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公开(公告)号：US07129538B2
公开(公告)日：2006-10-31
申请号：US10842008
申请日：2004-05-10
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul M. Farmwald , Brad Herner
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul M. Farmwald , Brad Herner
IPC分类号： H01L29/788
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
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2.发明授权Monolithic three dimensional array of charge storage devices containing a planarized surface 有权包含平坦化表面的电荷存储装置的单片三维阵列公开(公告)号：US06881994B2
公开(公告)日：2005-04-19
申请号：US09927648
申请日：2001-08-13
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
IPC分类号： H01L21/20 , H01L21/336 , H01L21/822 , H01L21/8246 , H01L21/8247 , H01L27/06 , H01L27/10 , H01L27/112 , H01L27/12 , H01L29/423 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L21/8242
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译： 提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。
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公开(公告)号：US20110156044A1
公开(公告)日：2011-06-30
申请号：US13027113
申请日：2011-02-14
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
IPC分类号： H01L29/786 , H01L29/78
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译： 提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。
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公开(公告)号：US20120223380A1
公开(公告)日：2012-09-06
申请号：US13468731
申请日：2012-05-10
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Petti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald , Brad Herner
IPC分类号： H01L29/788 , H01L21/336 , H01L29/792
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译： 提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。
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公开(公告)号：US20090173985A1
公开(公告)日：2009-07-09
申请号：US12320351
申请日：2009-01-23
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Peti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Andrew J. Walker , Christopher J. Peti , Igor G. Kouznetzov , Mark G. Johnson , Paul Michael Farmwald
IPC分类号： H01L29/792 , H01L29/788
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译： 提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。
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公开(公告)号：US08981457B2
公开(公告)日：2015-03-17
申请号：US13468731
申请日：2012-05-10
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Mark G. Johnson , Paul Michael Farmwald , Igor G. Kouznetzov
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Mark G. Johnson , Paul Michael Farmwald , Igor G. Kouznetzov
IPC分类号： H01L29/788 , H01L27/115 , G11C16/34 , H01L21/822 , H01L27/06 , H01L27/112 , H01L29/423 , H01L29/66 , H01L29/792 , H01L29/861 , H01L27/12
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
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公开(公告)号：US07825455B2
公开(公告)日：2010-11-02
申请号：US12320351
申请日：2009-01-23
申请人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Mark G. Johnson , Paul M. Farmwald , Igor G. Kouznetsov
发明人： Thomas H. Lee , Vivek Subramanian , James M. Cleeves , Mark G. Johnson , Paul M. Farmwald , Igor G. Kouznetsov
IPC分类号： H01L29/788
CPC分类号： H01L27/11582 , G11C16/0466 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C2211/5612 , H01L21/31053 , H01L21/76819 , H01L21/8221 , H01L23/528 , H01L23/5329 , H01L27/0688 , H01L27/112 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11558 , H01L27/11565 , H01L27/11568 , H01L27/11573 , H01L27/11578 , H01L27/1158 , H01L27/12 , H01L27/1203 , H01L29/0626 , H01L29/0661 , H01L29/16 , H01L29/1604 , H01L29/42324 , H01L29/42332 , H01L29/42364 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66825 , H01L29/66833 , H01L29/7391 , H01L29/78642 , H01L29/7881 , H01L29/7889 , H01L29/792 , H01L29/7926 , H01L29/861 , H01L29/8616
摘要： There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
摘要翻译： 提供了一种包括多个器件级的电荷存储器件的单片三维阵列，其中通过化学机械抛光将两个连续的器件级之间的至少一个表面平坦化。
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8.发明授权Vertically stacked field programmable nonvolatile memory and method of fabrication 有权垂直堆叠现场可编程非易失性存储器和制造方法公开(公告)号：US08208282B2
公开(公告)日：2012-06-26
申请号：US12899634
申请日：2010-10-07
IPC分类号： G11C11/36
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
摘要翻译： 提供了一种存储单元，其包括第一导体，第二导体，能够提供基本上单向电流的转向元件，以及与该转向元件串联耦合的状态变化元件。 状态改变元件能够保持编程状态，并且转向元件和状态改变元件彼此垂直对准。 还提供其他方面。
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9.发明申请VERTICALLY STACKED FIELD PROGRAMMABLE NONVOLATILE MEMORY AND METHOD OF FABRICATION 有权垂直堆叠现场可编程非易失性存储器和制造方法公开(公告)号：US20110019467A1
公开(公告)日：2011-01-27
申请号：US12899634
申请日：2010-10-07
IPC分类号： G11C11/00
CPC分类号： G11C17/06 , G11C11/5692 , G11C13/003 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2481 , H01L45/1233 , H01L45/16
摘要： A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
摘要翻译： 提供了一种存储单元，其包括第一导体，第二导体，能够提供基本上单向电流的转向元件，以及与该转向元件串联耦合的状态变化元件。 状态改变元件能够保持编程状态，并且转向元件和状态改变元件彼此垂直对准。 还提供其他方面。
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10.发明授权Vertically stacked field programmable nonvolatile memory and method of fabrication 有权垂直堆叠现场可编程非易失性存储器和制造方法公开(公告)号：US06185122B2
公开(公告)日：2001-02-06
申请号：US09469658
申请日：1999-12-22
IPC分类号： G11C1700
CPC分类号： H01L27/1021 , G11C11/5678 , G11C11/5692 , G11C13/003 , G11C17/16 , G11C2213/71 , G11C2213/76
摘要： A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
摘要翻译： 公开了一种非常高密度的现场可编程存储器。 阵列垂直地形成在衬底上方，使用几层，其各层包括垂直制造的存储单元。 N级阵列中的单元可以形成N + 1掩蔽步骤以及接触所需的掩蔽步骤。 自动对准技术的最大限度地使光刻限制最小化。 在一个实施例中，外围电路形成在硅衬底中，并且在衬底上方制造N电平阵列。
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