公开(公告)号：US4923715A

公开(公告)日：1990-05-08

申请号：US358493

申请日：1989-05-30

申请人： Tetsuo Matsuda ,  Iwao Kunishima

发明人： Tetsuo Matsuda ,  Iwao Kunishima

IPC分类号： C23C8/24 ,  C23C16/34 ,  C23C16/44

CPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/4404 ,  C23C8/24

摘要： A method for the formation of a thin, high melting-point metal film such as W, on a substrate surface, by means of CVD, is disclosed herein. In this method, the inner wall of the CVD reaction tube and the surface of the at least part of the fittings disposed therewithin are covered with a metal nitride film, in the process of performing the CVD operation. The method permits the formation of a high quality film, and also prevents the deposition of the high melting-point metal on the inner wall of the reaction chamber, even if the CVD operation is repeatedly performed over a long period of time.

摘要翻译： 本文公开了通过CVD在衬底表面上形成诸如W的薄的高熔点金属膜的方法。 在该方法中，在进行CVD操作的过程中，CVD反应管的内壁和布置在其中的配件的至少一部分的表面被金属氮化物膜覆盖。 该方法允许形成高质量的膜，并且即使在长时间反复进行CVD操作，也可以防止高熔点金属沉积在反应室的内壁上。

公开(公告)号：US07429508B2

公开(公告)日：2008-09-30

申请号：US11941776

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L21/8242

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US20080076192A1

公开(公告)日：2008-03-27

申请号：US11941776

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L21/8239

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

摘要翻译： 半导体存储器件包括具有第一区域和第二区域的半导体衬底，放置在半导体衬底的第一区域中的晶体管，在第一和第二区域中的晶体管上形成在半导体衬底上的第一绝缘膜， 形成在第一区域的第一绝缘膜上并与晶体管电连接的第一铁电电容器，形成在第一铁电电容器上方的第一和第二区域上的第一绝缘膜上方的氢阻挡膜， 并且电连接到第一铁电电容器，以及第二触点，其穿过第二区域中的氢阻挡膜并处于浮置状态。

公开(公告)号：US20080073684A1

公开(公告)日：2008-03-27

申请号：US11941791

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L27/105

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US20080073683A1

公开(公告)日：2008-03-27

申请号：US11941755

申请日：2007-11-16

申请人： Osamu HIDAKA ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu HIDAKA ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L29/76

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

公开(公告)号：US07312488B2

公开(公告)日：2007-12-25

申请号：US11134414

申请日：2005-05-23

申请人： Tohru Ozaki ,  Iwao Kunishima

发明人： Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L29/76

CPC分类号： H01L27/11507 ,  H01L27/105 ,  H01L27/11502 ,  H01L27/11509 ,  H01L28/57

摘要： There is provided a semiconductor storage device comprising a ferroelectric capacitor superior in barrier capability against penetration of hydrogen from all directions including a transverse direction. The device comprises a transistor formed on a semiconductor substrate, the ferroelectric capacitor formed above the transistor and including a lower electrode, a ferroelectric film, and an upper electrode, a first hydrogen barrier film which continuously surrounds side portions of a ferroelectric capacitor cell array constituted of a plurality of ferroelectric capacitors, and a second hydrogen barrier film which is formed above the ferroelectric capacitor cell array and which is brought into contact with the first hydrogen barrier film in the whole periphery.

摘要翻译： 提供了一种包括铁电电容器的半导体存储装置，该铁电电容器的阻挡能力优于氢气从包括横向的所有方向渗透。 该器件包括形成在半导体衬底上的晶体管，形成在晶体管上方并包括下电极，铁电体膜和上电极的铁电电容器，连续围绕构成的铁电电容器单元阵列的侧部的第一氢阻挡膜 的多个强电介质电容器，以及形成在铁电体电容器单元阵列上方并与整个周边与第一氢阻挡膜接触的第二氢阻挡膜。

公开(公告)号：US20070272959A1

公开(公告)日：2007-11-29

申请号：US11753292

申请日：2007-05-24

申请人： Osamu Hidaka ,  Iwao Kunishima

发明人： Osamu Hidaka ,  Iwao Kunishima

IPC分类号： H01L29/94

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55 ,  H01L29/40111 ,  H01L29/516

摘要： A method of manufacturing a ferroelectric memory cell includes: forming device isolation regions; and source/drain regions; forming a gate insulating film on the semiconductor substrate; forming a gate electrode on the gate insulating film; forming; forming a contact plug to be connected to one of the source/drain regions. The method further includes: forming a lower electrode to be connected to the contact plug; depositing a sol-gel solution containing a ferroelectric minute crystal on the lower electrode to form a ferroelectric film; forming an upper electrode on the ferroelectric film; forming a second interlayer insulating film. The method further includes: forming a capacitor contact plug to be connected to the upper electrode; forming a substrate contact plug to be connected to the other one of the source/drain regions; and forming first and second wiring layers to be connected to the capacitor contact plug and the substrate contact plug, respectively.

摘要翻译： 制造铁电存储单元的方法包括：形成器件隔离区; 和源极/漏极区域; 在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 成型; 形成要连接到源极/漏极区域之一的接触插塞。 该方法还包括：形成要连接到接触插塞的下电极; 在下部电极上沉​​积含有铁电微晶的溶胶 - 凝胶溶液，形成铁电体膜; 在所述强电介质膜上形成上电极; 形成第二层间绝缘膜。 该方法还包括：形成要连接到上电极的电容器接触插塞; 形成要连接到所述源极/漏极区域中的另一个的衬底接触插塞; 以及分别形成要连接到电容器接触插塞和基板接触插塞的第一和第二布线层。

公开(公告)号：US5990507A

公开(公告)日：1999-11-23

申请号：US889470

申请日：1997-07-08

申请人： Hiroshi Mochizuki ,  Kumi Okuwada ,  Hiroyuki Kanaya ,  Osamu Hidaka ,  Susumu Shuto ,  Iwao Kunishima

发明人： Hiroshi Mochizuki ,  Kumi Okuwada ,  Hiroyuki Kanaya ,  Osamu Hidaka ,  Susumu Shuto ,  Iwao Kunishima

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/11507 ,  H01L21/76895 ,  H01L27/10852 ,  H01L27/11502 ,  H01L28/55

摘要： A method of manufacturing a semiconductor apparatus comprises the steps of forming, on a surface of a semiconductor substrate, an MIS transistor including a drain region and a source region each formed of an impurity diffusion region, forming an insulation film on the semiconductor substrate after the MIS transistor has been formed, selectively forming contact holes in the insulation film, embedding, into the contact hole, a capacitor contact plug having a lower end which is in contact with one of the drain region and the source region of the MIS transistor, forming a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode on the insulation film after the capacitor contact plug has been formed, and forming an electric wire for establishing a connection between the upper electrode of the ferroelectric capacitor and an upper surface of the capacitor contact plug.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底的表面上形成包括漏区和源区的MIS晶体管，所述漏极区和源区各自由杂质扩散区形成，在所述半导体衬底之后形成绝缘膜 MIS晶体管已经形成，在绝缘膜中选择性地形成接触孔，将接触孔埋入电容器接触插塞中，该电容器接触插塞的下端与MIS晶体管的漏极区域和源极区域中的一个接触，形成 在形成电容器接触插塞之后，在绝缘膜上形成具有下电极，铁电体膜和上电极的铁电电容器，并且形成用于建立铁电电容器的上电极和上电极之间的连接的电线 电容器接触插头。

公开(公告)号：US5162263A

公开(公告)日：1992-11-10

申请号：US755820

申请日：1991-09-06

申请人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

发明人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/66272 ,  H01L21/2257 ,  H01L29/41 ,  H01L29/45 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66575 ,  Y10S148/019 ,  Y10S257/90

摘要： A semiconductor device comprises a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further comprises metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate. The method also includes cooling the top of the substrate to form a temperature gradient that results in increased dopant concentration at the bottom of a silicide layer.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底。 绝缘膜和金属膜依次形成在半导体衬底的主顶表面上。 第二导电类型的杂质扩散层选择性地形成在半导体衬底的主顶表面上。 半导体器件还包括由半导体衬底的构成元件和金属元素组成的金属化合物层。 金属化合物层以不与绝缘膜接触的方式形成在杂质扩散层中，并且半导体衬底的主背面侧上的金属化合物层具有平行于该半导体衬底的顶表面形成的面 半导体衬底。 该方法还包括冷却衬底的顶部以形成导致硅化物层底部的掺杂剂浓度增加的温度梯度。

公开(公告)号：US07573084B2

公开(公告)日：2009-08-11

申请号：US11898949

申请日：2007-09-18

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括堆叠第一电极，铁电体膜和第二电极的铁电电容器，具有氢阻挡性能的第一保护膜， 第一保护膜形成在第一电极下方和铁电电容器的侧壁上，第一保护膜从第二电极朝向第一电极加宽，具有氢阻挡性能的第二保护膜，形成第二保护膜 在第二电极上以及形成在铁电电容器的侧壁上的第一保护膜上，第二保护膜从第一电极朝向第二电极加宽，单元晶体管，单元晶体管的源极连接到 第一电极，单元晶体管的漏极连接到位线，栅极连接到aw ord行。