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    Process for producing metal thin films by ALD
    1.
    发明授权
    Process for producing metal thin films by ALD 有权
    ALD生产金属薄膜的工艺

    公开(公告)号：US06824816B2

    公开(公告)日：2004-11-30

    申请号：US10066315

    申请日：2002-01-29

    申请人： Titta Aaltonen ,  Petra Alén ,  Mikko Ritala ,  Markku Leskelä

    发明人： Titta Aaltonen ,  Petra Alén ,  Mikko Ritala ,  Markku Leskelä

    IPC分类号： B05D512

    CPC分类号： H01L21/7687 ,  B82Y25/00 ,  C23C16/18 ,  C23C16/45553 ,  G11B5/66 ,  G11B5/85 ,  H01F10/325 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3162 ,  H01L28/60

    摘要： The invention relates generally to processes for producing electrically conductive noble metal thin films on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.

    摘要翻译： 本发明一般涉及通过原子层沉积在衬底上制造导电贵金属薄膜的方法。 根据本发明的一个实施方案，具有表面的基底设置在反应室中，并将贵金属的气化前体脉冲进入反应室。 通过使蒸发的前体与基底的表面接触，在基底上不会形成不超过约金属前体的分子层。 在下一步骤中，在反应室中提供含分子氧气体的脉冲，其中氧气与基板上的前体反应。 因此，可以通过利用金属前体和氧之间的反应来沉积高质量的金属薄膜。 在一个实施例中，在具有高纵横比通孔和沟槽，局部高仰角区域或使表面粗糙的其它类似表面结构的结构中沉积导电层。

    Process for producing metal thin films by ALD
    2.
    发明授权
    Process for producing metal thin films by ALD 有权
    ALD生产金属薄膜的工艺

    公开(公告)号：US07220451B2

    公开(公告)日：2007-05-22

    申请号：US10916257

    申请日：2004-08-10

    申请人： Titta Aaltonen ,  Petra Alén ,  Mikko Ritala ,  Markku Leskelä

    发明人： Titta Aaltonen ,  Petra Alén ,  Mikko Ritala ,  Markku Leskelä

    IPC分类号： C23C16/40

    CPC分类号： H01L21/7687 ,  B82Y25/00 ,  C23C16/18 ,  C23C16/45553 ,  G11B5/66 ,  G11B5/85 ,  H01F10/325 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3162 ,  H01L28/60

    摘要： Electrically conductive noble metal thin films can be deposited on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction chamber. By contacting the vaporised precursor with the surface of the substrate, no more than about a molecular layer of the metal precursor is formed on the substrate. In a next step, a pulse of molecular oxygen-containing gas is provided in the reaction chamber, where the oxygen reacts with the precursor on the substrate. Thus, high-quality metal thin films can be deposited by utilising reactions between the metal precursor and oxygen. In one embodiment, electrically conductive layers are deposited in structures that have high aspect ratio vias and trenches, local high elevation areas or other similar surface structures that make the surface rough.

    摘要翻译： 导电性贵金属薄膜可通过原子层沉积沉积在衬底上。 根据本发明的一个实施方案，具有表面的基底设置在反应室中，并将贵金属的气化前体脉冲进入反应室。 通过使蒸发的前体与基底的表面接触，在基底上不会形成不超过约金属前体的分子层。 在下一步骤中，在反应室中提供含分子氧的气体脉冲，其中氧气与基板上的前体反应。 因此，可以通过利用金属前体和氧之间的反应来沉积高质量的金属薄膜。 在一个实施例中，在具有高纵横比通孔和沟槽，局部高仰角区域或使表面粗糙的其它类似表面结构的结构中沉积导电层。

    Method for preparing metal nitride thin films
    3.
    发明授权
    Method for preparing metal nitride thin films 有权
    制备金属氮化物薄膜的方法

    公开(公告)号：US06706115B2

    公开(公告)日：2004-03-16

    申请号：US10100500

    申请日：2002-03-15

    申请人： Markku Leskelä ,  Mikko Ritala ,  Petra Alén ,  Marika Juppo

    发明人： Markku Leskelä ,  Mikko Ritala ,  Petra Alén ,  Marika Juppo

    IPC分类号： C30B2814

    CPC分类号： C23C16/45553 ,  C23C16/34 ,  H01L21/28568

    摘要： Methods for producing metal nitride thin layers having low resistivity by means of atomic layer deposition processes comprising alternate surface reactions of metal and nitrogen source materials include using nitrogen source materials that have better reducing properties than ammonia and 1,1-dimethyl hydrazine. Suitable compounds for that purpose include those in which a hydrocarbon group bound to nitrogen, when dissociating in a homolytic manner, generates a radical that serves as a reducing agent and reacts further to generate atomic hydrogen. The nitride thin layers produced are especially suitable for use as diffusion barrier layers in integrated circuits.

    摘要翻译： 通过包括金属和氮源材料的交替表面反应的原子层沉积方法生产具有低电阻率的金属氮化物薄层的方法包括使用具有比氨和1,1-二甲基肼更好的还原性能的氮源材料。 用于此目的的合适的化合物包括当以均质方式解离时与氮结合的烃基产生用作还原剂并进一步反应以产生原子氢的基团。 生成的氮化物薄层特别适用于集成电路中的扩散阻挡层。

    Method of depositing rare earth oxide thin films
    6.
    发明授权
    Method of depositing rare earth oxide thin films 有权
    沉积稀土氧化物薄膜的方法

    公开(公告)号：US07498272B2

    公开(公告)日：2009-03-03

    申请号：US11024515

    申请日：2004-12-28

    申请人： Jaakko Niinistö ,  Matti Putkonen ,  Mikko Ritala ,  Petri Räisänen ,  Antti Niskanen ,  Markku Leskelä

    发明人： Jaakko Niinistö ,  Matti Putkonen ,  Mikko Ritala ,  Petri Räisänen ,  Antti Niskanen ,  Markku Leskelä

    IPC分类号： H01L21/44

    CPC分类号： C23C16/45553 ,  C23C16/40 ,  C23C16/405

    摘要： The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

    摘要翻译： 本发明涉及通过ALD方法沉积稀土氧化物薄膜，特别是钇，镧和氧化钆薄膜的方法，根据该方法，源化学品是环戊二烯基化合物或稀土金属，特别是钇，镧和 钆。 当沉积压力为1至50毫巴时，氧化钇的合适沉积温度为200至400℃。 当沉积压力在1至50毫巴之间时，氧化镧最合适的沉积温度为160至165℃。

    Methods for forming thin films comprising tellurium
    7.
    发明授权
    Methods for forming thin films comprising tellurium 有权
    用于形成包含碲的薄膜的方法

    公开(公告)号：US08372483B2

    公开(公告)日：2013-02-12

    申请号：US12163757

    申请日：2008-06-27

    申请人： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

    发明人： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

    IPC分类号： C23C16/06

    CPC分类号： C23C16/56 ,  C23C16/306 ,  C23C16/45525

    摘要： Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI3 replaces the zinc, thereby forming Sb2Te3 thin films. Ge—Te and Ge—Sb—Te films can also be made by providing Ge sources to ZnTe and Sb—Te thin films, respectively.

    摘要翻译： 提供了可控地形成Sb-Te，Ge-Te和Ge-Sb-Te薄膜的方法。 ALD工艺可用于沉积包含ZnTe的第一膜。 提供锑源化合物，如SbI3代替锌，从而形成Sb2Te3薄膜。 Ge-Te和Ge-Sb-Te薄膜也可以分别通过向ZnTe和Sb-Te薄膜提供Ge源。

    Method for coating inner surfaces of equipment
    8.
    发明授权
    Method for coating inner surfaces of equipment 有权
    涂装设备内表面的方法

    公开(公告)号：US06416577B1

    公开(公告)日：2002-07-09

    申请号：US09581020

    申请日：2000-06-07

    申请人： Tuomo Suntoloa ,  Markku Leskelä ,  Mikko Ritala

    发明人： Tuomo Suntoloa ,  Markku Leskelä ,  Mikko Ritala

    IPC分类号： C30B2502

    CPC分类号： C23C16/45525 ,  C23C16/045 ,  C23C16/46 ,  C30B35/00 ,  Y10T117/10

    摘要： This invention concerns a method for coating the inner surfaces of equipment with a layer of material. According to the invention, of the inner space of the equipment limited by the surfaces to be coated is at least partly closed, to said inner space pulses of at least two different reagents in gaseous phase are fed alternately and repeatedly and a layer of material is grown on the surfaces of the inner space according to ALE-technique by exposing the surfaces to the alternating surface reactions of the reagents. With the aid of the invention it is possible to coat pipes and tanks of desired size without using a separate growing equipment.

    摘要翻译： 本发明涉及用一层材料涂覆设备的内表面的方法。 根据本发明，受被涂覆表面限制的设备的内部空间至少部分地封闭，对于所述内部空间，气相中的至少两种不同试剂的脉冲被交替地和反复地进给，并且一层材料是 通过将表面暴露于试剂的交替表面反应，根据ALE技术在内部空间的表面上生长。 借助于本发明，可以在不使用单独的生长设备的情况下涂覆所需尺寸的管道和罐。

    Methods for forming conductive titanium oxide thin films
    10.
    发明授权
    Methods for forming conductive titanium oxide thin films 有权
    形成导电氧化钛薄膜的方法

    公开(公告)号：US08945675B2

    公开(公告)日：2015-02-03

    申请号：US12129609

    申请日：2008-05-29

    申请人： Viljami Pore ,  Mikko Ritala ,  Markku Leskelä

    发明人： Viljami Pore ,  Mikko Ritala ,  Markku Leskelä

    IPC分类号： C23C16/00 ,  C23C16/06 ,  C23C16/40 ,  C23C16/455 ,  H01G4/12 ,  H01G4/33 ,  H01L49/02

    CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  H01G4/1218 ,  H01G4/33 ,  H01L28/60 ,  H01L28/75

    摘要： The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.

    摘要翻译： 本公开涉及通过原子层沉积工艺沉积导电氧化钛膜。 通过包括氧化钛沉积循环和掺杂剂氧化物沉积循环的ALD工艺沉积无定形掺杂的氧化钛膜，随后退火以产生导电结晶锐钛矿膜。 还可以通过首先通过包括氮化钛沉积循环和掺杂氮化物沉积循环的ALD工艺沉积掺杂的氮化钛薄膜并随后氧化氮化物膜以形成掺杂的氧化钛膜来沉积掺杂的氧化钛膜。 掺杂的氧化钛膜可以用于例如电容器结构中。