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1.发明授权Process for producing a human T-cell population having both cytotoxic and immunosuppressive activities 有权用于产生具有细胞毒性和免疫抑制活性的人T细胞群体的方法公开(公告)号：US08492146B2
公开(公告)日：2013-07-23
申请号：US13265942
申请日：2010-04-15
IPC分类号： C12N5/0783
CPC分类号： C12N5/0638 , A61K2035/122 , A61K2035/124 , A61K2039/5158 , A61K2039/57 , C12N5/0637 , C12N2502/1394
摘要： A human T cell population which has both cytotoxic and immunosuppressive activities, is efficiently produced by first fractionating CD2-positive CD14-negative cells from mononuclear cells collected from a human umbilical cord blood, and then co-culturing them with stromal cells. The resulting blast cells, which have the desired activity, are proliferated by further culture.
摘要翻译： 通过首先从收集自人脐带血的单核细胞中分离CD2阳性CD14阴性细胞，然后与基质细胞共培养，有效地产生具有细胞毒性和免疫抑制活性的人类T细胞群体。 通过进一步培养来增殖具有所需活性的所得胚细胞。
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2.发明申请PROCESS FOR PRODUCING A HUMAN T-CELL POPULATION HAVING BOTH CYTOTOXIC AND IMMUNOSUPPRESSIVE ACTIVITIES 有权生产具有两种细胞因子和免疫抑制活性的人类T细胞群体的方法公开(公告)号：US20120040454A1
公开(公告)日：2012-02-16
申请号：US13265942
申请日：2010-04-15
IPC分类号： C12N5/0783
CPC分类号： C12N5/0638 , A61K2035/122 , A61K2035/124 , A61K2039/5158 , A61K2039/57 , C12N5/0637 , C12N2502/1394
摘要： The present invention has an object to provide a method for efficiently producing a human T cell population which has both cytotoxic and immunosuppressive activities, and solves the above object by providing a method for producing a human T cell population which has both cytotoxic and immunosuppressive activities, comprising the following steps (1) to (4):(1) fractionating mononuclear cells collected from a human umbilical cord blood into CD14-positive (CD14+) cells and CD14-negative (CD14−) cells, and then fractionating the CD14-negative (CD14−) cells into CD2-positive CD14-negative (CD2+CD14−) cells, and CD2-negative CD14-negative (CD2−CD14−) cells;(2) co-culturing the CD2-positive CD14-negative (CD2+CD14−) cells obtained in step (1) with stromal cells to generate blast cells;(3) adding the blast cells obtained in step (2) to the co-culture of the CD14-positive (CD14+) cells obtained in step (1) with stromal cells to allow the blast cells to proliferate; and(4) allowing the blast cells obtained in step (3) to further proliferate by co-culturing with stromal cells in the presence of interleukin-2 (IL-2) to generate a human T cell population which has both cytotoxic and immunosuppressive activities.
摘要翻译： 本发明的目的是提供一种有效地制备具有细胞毒性和免疫抑制活性的人T细胞群的方法，通过提供具有细胞毒性和免疫抑制活性的人T细胞群的制备方法来解决上述目的， 包括以下步骤（1）至（4）：（1）将从人脐带血中收集的单核细胞分离成CD14阳性（CD14 +）细胞和CD14阴性（CD14-）细胞，然后将CD14阴性 （CD14-）细胞进入CD2阳性CD14阴性（CD2 + CD14-）细胞和CD2阴性CD14阴性（CD2-CD14-）细胞; （2）在步骤（1）中获得的CD2阳性CD14-阴性（CD2 + CD14-）细胞与基质细胞共培养以产生胚细胞; （3）将步骤（2）中获得的胚细胞添加到步骤（1）中获得的CD14阳性（CD14 +）细胞与基质细胞的共培养物中，以使胚细胞增殖; 和（4）通过在白细胞介素-2（IL-2）存在下与基质细胞共培养使得步骤（3）中获得的胚细胞进一步增殖以产生具有细胞毒性和免疫抑制活性的人T细胞群 。
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公开(公告)号：US20090297490A1
公开(公告)日：2009-12-03
申请号：US12282977
申请日：2007-03-15
CPC分类号： C12N5/0636 , A61K35/17 , A61K2035/122 , A61K2300/00
摘要： The present invention has objects to provide a novel human T-cell population having both cytotoxic and immunosuppressive activities, and to a method for preparing the same. The above objects are attained by providing a human T-cell population which is obtainable by coculturing mononuclear cells, collected from human blood, with stroma cells and which has the following features: (1) being positive for CD3, CD25, CD28 and T-cell antigen receptor αβ; (2) essentially consisting of three groups of a CD4 positive and CD8 positive (CD4+CD8−) T-cell group, a CD4 positive and CD8 dimly positive (CD4+CD8dim) T-cell group, and a CD4 negative and CD8 positive (CD4−CD8+) T-cell group; (3) exerting a cytotoxic activity against the cocultured stroma cells; and (4) exerting an immunosuppressive activity against activated T cells.
摘要翻译： 本发明的目的是提供具有细胞毒性和免疫抑制活性两者的新型人T细胞群及其制备方法。 上述目的是通过提供通过共培养从人血液收集的单核细胞与基质细胞获得的人类T细胞群而获得的，并且具有以下特征：（1）对于CD3，CD25，CD28和T- 细胞抗原受体 （2）基本上由CD4阳性和CD8阳性（CD4 + CD8-）T细胞组，CD4阳性和CD8阳性（CD4 + CD8dim）T细胞组和CD4阴性和CD8阳性三组组成 （CD4-CD8 +）T细胞组; （3）对共培养的基质细胞发挥细胞毒活性; 和（4）对活化的T细胞施加免疫抑制活性。
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公开(公告)号：US08883495B2
公开(公告)日：2014-11-11
申请号：US12282977
申请日：2007-03-15
IPC分类号： C12N5/00 , A61K35/14 , C12N5/0783 , A61K35/12
CPC分类号： C12N5/0636 , A61K35/17 , A61K2035/122 , A61K2300/00
摘要： The present invention has objects to provide a novel human T-cell population having both cytotoxic and immunosuppressive activities, and to a method for preparing the same. The above objects are attained by providing a human T-cell population which is obtainable by coculturing mononuclear cells, collected from human blood, with stroma cells and which has the following features: (1) being positive for CD3, CD25, CD28 and T-cell antigen receptor αβ; (2) essentially consisting of three groups of a CD4 positive and CD8 positive (CD4+CD8+) T-cell group, a CD4 positive and CD8 dimly positive (CD4+CD8dim) T-cell group, and a CD4 negative and CD8 positive (CD4−CD8+) T-cell group; (3) exerting a cytotoxic activity against the cocultured stroma cells; and (4) exerting an immunosuppressive activity against activated T cells.
摘要翻译： 本发明的目的是提供具有细胞毒性和免疫抑制活性两者的新型人T细胞群及其制备方法。 上述目的是通过提供通过共培养从人血液收集的单核细胞与基质细胞获得的人类T细胞群而获得的，并且具有以下特征：（1）对于CD3，CD25，CD28和T- 细胞抗原受体α＆bgr; （2）基本上由CD4阳性和CD8阳性（CD4 + CD8 +）T细胞组，CD4阳性和CD8阳性（CD4 + CD8dim）T细胞组和CD4阴性和CD8阳性（CD4 + CD4-CD8 +）T细胞组; （3）对共培养的基质细胞发挥细胞毒活性; 和（4）对活化的T细胞施加免疫抑制活性。
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公开(公告)号：US20170327969A1
公开(公告)日：2017-11-16
申请号：US15607319
申请日：2017-05-26
申请人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： C30B25/18 , C30B25/02 , C30B29/40 , H01L33/32 , H01L33/16 , H01L29/20 , H01L29/04 , B82Y20/00 , H01L21/02 , H01S5/32 , H01S5/343
CPC分类号： C30B25/18 , B82Y20/00 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.
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6.发明授权Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other 有权III族氮化物晶体在具有至少两个表面的种子上的等温生长彼此形成锐角，右或钝角公开(公告)号：US09133564B2
公开(公告)日：2015-09-15
申请号：US13283862
申请日：2011-10-28
CPC分类号： C30B7/105 , C30B29/403 , Y10T428/24479
摘要： An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.
摘要翻译： III族氮化物晶体在具有至少两个表面的起始晶种上相对于彼此形成锐角，右或钝角，即大于0度且小于180度的氨热生长，使得暴露表面 一起形成凹面。
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7.发明授权Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管公开(公告)号：US09040327B2
公开(公告)日：2015-05-26
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/06 , H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/02 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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8.发明授权Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD) 有权使用金属有机化学气相沉积（MOCVD）生长非极性M面III族氮化物膜公开(公告)号：US08795440B2
公开(公告)日：2014-08-05
申请号：US13313335
申请日：2011-12-07
CPC分类号： H01L21/02658 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
摘要翻译： 生长非极性m面III族氮化物膜的方法，例如GaN，AlN，AlGaN或InGaN，其中非极性m面III族氮化物膜在合适的衬底上生长，例如m-SiC ，m-GaN，LiGaO2或LiAlO2基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基底，在退火的基底上生长诸如氮化铝（AlN）的成核层，以及生长非极性m- 使用MOCVD在成核层上的III型氮化物膜。
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公开(公告)号：US08779308B2
公开(公告)日：2014-07-15
申请号：US13367752
申请日：2012-02-07
申请人： Akihiko Takemae , Norio Endo , Shuji Nakamura , Tamotsu Koike , Takeshi Nishino
发明人： Akihiko Takemae , Norio Endo , Shuji Nakamura , Tamotsu Koike , Takeshi Nishino
CPC分类号： H01H3/125 , H01H13/14 , H01H13/36 , H01H13/702 , H01H2203/038 , H01H2227/036
摘要： A key switch device including a key top; a pair of link members connected to the key top and interlocked with each other to guide a vertical motion of the key top; a switch mechanism including a membrane sheet switch capable of opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top; a flexible thin film sheet attached to the membrane sheet switch; and a housing attached to the thin film sheet, the housing adapted to connect the link members to the thin film sheet.
摘要翻译： 一种钥匙开关装置，包括键顶; 一对连接构件，连接到键顶并互锁，以引导键顶的垂直运动; 开关机构，其包括根据键顶的垂直运动能够打开和闭合电路的接触部分的膜片开关; 安装在薄片开关上的柔性薄膜片; 以及附接到所述薄膜片的壳体，所述壳体适于将所述连接构件连接到所述薄膜片。
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10.发明授权Method for increasing the area of non-polar and semi-polar nitride substrates 有权增加非极性和半极性氮化物衬底面积的方法公开(公告)号：US08729671B2
公开(公告)日：2014-05-20
申请号：US13327521
申请日：2011-12-15
IPC分类号： H01L29/20
CPC分类号： C30B33/00 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003
摘要： A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.
摘要翻译： 一种用于制造具有增加的表面积的高质量独立非极性和半极性氮化物衬底的方法，包括通过用不同的和非正交的生长方向将膜形成在一个层叠上来堆叠多个膜。
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