Leak test method and leak test apparatus
    1.
    发明授权
    Leak test method and leak test apparatus 有权
    泄漏试验方法和泄漏试验装置

    公开(公告)号:US09404828B2

    公开(公告)日:2016-08-02

    申请号:US14353406

    申请日:2012-10-22

    申请人: Tetsuya Yamaguchi

    发明人: Tetsuya Yamaguchi

    摘要: A leak test method includes: reducing first pressure in an inspection space in a work and second pressure in a space in a master chamber; humidifying the inspection space in the work; and detecting a change in differential pressure between the inspection space in the work and the space in the master chamber, while the inspection space in the work is in a water-vapor saturated state. Also, in this leak test method, a leak in the inspection space in the work is detected from the change in the differential pressure.

    摘要翻译: 泄漏测试方法包括:减小工作中的检查空间中的第一压力和在主室中的空间中的第二压力; 加湿工作中的检查空间; 并且检测作业中的检查空间与主室中的空间之间的压差的变化,同时工件中的检查空间处于水汽饱和状态。 此外,在这种泄漏测试方法中,根据差压的变化来检测工件中的检查空间中的泄漏。

    Solid-state image sensing device and method of manufacturing the same
    3.
    发明授权
    Solid-state image sensing device and method of manufacturing the same 失效
    固态摄像装置及其制造方法

    公开(公告)号:US08508628B2

    公开(公告)日:2013-08-13

    申请号:US12877654

    申请日:2010-09-08

    申请人: Tetsuya Yamaguchi

    发明人: Tetsuya Yamaguchi

    IPC分类号: H04N5/217 H04N3/14

    摘要: According to one embodiment, a back side illumination solid-state image sensing device which comprises a pixel region where a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged on a semiconductor substrate, and in which a light illumination surface is formed on a substrate surface opposite to a surface of the semiconductor substrate on which the signal scanning circuit is formed, includes a silicon oxide film formed on the semiconductor substrate on the light illumination surface side, a p-type amorphous silicon compound layer formed on the silicon oxide film, and a hole storage layer formed by the p-type amorphous silicon compound layer near an interface between the semiconductor substrate on the light illumination surface side and the silicon oxide film.

    摘要翻译: 根据一个实施例,一种背面照明固态图像感测装置,其包括像素区域,其中包括光电转换器和信号扫描电路的多个像素布置在半导体衬底上,并且其中光照明表面是 形成在与形成有信号扫描电路的半导体衬底的表面相反的衬底表面上,包括在光照射面侧形成在半导体衬底上的氧化硅膜,形成在该衬底表面上的p型非晶硅化合物层 氧化硅膜和由p型非晶硅化合物层在光照射面侧的半导体基板之间的界面附近与氧化硅膜形成的空穴存储层。

    Image forming apparatus
    4.
    发明授权
    Image forming apparatus 有权
    图像形成装置

    公开(公告)号:US08506037B2

    公开(公告)日:2013-08-13

    申请号:US11946544

    申请日:2007-11-28

    IPC分类号: B41J29/393

    摘要: An image forming apparatus including: an output image forming section for forming an image and a pattern on a supporting medium under a prescribed condition; an output section for transferring the formed image on a recording sheet; a correction section for performing reading of the formed pattern and correcting the condition based on a result of the reading; and a correction control section for controlling operations of the output image forming section, the output section, and the correction section, wherein the correction control section identifies whether or not an area where the image is to be formed and an area where the pattern is to be formed overlap each other, and when the areas are identified that they do not overlap each other, the correction control section controls the output image forming section to simultaneously form the image and the pattern in parallel on the supporting medium.

    摘要翻译: 一种图像形成装置,包括:输出图像形成部,用于在规定条件下在支撑介质上形成图像和图案; 输出部,用于将形成的图像转印到记录纸上; 校正部分,用于执行所形成的图案的读取并基于读取的结果来校正条件; 以及校正控制部分,用于控制输出图像形成部分,输出部分和校正部分的操作,其中校正控制部分识别要形成图像的区域和图案的区域 被形成为彼此重叠,并且当区域被识别为它们彼此不重叠时,校正控制部分控制输出图像形成部分以在支撑介质上同时形成图像和图案。

    SOLID-STATE IMAGING DEVICE
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20120199894A1

    公开(公告)日:2012-08-09

    申请号:US13365627

    申请日:2012-02-03

    IPC分类号: H01L31/113

    摘要: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

    摘要翻译: 根据一个实施例,固态成像装置包括由具有第一和第二表面的半导体衬底中的元件隔离区围绕的第一元件形成区域,元件形成区域中的第一表面上的上部元件隔离层, 在第二表面和上部元件隔离层之间的下部元件隔离层,元件形成区域中的第一光电二极管,元件形成区域中的浮动扩散以及设置在第一光电二极管和浮动扩散部之间的第一晶体管。 下部元件隔离层的侧表面比上部元件隔离层的侧表面更靠近晶体管。

    Hydraulic control apparatus for a multi-stage automatic transmission
    6.
    发明申请
    Hydraulic control apparatus for a multi-stage automatic transmission 有权
    用于多级自动变速器的液压控制装置

    公开(公告)号:US20070161449A1

    公开(公告)日:2007-07-12

    申请号:US11643785

    申请日:2006-12-22

    IPC分类号: F16H31/00

    摘要: A hydraulic control apparatus for a multi-stage automatic transmission includes solenoid valves such as the linear solenoid valves that are formed as normally closed valves. A first clutch apply relay valves that outputs a forward range pressure as a reverse input pressure during an all-solenoid-off mode, and a second clutch apply relay valves that switches between a left half position that inputs a reverse input pressure to a discharge port and a right half position that inputs the reverse pressure to the discharge port are provided. The second clutch apply relay valve is set to the right half position during normal engine startup and locked based on the lock pressure by feeding the line pressure as a lock pressure and is set at the left half position that interrupts the lock pressure after the engine is restarted during all-solenoids-off.

    摘要翻译: 用于多级自动变速器的液压控制装置包括形成为常闭阀的线性电磁阀的电磁阀。 第一离合器施加继电器阀,其在全电磁阀关闭模式期间输出作为反向输入压力的前进范围压力,以及第二离合器施加继电器阀,其在输入反向输入压力的左半位置与排出口 并且提供将反向压力输入到排出口的右半部位置。 发动机正常启动期间,第二离合器作用继电器阀门设定在右半部位置,通过将管路压力作为锁定压力,基于锁定压力进行锁定,并设置在左侧位置,在发动机起动后中断锁定压力 在全电磁阀关闭期间重新启动。

    Solid-state imaging device
    7.
    发明申请
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US20060082669A1

    公开(公告)日:2006-04-20

    申请号:US11251882

    申请日:2005-10-18

    IPC分类号: H04N5/335

    摘要: Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

    摘要翻译: 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱,形成在表面的第二p型阱 的光电转换区域,并且其中形成信号扫描电路部分的信号存储部分,以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分,其部分放置在信号读出门的下面,适于将信号电荷的分组从存储部分传送到信号扫描电路部分,并且其部分位于读出栅极下方的最深处。

    Method of manufacturing a photodiode in a solid-state device
    8.
    发明授权
    Method of manufacturing a photodiode in a solid-state device 失效
    在固态器件中制造光电二极管的方法

    公开(公告)号:US06194244B1

    公开(公告)日:2001-02-27

    申请号:US09109061

    申请日:1998-07-02

    IPC分类号: H01L2100

    CPC分类号: H01L27/14601 H01L27/14689

    摘要: The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation.

    摘要翻译: 固态图像传感器包括半导体衬底,形成在半导体衬底上的各个隔离有源区域内的多个光电转换部分,其中包括多个光电转换部分的单元电池和信号扫描电路的图像区域布置在 二维阵列形式和用于从图像拾取区域内的相应单位单元读取信号的信号线,其中各个光电转换部分通过至少两次离子注入形成。

    Solid state image sensor
    9.
    发明授权
    Solid state image sensor 有权
    固态图像传感器

    公开(公告)号:US6072206A

    公开(公告)日:2000-06-06

    申请号:US272339

    申请日:1999-03-19

    摘要: The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.

    摘要翻译: 本发明提供了一种固态图像传感器,其构造方式是,即使晶体管的阱的杂质浓度增加,结漏电流也不增加,因此再现图像的图像质量不是 恶化 在p型衬底上形成有用于光电转换部分的第一p型阱以及用于信号扫描电路部分的第二p型阱。 在第一和第二p型阱的表面部分分别形成第一和第二n型扩散层。 构成第二n型扩散层的复位晶体管的漏极和放大晶体管的漏极连接到电源线。 此外,作为n型扩散层的地址晶体管的源极连接到垂直信号线。 放大晶体管和地址晶体管的栅极形成在第二p型阱的表面上以预定间隔设置的第二n型扩散层之间。

    Solid-state imaging device
    10.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US08916917B2

    公开(公告)日:2014-12-23

    申请号:US13365627

    申请日:2012-02-03

    IPC分类号: H01L31/101 H01L27/146

    摘要: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

    摘要翻译: 根据一个实施例,固态成像装置包括由具有第一和第二表面的半导体衬底中的元件隔离区围绕的第一元件形成区域,元件形成区域中的第一表面上的上部元件隔离层, 在第二表面和上部元件隔离层之间的下部元件隔离层,元件形成区域中的第一光电二极管,元件形成区域中的浮动扩散以及设置在第一光电二极管和浮动扩散部之间的第一晶体管。 下部元件隔离层的侧表面比上部元件隔离层的侧表面更靠近晶体管。