Method of manufacturing non-linear resistive element array
    7.
    发明授权
    Method of manufacturing non-linear resistive element array 失效
    制造非线性电阻元件阵列的方法

    公开(公告)号:US4895789A

    公开(公告)日:1990-01-23

    申请号:US174833

    申请日:1988-03-29

    摘要: A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; depositing a non-linear resistive layer on the first conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by etching process using a patterned resist layer as a mask; and forming the non-linear resistive layer in a desired pattern using the resist layer as a mask.

    摘要翻译: 一种用于在衬底上制造非线性电阻元件阵列的方法,包括:在所述衬底上沉积第一导电层并以期望的图案选择性地形成所述层; 在第一导电层上沉积非线性电阻层; 在所述非线性电阻层上沉积第二导电层; 通过使用图案化的抗蚀剂层作为掩模的蚀刻工艺以期望的图案形成第二导电层; 以及使用抗蚀剂层作为掩模,以期望的图案形成非线性电阻层。

    AT-Cut quartz resonator, with w/t=2.0 to 2.8, l/t<25
    9.
    发明授权
    AT-Cut quartz resonator, with w/t=2.0 to 2.8, l/t<25 失效
    AT-Cut石英谐振器,w / t = 2.0至2.8,l / t <25

    公开(公告)号:US4306170A

    公开(公告)日:1981-12-15

    申请号:US69932

    申请日:1979-08-27

    摘要: An AT-cut quartz resonator is disclosed, wherein the length l, the width w and the thickness t of the quartz crystal plate are respectively chosen in the directions of an electrical axis (X-axis), an optical axis (Z'-axis) and a mechanical axis (Y'-axis), the width-to-thickness ratio w/t is chosen in the range of 2.0 to 2.8 and the length-to-thickness ratio l/t is chosen less than 25. Consequently, an AT-cut quartz resonator of miniature size having high Q-values of the major mode and excellent frequency-temperature characteristics of the vibration frequency is realized.

    摘要翻译: 公开了一种AT切割石英谐振器,其中石英晶体板的长度l,宽度w和厚度t分别沿电轴(X轴),光轴(Z'轴) )和机械轴(Y'轴),宽/厚比w / t选择在2.0至2.8的范围内,并且长度与厚度之比1 / t选择为小于25.因此, 实现了主模具有高Q值和振动频率优异频率特性的微型尺寸的AT切割石英谐振器。

    Method of producing liquid-crystal display device
    10.
    发明授权
    Method of producing liquid-crystal display device 失效
    制造液晶显示装置的方法

    公开(公告)号:US4599246A

    公开(公告)日:1986-07-08

    申请号:US665774

    申请日:1984-10-29

    摘要: A thin film transistor array for a liquid crystal display device is produced by simultaneously forming gate electrodes and picture element electrodes; forming islands of a layered structure comprised of a gate insulating film, a thin semiconductor film and a light shielding film in a single masking step; and forming the gate, source and drain wiring metals in contact windows by the "lift-off" technique after using a resist film for opening the contact windows. Only three masking steps are required thereby enabling an increase in production yield and a lower production cost as compared to conventional techniques which typically require seven masking steps.

    摘要翻译: 通过同时形成栅电极和像素电极来制造用于液晶显示器件的薄膜晶体管阵列; 在单个掩蔽步骤中形成由栅绝缘膜,薄半导体膜和遮光膜构成的层状结构的岛; 以及在使用用于打开接触窗的抗蚀剂膜之后,通过“剥离”技术在接触窗口中形成栅极,源极和漏极布线金属。 与通常需要七个掩蔽步骤的常规技术相比,仅需要三个掩蔽步骤,从而能够提高生产产量和降低生产成本。