公开(公告)号：US20070175394A1

公开(公告)日：2007-08-02

申请号：US11341093

申请日：2006-01-27

申请人： Toru Inagaki ,  Takahiro Shirahata ,  Takashi Yokoyama ,  Michihiro Sano ,  Naochika Horio

发明人： Toru Inagaki ,  Takahiro Shirahata ,  Takashi Yokoyama ,  Michihiro Sano ,  Naochika Horio

IPC分类号： C23C16/00

CPC分类号： C23C16/45514 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/4584 ,  C30B25/14 ,  C30B29/16

摘要： A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b. The apparatus further has first supply ports 11 and second supply ports 12, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply ports 11 and 12 are positioned outside the exhaust duct 7. This enables the source gases to react immediately near the substrate 5 so that high-quality crystal film formation can be performed on the substrate.

摘要翻译： 提供了一种成膜装置，其可以在到达装置内被处理的基板之前防止源气体一起反应，从而最小化来自基板的辐射热的影响，并使反应室中的气体行为更好地用于晶体膜形成。 该装置通过使第一源气体和第二源气体一起反应而在加热的基板5的表面上形成膜。 该装置具有处理室1，其中放置有基板5。 处理室1至少由基板5分成加热室1a和反应室1b，使得基板表面能够暴露于反应室1b中的源气体。 该装置还具有排气管7，排气可以排出。 排气管7面对暴露的基板表面并与反应室1b连接。 该装置还具有第一供应端口11和第二供应端口12，第一和第二源气体可以分别通过第一供应端口11和第二供应端口12独立地供应到基板表面上。 供给口11,12位于排气管7的外侧。 这使得源气体能够在基板5附近立即反应，从而可以在基板上进行高质量的晶体膜形成。

公开(公告)号：US07691203B2

公开(公告)日：2010-04-06

申请号：US11341093

申请日：2006-01-27

申请人： Toru Inagaki ,  Takahiro Shirahata ,  Takashi Yokoyama ,  Michihiro Sano ,  Naochika Horio

发明人： Toru Inagaki ,  Takahiro Shirahata ,  Takashi Yokoyama ,  Michihiro Sano ,  Naochika Horio

IPC分类号： C23C16/22 ,  H01L21/36 ,  C23C16/00

CPC分类号： C23C16/45514 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/4584 ,  C30B25/14 ,  C30B29/16

摘要： A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b. The apparatus further has first supply ports 11 and second supply ports 12, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply ports 11 and 12 are positioned outside the exhaust duct 7. This enables the source gases to react immediately near the substrate 5 so that high-quality crystal film formation can be performed on the substrate.

摘要翻译： 提供了一种成膜装置，其可以在到达装置内被处理的基板之前防止源气体一起反应，从而最小化来自基板的辐射热的影响，并使反应室中的气体行为更好地用于晶体膜形成。 该装置通过使第一源气体和第二源气体一起反应而在加热的基板5的表面上形成膜。 该装置具有处理室1，其中放置有基板5。 处理室1至少由基板5分成加热室1a和反应室1b，使得基板表面能够暴露于反应室1b中的源气体。 该装置还具有排气管7，排气可以排出。 排气管7面对暴露的基板表面并与反应室1b连接。 该装置还具有第一供应端口11和第二供应端口12，第一和第二源气体可以分别通过第一供应端口11和第二供应端口12独立地供应到基板表面上。 供给口11和12位于排气管7的外部。这使得源气体能够在基板5附近立即反应，从而可以在基板上进行高质量的晶体成膜。

公开(公告)号：US20100258830A1

公开(公告)日：2010-10-14

申请号：US12743330

申请日：2008-11-13

申请人： Yoshiyuki Ide ,  Hidenori Kamei ,  Isamu Yonekura ,  Kunihiko Obara ,  Koichi Nakahara ,  Kouji Nakatsu ,  Yoshirou Tooya ,  Toshirou Kitazono ,  Toshihide Maeda ,  Kenichi Koya ,  Takahiro Shirahata

发明人： Yoshiyuki Ide ,  Hidenori Kamei ,  Isamu Yonekura ,  Kunihiko Obara ,  Koichi Nakahara ,  Kouji Nakatsu ,  Yoshirou Tooya ,  Toshirou Kitazono ,  Toshihide Maeda ,  Kenichi Koya ,  Takahiro Shirahata

IPC分类号： H01L33/52 ,  H01L33/60 ,  H01L21/78

CPC分类号： H01L33/60 ,  H01L24/97 ,  H01L33/54 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/12035 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.

摘要翻译： 来自半导体发光元件的光在各个方向上行进。 因此，不能有效地利用沿着照明方向以外的方向行进的光。 已经提出了用于形成具有倾斜侧表面的半导体发光元件以及在倾斜侧表面上形成反射层的装置。 然而，由于通过蚀刻方法等形成倾斜表面，所以形成倾斜表面需要很长时间，并且难以控制倾斜表面。 作为这些问题的解决方案，将半导体发光元件放置在副安装座基板上并用密封剂密封，然后在相邻的半导体发光元件之间的部分中形成凹槽。 所形成的槽被反射材料填充，并且发光表面被抛光。 然后，将副安装座基板分割为各个半导体发光元件。 因此，可以获得在其侧表面具有反射层的半导体发光器件。

公开(公告)号：US09103028B2

公开(公告)日：2015-08-11

申请号：US13265193

申请日：2009-04-20

申请人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida ,  Shizuo Fujita ,  Naoki Kameyama

发明人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida ,  Shizuo Fujita ,  Naoki Kameyama

IPC分类号： C23C16/40 ,  C23C16/448

CPC分类号： C23C16/407 ,  C23C16/405 ,  C23C16/448 ,  C23C16/4486

摘要： The present invention aims at providing a method for forming a metal oxide film which can further improve the production efficiency while maintaining low resistance of a metal oxide film formed thereby. In the method for forming a metal oxide film of the present invention, a solution (4) containing a metallic element and ammonia (4a) is formed into a mist. Meanwhile, a substrate (2) is heated. Then, the solution (4) formed into a mist is supplied onto a first main surface of the substrate (2) being heated.

摘要翻译： 本发明旨在提供一种形成金属氧化物膜的方法，其可以进一步提高生产效率，同时保持由此形成的金属氧化物膜的低电阻。 在本发明的金属氧化物膜的形成方法中，含有金属元素和氨（4a）的溶液（4）形成为雾状。 同时，加热基板（2）。 然后，将形成为雾的溶液（4）供给到被加热的基板（2）的第一主面上。

公开(公告)号：US10351957B2

公开(公告)日：2019-07-16

申请号：US14384603

申请日：2012-03-28

申请人： Takahiro Shirahata ,  Hiroyuki Orita ,  Takahiro Hiramatsu

发明人： Takahiro Shirahata ,  Hiroyuki Orita ,  Takahiro Hiramatsu

IPC分类号： H01B1/08 ,  C23C18/12 ,  H01L31/18 ,  C23C18/14

摘要： In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

公开(公告)号：US10121931B2

公开(公告)日：2018-11-06

申请号：US13990641

申请日：2011-03-15

申请人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida

发明人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida

IPC分类号： B05B7/04 ,  C23C16/448 ,  C23C16/455 ,  H01L31/18 ,  B05B1/04 ,  B05B7/00

摘要： The present invention includes a mist generator that generates a mist of a raw material of a film to be formed, and a mist jet nozzle that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body having a hollow portion; a mist supply port that supplies the mist; a spout that jets the mist to the outside; a carrier gas supply port that supplies a carrier gas; and a shower plate having a plurality of holes formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space connected to the carrier gas supply port and a second space connected to the spout. The mist supply port is connected to the second space.

公开(公告)号：US08552444B2

公开(公告)日：2013-10-08

申请号：US12743330

申请日：2008-11-13

申请人： Yoshiyuki Ide ,  Hidenori Kamei ,  Isamu Yonekura ,  Kunihiko Obara ,  Koichi Nakahara ,  Kouji Nakatsu ,  Yoshirou Tooya ,  Toshirou Kitazono ,  Toshihide Maeda ,  Kenichi Koya ,  Takahiro Shirahata

发明人： Yoshiyuki Ide ,  Hidenori Kamei ,  Isamu Yonekura ,  Kunihiko Obara ,  Koichi Nakahara ,  Kouji Nakatsu ,  Yoshirou Tooya ,  Toshirou Kitazono ,  Toshihide Maeda ,  Kenichi Koya ,  Takahiro Shirahata

IPC分类号： H01L29/72

CPC分类号： H01L33/60 ,  H01L24/97 ,  H01L33/54 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/12035 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices. Thus, a semiconductor light-emitting device having a reflective layer on its side surfaces can be obtained.

摘要翻译： 来自半导体发光元件的光在各个方向上行进。 因此，不能有效地利用沿着照明方向以外的方向行进的光。 已经提出了用于形成具有倾斜侧表面的半导体发光元件以及在倾斜侧表面上形成反射层的装置。 然而，由于通过蚀刻方法等形成倾斜表面，所以形成倾斜表面需要很长时间，并且难以控制倾斜表面。 作为这些问题的解决方案，将半导体发光元件放置在副安装座基板上并用密封剂密封，然后在相邻的半导体发光元件之间的部分中形成凹槽。 所形成的槽被反射材料填充，并且发光表面被抛光。 然后，将副安装座基板分割为各个半导体发光元件。 因此，可以获得在其侧表面具有反射层的半导体发光器件。

公开(公告)号：US20120112187A1

公开(公告)日：2012-05-10

申请号：US13383766

申请日：2009-09-02

申请人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida ,  Shizuo Fujita ,  Naoki Kameyama ,  Toshiyuki Kawaharamura

发明人： Hiroyuki Orita ,  Takahiro Shirahata ,  Akio Yoshida ,  Shizuo Fujita ,  Naoki Kameyama ,  Toshiyuki Kawaharamura

IPC分类号： H01L29/24 ,  B05C5/00 ,  H01L21/36

CPC分类号： C23C18/1216 ,  C23C18/1258 ,  C23C18/1291 ,  H01G9/2031 ,  H01L29/7869 ,  H01L31/1884 ,  Y02E10/50

摘要： The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.

摘要翻译： 本发明的形成金属氧化物膜的方法可以提高生产效率，同时保持金属氧化物膜的低电阻。 本发明的形成金属氧化物膜的方法包括首先将含有金属元素和乙二胺的溶液雾化; 同时加热基材; 然后将雾化溶液供给到基板的第一主表面上。

公开(公告)号：US10016785B2

公开(公告)日：2018-07-10

申请号：US14131128

申请日：2011-09-13

申请人： Hiroyuki Orita ,  Takahiro Shirahata ,  Takahiro Hiramatsu

发明人： Hiroyuki Orita ,  Takahiro Shirahata ,  Takahiro Hiramatsu

IPC分类号： C23C16/40 ,  B05D3/04 ,  C23C16/18 ,  C23C16/448 ,  C23C16/452 ,  B05C5/00

CPC分类号： B05D3/0453 ,  B05C5/00 ,  B05D3/0466 ,  C23C16/18 ,  C23C16/40 ,  C23C16/4486 ,  C23C16/452

摘要： The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate (100) in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention.

公开(公告)号：US20150034885A1

公开(公告)日：2015-02-05

申请号：US14384603

申请日：2012-03-28

申请人： Takahiro Shirahata ,  Hiroyuki Orita ,  Takahiro Hiramatsu

发明人： Takahiro Shirahata ,  Hiroyuki Orita ,  Takahiro Hiramatsu

IPC分类号： C23C18/12 ,  H01B1/08 ,  C23C18/14

CPC分类号： C23C18/1216 ,  C23C18/1258 ,  C23C18/1291 ,  C23C18/1295 ,  C23C18/14 ,  H01B1/08 ,  H01L31/1884 ,  Y02E10/50

摘要： In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

摘要翻译： 在根据本发明的金属氧化物膜的制造方法中，将含有锌的溶液喷射到非真空下的基板上，然后将含有掺杂剂的掺杂剂溶液喷涂到基板上。 之后，对沉积的金属氧化物膜进行电阻降低处理。 供给到基板的掺杂剂的摩尔浓度相对于提供给基板的锌的摩尔浓度不小于预定值。