摘要:
An optical property measurement apparatus includes: a main body which includes a plane-shape surface that is so disposed as to face the display portion; an optical sensor which receives light directed from an opening that is formed through the plane-shape surface; and a support portion which is disposed on a side of the plane-shape surface and keeps a constant distance between the display portion and the plane-shape surface; wherein a light shield portion that is so disposed as to enclose a circumferential area of the opening of the plane-shape surface and shields entrance of light from a region other than a measurement target region of the display portion when the optical property is measured.
摘要:
An optical property measurement apparatus includes: a main body which includes a plane-shape surface that is so disposed as to face the display portion; an optical sensor which receives light directed from an opening that is formed through the plane-shape surface; and a support portion which is disposed on a side of the plane-shape surface and keeps a constant distance between the display portion and the plane-shape surface; wherein a light shield portion that is so disposed as to enclose a circumferential area of the opening of the plane-shape surface and shields entrance of light from a region other than a measurement target region of the display portion when the optical property is measured.
摘要:
A spectral characteristic measuring apparatus includes: an illuminating section for irradiating illumination light onto a sample; a spectral section for separating light from the sample irradiated with the illumination light into light rays in accordance with wavelengths; a light receiving section including a plurality of light receiving elements for receiving the light rays separated by the spectral section in accordance with wavelengths, and converting the received light rays into electrical output signals; and a storing section for storing a combined central wavelength of each of the light receiving elements calculated in advance based a spectral intensity distribution of the illumination light.
摘要:
A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.
摘要:
The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several Ω or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.
摘要:
A liquid conveying substrate comprises: rectangular electrodes which are disposed on the substrate surface and whose surfaces are covered with a dielectric with a water repellent surface; first axial electrode columns where the rectangular electrodes are coupled in an x direction; and second axial electrode columns where the rectangular electrodes are coupled in a y direction. Accordingly, electrodes necessary for conveying liquid droplets can be arranged on one substrate, and the number of mechanisms for controlling the potential can be suppressed.
摘要:
In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of reduction of the device feature length and reduction in stress occurring in an isolation trench, the silicon nitride film liner is first deposited on the inner wall of the trench formed on a silicon substrate. The upper surface of a first embedded insulator film for filling the inside of the trench is recessed downward so as to expose an upper end portion of the silicon nitride film liner. Next, the exposed portion of the silicon nitride film liner is converted into non-silicon-nitride type insulator film, such as a silicon oxide film. A second embedded insulator film is then deposited on the upper portion of the first embedded insulator film, and the deposited surface is then planarized.
摘要:
To provide a rod block monitor in which irrespective of the selection or non-selection of a control rod, such a process is repeatedly executed that gain adjustment is performed at fixed intervals at all times to match a local area average value of signals of neutron detectors surrounding the control rod with a nuclear reactor average power and a block level appropriate to the local area average value of the neutron detector signals after the gain adjustment is set.
摘要:
There is provided a semiconductor device configured as follows. On a semiconductor substrate, a titanium oxide film which is an insulating film having a higher dielectric constant than that of a silicon dioxide film is formed as a gate insulating film, and a gate electrode is disposed thereon, resulting in a field effect transistor. The end portions in the gate length direction of the titanium oxide film are positioned inwardly from the respective end portions on the source side and on the drain side of the gate electrode, and the end portions of the titanium oxide film are positioned in a region in which the gate electrode overlaps with the source region and the drain region in plan configuration. This semiconductor device operates at a high speed, and is excellent in short channel characteristics and driving current. Further, in the semiconductor device, the amount of metallic elements introduced into a silicon substrate is small.
摘要:
In a probe memory device, a technique of realizing consistency of high-density recording and high-speed reading/writing is provided. A recording medium is placed to a probe array chip on which a plurality of probes are arranged in such a way as to maintain a constant spacing thereto by adopting a high-stiffness elastic support structure. The recording medium is equipped with a stage scanner that is driven continuously while drawing a constant trajectory on an X-Y plane almost in parallel to a probe array chip plane. The probes are equipped with respective actuators each being driven in a Z direction almost perpendicular to the X-Y plane. Each of the probes is made to write or read by altering a distance between the probe and the recording medium in parallel processing. The X-Y actuator is controlled so that the probe may continue a predetermined cyclic movement. Moreover, a tracking area is provided in a portion of the recording medium, and a trajectory of the probe by actuation is controlled so as to have a fixed geometry.