公开(公告)号：US20060145283A1

公开(公告)日：2006-07-06

申请号：US11030554

申请日：2005-01-06

申请人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard Stall

发明人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard Stall

IPC分类号： H01L27/095 ,  H01L21/338

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20060151868A1

公开(公告)日：2006-07-13

申请号：US11032666

申请日：2005-01-10

申请人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Boris Peres ,  Alex Ceruzzi

发明人： TingGang Zhu ,  Bryan Shelton ,  Marek Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Boris Peres ,  Alex Ceruzzi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3107 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/2076 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/43 ,  H01L2924/01006

摘要： A packaged semiconductor device, in particular a gallium nitride semiconductor structure including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of the lower semiconductor layer. The semiconductor structure includes a plurality of mesas projecting upwardly from the lower layer, each of the mesas including a portion of the upper layer and defining an upper contact surface separated form adjacent mesas by a portion of the lower layer surface. The device further includes a die mounting support, wherein the bottom surface of the die is attached to the top surface of the die mounting support; and a plurality of spaced external conductors extending from the support, at least once of said spaced external conductors having a bond wire post at one end thereof; with a bonding wire extending between the bond wire post and a contact region to the top surface of the plurality of mesas.

摘要翻译： 封装的半导体器件，特别是包括下半导体层和设置在下半导体层的一部分上的上半导体层的氮化镓半导体结构。 半导体结构包括从下层向上突出的多个台面，每个台面包括上层的一部分，并且限定由下层表面的一部分与相邻台面分开的上接触表面。 该装置还包括模具安装支撑件，其中模具的底表面附接到模具安装支撑件的顶表面; 以及从所述支撑件延伸的多个间隔开的外部导体，所述间隔开的外部导体中的至少一个在其一端具有接合线柱; 其中接合线在接合线柱和与多个台面的顶表面之间的接触区域之间延伸。

公开(公告)号：US20090035925A1

公开(公告)日：2009-02-05

申请号：US12249099

申请日：2008-10-10

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L21/425

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US07863172B2

公开(公告)日：2011-01-04

申请号：US12249099

申请日：2008-10-10

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L29/872 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20110101371A1

公开(公告)日：2011-05-05

申请号：US12930179

申请日：2010-12-30

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Rick Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Rick Stall

IPC分类号： H01L29/20

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US07436039B2

公开(公告)日：2008-10-14

申请号：US11030554

申请日：2005-01-06

申请人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

发明人： TingGang Zhu ,  Bryan S. Shelton ,  Marek K. Pabisz ,  Mark Gottfried ,  Linlin Liu ,  Milan Pophristic ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L23/58

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/475

摘要： A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

摘要翻译： 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层，其厚度介于1微米与6微米之间，设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度，以实现具有大于500伏特的击穿电压，超过1安培的电流容量和小于3伏特的正向电压的器件。

公开(公告)号：US20060076589A1

公开(公告)日：2006-04-13

申请号：US11079708

申请日：2005-03-14

申请人： Xiang Gao ,  Alex Ceruzzi ,  Steve Schwed ,  Linlin Liu ,  Mark Gottfried

发明人： Xiang Gao ,  Alex Ceruzzi ,  Steve Schwed ,  Linlin Liu ,  Mark Gottfried

IPC分类号： H01L31/113

CPC分类号： H01L31/02161 ,  H01L31/105

摘要： A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.

摘要翻译： PIN光电二极管，以及制造PIN光电二极管的方法，该光电二极管降低了介质分层并提高了器件可靠性。 该工艺通过在衬底上形成第一类型电极层而进行; 形成第一类型电极层的本征层; 在本征层上形成第二类型的电极层; 蚀刻第二类型电极层以限定台面形结构; 以及在所述台面形结构上沉积钝化材料。

公开(公告)号：US07439599B2

公开(公告)日：2008-10-21

申请号：US11079708

申请日：2005-03-14

申请人： Xiang Gao ,  Alex Ceruzzi ,  Steve Schwed ,  Linlin Liu ,  Mark Gottfried

发明人： Xiang Gao ,  Alex Ceruzzi ,  Steve Schwed ,  Linlin Liu ,  Mark Gottfried

IPC分类号： H01L31/00

CPC分类号： H01L31/02161 ,  H01L31/105

摘要： A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.

摘要翻译： PIN光电二极管，以及制造PIN光电二极管的方法，该光电二极管减少了介质分层并提高了器件的可靠性 该工艺通过在衬底上形成第一类型电极层而进行; 形成第一类型电极层的本征层; 在本征层上形成第二类型的电极层; 蚀刻第二类型电极层以限定台面形结构; 以及在所述台面形结构上沉积钝化材料。

公开(公告)号：US06902990B2

公开(公告)日：2005-06-07

申请号：US10114099

申请日：2002-04-02

申请人： Mark Gottfried ,  Michael G. Brown ,  Ivan Eliashevich ,  Robert F. Karlicek, Jr. ,  James E. Nering

发明人： Mark Gottfried ,  Michael G. Brown ,  Ivan Eliashevich ,  Robert F. Karlicek, Jr. ,  James E. Nering

IPC分类号： B23K26/073 ,  B23K26/40 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/46 ,  H01L21/78 ,  H01L33/00 ,  H01L21/406

CPC分类号： B23K26/0738 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L33/0095 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  Y10S438/94 ,  H01L2924/00

摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.

公开(公告)号：US06946313B2

公开(公告)日：2005-09-20

申请号：US10798770

申请日：2004-03-12

申请人： Mark Gottfried

发明人： Mark Gottfried

IPC分类号： H01L21/285 ,  H01L21/308 ,  H01L33/00 ,  H01L33/36 ,  H01L21/00 ,  H01L21/28

CPC分类号： H01L21/3081 ,  H01L21/28575 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/36 ,  H01L2933/0016

摘要： A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal. The mask has an opening so that the first region is covered by the mask and a second region of the structure is aligned with the opening in the mask. Metal aligned with the opening in the mask in the second region is then removed to form a first electrode overlying the first region of the semiconductor structure, and also revealing the top surface of the semiconductor structure in the second region. Material is then removed from the semiconductor structure aligned with opening in the second region to form a second electrode surface for a second electrode.

摘要翻译： 一种在半导体器件上制造电极的方法，包括在半导体结构的顶表面上沉积金属，并且通过在金属上形成掩模来限定用于第一电极的半导体结构的第一区域。 掩模具有开口，使得第一区域被掩模覆盖，并且结构的第二区域与掩模中的开口对准。 然后去除与第二区域中的掩模中的开口对准的金属，以形成覆盖半导体结构的第一区域的第一电极，并且还露出第二区域中的半导体结构的顶表面。 然后从与第二区域中的开口对准的半导体结构中去除材料，以形成用于第二电极的第二电极表面。