： Yoichiro Numasawa ,  Yoshimi Watabe

IPC: B08B7/04 ,  B08B9/00

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32568 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

Abstract: A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.

Abstract translation: 等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率 ），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。 等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄 电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。 在清洁过程中，执行步骤清洁。 由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。 此外，所使用的处理气体的量被切断，并且工艺成本降低。

公开(公告)号：US07666763B2

公开(公告)日：2010-02-23

申请号：US12128465

申请日：2008-05-28

Applicant: Yukinobu Murao ,  Akira Kumagai ,  Yoichiro Numasawa

Inventor： Yukinobu Murao ,  Akira Kumagai ,  Yoichiro Numasawa

IPC: H01L21/20

CPC classification number: H01L27/1203 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/84 ,  H01L29/04 ,  H01L29/4925 ,  H01L29/66666 ,  H01L29/7827 ,  Y10S977/89 ,  Y10S977/936

Abstract: This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.

Abstract translation: 本发明提供了一种能够独立于衬底浓度来控制MOS晶体管的阈值电压的衬底结构，并且容易抑制由通道长度减小引起的短沟道效应。 在硅衬底的表面的氧化硅膜上形成由具有相同粒径的纳米硅粒子形成的第一纳米硅膜。 在第一纳米硅膜上形成氮化硅膜。 然后，形成平均粒径与第一纳米硅膜不同的第二纳米硅膜。 在这样制造的纳米硅半导体衬底上形成半导体电路器件。

公开(公告)号：US20090260974A1

公开(公告)日：2009-10-22

申请号：US12457672

申请日：2009-06-18

Applicant: Yoichiro Numasawa ,  Tsutomu Tsukada

Inventor： Yoichiro Numasawa ,  Tsutomu Tsukada

IPC: C01B7/00

CPC classification number: H01J37/321 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/0832 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0894 ,  C01B7/00 ,  C01B7/193 ,  H01J2237/022

Abstract: The present invention provides a method and apparatus for manufacturing halogen gas using a plasma chemical reaction, with the features of having simplicity, practicality, and maintaining safety in handling source materials and of being able to manufacture halogen gas in the same facility where halogen gas is used, and also provides a halogen gas circulatory and recovery system capable of circulating and using halogen gas efficiently. After the gas expressed in the chemical formula AiXj (A represents metallic element or semiconductor element, X represents halogen element, and i and j represent integers) is introduced into a reaction container in vacuum, plasmas are generated in the reaction container to produce a plasma chemical reaction. Fine particles produced by the plasma chemical reaction and containing an element other than halogen element as the major constituent are removed from the reaction container so as to generate halogen gas in the reaction container.

Abstract translation: 本发明提供了一种使用等离子体化学反应制造卤素气体的方法和装置，具有简单，实用和维护处理源材料的安全性以及能够在卤素气体相同设备中制造卤素气体的特征 并且还提供能够有效地循环和使用卤素气体的卤素气体循环和回收系统。 在化学式AiXj（A表示金属元素或半导体元素，X表示卤素元素，i和j表示整数）的气体在真空中引入反应容器中后，在反应容器中产生等离子体以产生等离子体 化学反应。 通过等离子体化学反应生成的含有卤素元素以外的元素作为主要成分的微粒从反应容器中除去，从而在反应容器中产生卤素气体。

公开(公告)号：US07091138B2

公开(公告)日：2006-08-15

申请号：US10927159

申请日：2004-08-27

Applicant: Yoichiro Numasawa ,  Nobuyoshi Koshida

Inventor： Yoichiro Numasawa ,  Nobuyoshi Koshida

IPC: H01L21/31

CPC classification number: H01L21/02664 ,  B82Y30/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/56 ,  H01J37/321 ,  H01J2237/2001 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/31662 ,  H01L21/3185

Abstract: A forming method and a forming apparatus of nanocrystalline silicon structure makes it possible to prepare a nanocrystalline silicon structure at a low temperature to have densely packed silicon crystal grains which are stably terminated and to effectively control the grain size in nanometer scale. A forming method and a forming apparatus of nanocrystalline silicon structure with oxide or nitride termination, carry out a first step of treating a surface of a substrate with hydrogen radical; a second step of depositing silicon crystals having a grain size of 10 nm or less by the thermal reaction of a silicon-containing gas; and a third step of terminating the surface of the silicon crystal with oxygen or nitrogen by using one of oxygen gas, oxygen radical and nitrogen radical.

Abstract translation: 纳米晶硅结构的形成方法和形成装置使得可以在低温下制备纳米晶体硅结构以具有稳定封端的密集堆积的硅晶粒并有效地控制纳米级的晶粒尺寸。 具有氧化物或氮化物终止的纳米晶硅结构的形成方法和形成装置，进行用氢自由基处理衬底表面的第一步骤; 通过含硅气体的热反应沉积具有10nm或更小的晶粒尺寸的硅晶体的第二步骤; 以及通过使用氧气，氧自由基和氮自由基之一用氧或氮终止硅晶体的表面的第三步骤。

公开(公告)号：US20120100309A1

公开(公告)日：2012-04-26

申请号：US13273258

申请日：2011-10-14

Applicant: Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

Inventor： Hidekazu MIYAIRI ,  Yoichiro NUMASAWA ,  Takayuki INOUE ,  Kojiro TAKAHASHI ,  Mitsuhiro ICHIJO

IPC: C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45574

Abstract: A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.

Abstract translation: 等离子体处理装置包括被室壁覆盖的处理室，其中上电极面向下电极; 以及通过所述上部电极和所述处理室与所述室壁隔开并与所述分隔板和喷淋板之间的第一气体扩散室连接的管线室。 第一气体扩散室与分散板和上部电极之间的第二气体扩散室连接。 第二气体扩散室与上部电极中的第一气体管连接。 上电极和室壁设置在同一轴线上。 分散板包括没有气孔的中心部分和具有多个气孔的周边部分。 中心部分面向与上电极的电极平面连接的第一气体管的气体导入口。

公开(公告)号：US20090095217A1

公开(公告)日：2009-04-16

申请号：US12289742

申请日：2008-11-03

Applicant: Yoichiro Numasawa ,  Yoshimi Watabe

Inventor： Yoichiro Numasawa ,  Yoshimi Watabe

IPC: C23C16/52

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32568 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

Abstract: A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.

Abstract translation: 等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率 ），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。 等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄 电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。 在清洁过程中，执行步骤清洁。 由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。 此外，所使用的处理气体的量被切断，并且工艺成本降低。