公开(公告)号：US20080035912A1

公开(公告)日：2008-02-14

申请号：US10599658

申请日：2005-08-30

申请人： Takayuki Takeuchi ,  Takahiro Kawashima ,  Tohru Saitoh ,  Tomohiro Okuzawa ,  Yasuo Kitaoka

发明人： Takayuki Takeuchi ,  Takahiro Kawashima ,  Tohru Saitoh ,  Tomohiro Okuzawa ,  Yasuo Kitaoka

IPC分类号： H01L51/10 ,  H01L21/336

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66742 ,  H01L51/0541 ,  H01L51/0545

摘要： A field-effect transistor includes a semiconductor layer (14), a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor layer (14), and a gate electrode (12) for applying an electric field to the semiconductor layer (14) between the source electrode (15) and the drain electrode (16). The semiconductor layer (14) contains an organic semiconductor material and a plurality of thin wires made of an inorganic semiconductor.

摘要翻译： 场效应晶体管包括电连接到半导体层（14）的半导体层（14），源电极（15）和漏电极（16），以及用于向该半导体层施加电场的栅电极 在源电极（15）和漏电极（16）之间的半导体层（14）。 半导体层（14）包含有机半导体材料和多个由无机半导体制成的细线。

公开(公告)号：US08368049B2

公开(公告)日：2013-02-05

申请号：US13399521

申请日：2012-02-17

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L29/0673 ,  H01L29/66772 ,  H01L29/78696

摘要： A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.

摘要翻译： 根据本发明的纳米线晶体管包括：至少一个纳米线13，其包括用作沟道区的芯部13a和覆盖芯部13a的表面的绝缘壳部13b; 源极和漏极14和15，其连接到纳米线13; 以及用于控制纳米线13的芯部13a的至少一部分的导电性的栅电极21.芯部13a由包含Si的半导体单晶制成，并且在与 其纵轴。 绝缘外壳部分13b由包括Si的绝缘体制成，并且起到至少一部分栅极绝缘膜的作用。

公开(公告)号：US20120156833A1

公开(公告)日：2012-06-21

申请号：US13399521

申请日：2012-02-17

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

IPC分类号： H01L21/336

CPC分类号： H01L29/0673 ,  H01L29/66772 ,  H01L29/78696

摘要： A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.

摘要翻译： 根据本发明的纳米线晶体管包括：至少一个纳米线13，其包括用作沟道区的芯部13a和覆盖芯部13a的表面的绝缘壳部13b; 源极和漏极14和15，其连接到纳米线13; 以及用于控制纳米线13的芯部13a的至少一部分的导电性的栅电极21.芯部13a由包含Si的半导体单晶制成，并且在与 其纵轴。 绝缘外壳部分13b由包括Si的绝缘体制成，并且起到至少一部分栅极绝缘膜的作用。

公开(公告)号：US08242025B2

公开(公告)日：2012-08-14

申请号：US12159352

申请日：2007-01-12

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Tohru Nakagawa ,  Hideo Torii

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Tohru Nakagawa ,  Hideo Torii

IPC分类号： H01L21/301

CPC分类号： H01L27/1266 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1285 ,  H01L27/1292

摘要： According to a method of the present invention for manufacturing a semiconductor piece, at least two semiconductor layers (12) are first formed on a substrate (10) by stacking a sacrificial layer (11) and the semiconductor layer (12) on the substrate (10) in this order and repeating this stacking. Next, the semiconductor layers (12) are divided into pieces by etching part of the sacrificial layers (11) and part of the semiconductor layers (12). Then, the pieces are separated from the substrate by removing the sacrificial layers (11).

摘要翻译： 根据本发明的用于制造半导体片的方法，首先通过在衬底（10）上层叠牺牲层（11）和半导体层（12）来形成至少两个半导体层（12） 10），并重复该堆叠。 接下来，通过蚀刻部分牺牲层（11）和部分半导体层（12）将半导体层（12）分割成多个。 然后，通过去除牺牲层（11）将片与衬底分离。

公开(公告)号：US20100133509A1

公开(公告)日：2010-06-03

申请号：US12451898

申请日：2008-06-04

申请人： Takahiro Kawashima ,  Tohru Saitoh

发明人： Takahiro Kawashima ,  Tohru Saitoh

IPC分类号： H01L29/775 ,  H01L21/04

CPC分类号： H01L21/02653 ,  B82Y10/00 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/60 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02656 ,  H01L27/3262 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/775 ,  H01L33/18 ,  Y10S438/962

摘要： A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.

摘要翻译： 提供一种制造具有第一和第二区域的半导体纳米线的方法。 将催化剂颗粒放在基材上。 引入第一源气体，从而通过气 - 液 - 固相生长从催化剂颗粒生长第一区域。 在第一区域的侧壁上形成保护涂层，并且引入第二源气体以通过液相 - 固相生长从第一区域延伸出第二区域。

公开(公告)号：US20100012921A1

公开(公告)日：2010-01-21

申请号：US12518821

申请日：2007-11-29

申请人： Takahiro Kawashima ,  Tohru Saitoh

发明人： Takahiro Kawashima ,  Tohru Saitoh

IPC分类号： H01L29/66 ,  H01L33/00 ,  H01L31/0352 ,  H01L21/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C30B11/12 ,  C30B29/605 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L31/028 ,  H01L31/0352 ,  H01L33/18 ,  H01L43/08 ,  Y02E10/547 ,  Y10S977/762

摘要： A nanowire according to the present invention includes: a nanowire body made of a first material; and a plurality of semiconductor particle made of a second material and being contained in at least a portion of the interior of the nanowire body.

摘要翻译： 根据本发明的纳米线包括：由第一材料制成的纳米线体; 以及由第二材料制成并被包含在纳米线体的内部的至少一部分中的多个半导体颗粒。

公开(公告)号：US07586130B2

公开(公告)日：2009-09-08

申请号：US11344574

申请日：2006-02-01

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Takeshi Takagi

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Takeshi Takagi

IPC分类号： H01L29/732

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/7781 ,  H01L29/78642 ,  Y10S977/938

摘要： A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region; a lower electrode, functioning as one of source and drain regions; an upper electrode, functioning as the other of the source and drain regions; a gate electrode for controlling the electric conductivity of at least a portion of the bundle of linear structures included in the active region; and a gate insulating film arranged between the active region and the gate electrode to electrically isolate the gate electrode from the bundle of linear structures. The transistor further includes a dielectric portion between the upper and lower electrodes. The upper electrode is located over the lower electrode with the dielectric portion interposed and includes an overhanging portion sticking out laterally from over the dielectric portion. The active region is located right under the overhanging portion of the upper electrode.

摘要翻译： 垂直场效应晶体管包括：具有用作沟道区的线性结构束的有源区; 用作源极和漏极区之一的下电极; 上电极，用作源极和漏极区域中的另一个; 用于控制所述有源区域中包括的所述线性结构束的至少一部分的电导率的栅电极; 以及栅极绝缘膜，其布置在所述有源区和所述栅电极之间，以将所述栅电极与所述线结构的束电隔离。 晶体管还包括在上电极和下电极之间的电介质部分。 上电极位于下电极的上方，电介质部分插入，并且包括从电介质部分的上方横向突出的突出部分。 有源区域位于上电极的伸出部分正下方。

公开(公告)号：US07091099B2

公开(公告)日：2006-08-15

申请号：US10807307

申请日：2004-03-24

申请人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

发明人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

IPC分类号： H01L21/331

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.

摘要翻译： 双极晶体管包括形成在Si单晶层上的Si单结晶层，单晶Si / SiGeC层和多晶Si / SiGeC层，具有发射极开口部分的氧化膜，发射极 ，和发射极层。 在单晶Si / SiGeC层上形成本征基层，单晶Si / SiGeC层的一部分，多晶Si / SiGeC层和Co硅化物层一起形成外部基极层。 发射电极的厚度被设定为使得注入发射电极并在其中扩散的硼离子不会到达发射极 - 基极接合部分。

公开(公告)号：US07718995B2

公开(公告)日：2010-05-18

申请号：US11812357

申请日：2007-06-18

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/068 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/762 ,  Y10T428/2918 ,  Y10T428/2927 ,  Y10T428/2938

摘要： A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth.

摘要翻译： 根据本发明的纳米线包括：由作为第一材料的晶体半导体制成的纳米线体; 以及多个微粒，其由包括半导体的构成元素的第二材料制成，并且位于纳米线体的表面的至少一部分上。 纳米线体表面光滑。

公开(公告)号：US20080246020A1

公开(公告)日：2008-10-09

申请号：US11812357

申请日：2007-06-18

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

IPC分类号： H01L29/12 ,  B32B1/00 ,  B32B5/16 ,  B32B9/00 ,  B05D5/12

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/068 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/762 ,  Y10T428/2918 ,  Y10T428/2927 ,  Y10T428/2938

摘要： A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth.

摘要翻译： 根据本发明的纳米线包括：由作为第一材料的晶体半导体制成的纳米线体; 以及多个微粒，其由包括半导体的构成元素的第二材料制成，并且位于纳米线体的表面的至少一部分上。 纳米线体表面光滑。