公开(公告)号：US4985109A

公开(公告)日：1991-01-15

申请号：US475889

申请日：1990-02-06

申请人： Toru Otsubo ,  Mitsuo Tokuda ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki ,  Kazuhiro Ohara ,  Hirohisa Usuami ,  Junzou Azuma

发明人： Toru Otsubo ,  Mitsuo Tokuda ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki ,  Kazuhiro Ohara ,  Hirohisa Usuami ,  Junzou Azuma

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32357

摘要： A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber. A slot plate functioning as an antenna is disposed in the cavity resonator in opposition to a surface of the substrate for enabling radiation of the resonated microwaves to the plasma processing chamber through the separation plate, the slot plate including at least one set of circumferentially extending slots for enabling radiation of resonated microwaves.

公开(公告)号：US5134965A

公开(公告)日：1992-08-04

申请号：US538150

申请日：1990-06-14

申请人： Mitsuo Tokuda ,  Junzou Azuma ,  Toru Otsubo ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki

发明人： Mitsuo Tokuda ,  Junzou Azuma ,  Toru Otsubo ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32

CPC分类号： C23C16/45502 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32247 ,  H01J37/32449 ,  H01J2237/3321

摘要： Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate.Further disclosed is a plasma processing apparatus and a method therefor, the apparatus comprising; a plasma chamber for maintaining plasma generated in the inside of the plasma chamber so as to perform plasma processing; a first microwave accumulating and intensifying cavity resonance chamber connected with the plasma chamber through a first slot plate; a second microwave accumulating and intensifying cavity resonance chamber connected with the first cavity resonance chamber through a second slot plate parallel to the first slot plate; and a microwave generator for leading a microwave into the second cavity resonance chamber through a waveguide.

摘要翻译： 公开了一种等离子体CVD装置及其方法，该装置包括：微波产生部分; 用于使从微波产生部供给的微波共振的同轴空腔谐振器; 设置在空腔谐振器的轴的下部的多个气体导入口和用于引入所提供的CVD气体的空腔谐振器的周壁部; 以及等离子体产生室，其中CVD气体通过气体引入入口进入等离子体发生室并使其均匀地流动到衬底的表面上受到微波在空腔谐振器中通过谐振强化并通过耦合辐射 使得产生均匀的等离子体，从而在衬底的表面上形成薄膜。 另外公开了一种等离子体处理装置及其方法，该装置包括： 等离子体室，用于保持等离子体室内部产生的等离子体，以进行等离子体处理; 通过第一槽板与等离子体室连接的第一微波积聚和增强腔共振腔; 第二微波积聚和增强腔谐振室，通过与第一槽板平行的第二槽板与第一空腔共振室连接; 以及微波发生器，用于通过波导将微波引导到第二腔谐振室。

公开(公告)号：US06507029B1

公开(公告)日：2003-01-14

申请号：US09255700

申请日：1999-02-23

申请人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

发明人： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

IPC分类号： H01J3730

CPC分类号： B82Y15/00 ,  H01J37/026 ,  H01J2237/0047 ,  H01J2237/28

摘要： In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

摘要翻译： 在用于观察，检查，处理或分析作为基板或样品的半导体晶片的电子粒子机中，将光源安装在准备室中。 使用静电用卡盘夹住半导体晶片的夹持台设置有用于连接到地面的部件，使得它们与夹持的半导体晶片接触。 在观察，检查，处理或分析之后释放使用静电的卡盘后，用来自光源的光照射半导体晶片的表面和用于连接到地球的部分。 这为半导体晶片的表面提供导电性，从而通过用于连接到地球的部件从表面去除积聚在半导体晶片上的电荷。

公开(公告)号：US06344115B1

公开(公告)日：2002-02-05

申请号：US09417996

申请日：1999-10-13

申请人： Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

发明人： Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

IPC分类号： C23C1400

CPC分类号： H01J37/18 ,  C23C16/26 ,  H01J2237/317

摘要： A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.

摘要翻译： 使用改进的带电粒子束工艺的图案形成方法和带电粒子束处理系统，当工件被排出到大气中之后，通过被吸收并附着在工件表面上的反应气体有效地防止工件的腐蚀 图案形成。 带电粒子束处理系统作为主要部件包括设置有离子束光学系统的离子束室，设置有气体喷嘴的处理室，反应气体通过该喷嘴吹向工件，负载锁定室通过 一个闸阀到处理室。 负载锁定室能够产生用于通过溅射处理工件的表面的惰性气体的等离子体。 在通过反应性处理在处理室中形成图案之后，工件返回到装载锁定室，包括在反应气体的环境中用带电粒子束照射工件的表面，并且对工件进行 等离子体处理，以在图案形成期间去除被工件吸附的反应气体并附着到工件上。

公开(公告)号：US06587581B1

公开(公告)日：2003-07-01

申请号：US09006371

申请日：1998-01-12

申请人： Yukio Matsuyama ,  Yuji Takagi ,  Takashi Hiroi ,  Maki Tanaka ,  Asahiro Kuni ,  Junzou Azuma ,  Shunji Maeda ,  Chie Shishido

发明人： Yukio Matsuyama ,  Yuji Takagi ,  Takashi Hiroi ,  Maki Tanaka ,  Asahiro Kuni ,  Junzou Azuma ,  Shunji Maeda ,  Chie Shishido

IPC分类号： G06K900

CPC分类号： G06T7/001 ,  G01N21/8851 ,  G01N21/95607 ,  G06T5/008 ,  G06T5/40 ,  G06T5/50 ,  G06T7/30 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/2817

摘要： The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.

摘要翻译： 本发明提供了一种扫描电子显微镜（SEM）或光学检查方法和装置，其校正比较图像之间的亮度差异，从而能够以高可靠性检测精细缺陷而不引起任何假缺陷检测。 根据本发明，将要被比较的两个检测图像中包含的基本上相同的图案的亮度值以这样的方式进行校正：即使在没有缺陷的部分中可能存在亮度差 ，亮度差降低到这样的程度，从而可以将其识别为正常部分。 此外，预先提供校正量的限制，并且不执行超过该限制值的校正。 这样的校正可以防止由于缺陷而将不允许的亮度差错误地识别为缺陷，而不会因为缺陷而忽略亮度的很大差异。

公开(公告)号：US5342448A

公开(公告)日：1994-08-30

申请号：US40842

申请日：1993-03-31

申请人： Yuuichi Hamamura ,  Satoshi Haraichi ,  Akira Shimase ,  Junzou Azuma ,  Fumikazu Itoh ,  Toshio Yamada ,  Yasuhiro Koizumi ,  Michinobu Mizumura

发明人： Yuuichi Hamamura ,  Satoshi Haraichi ,  Akira Shimase ,  Junzou Azuma ,  Fumikazu Itoh ,  Toshio Yamada ,  Yasuhiro Koizumi ,  Michinobu Mizumura

IPC分类号： H01J37/244 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/317 ,  H01J37/244 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/2443 ,  H01J2237/24435 ,  H01J2237/304 ,  H01J2237/31744

摘要： A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

摘要翻译： 使用带电束和反应性气体处理样品的方法以及使用其的系统的方法和方法，所述方法和系统能够执行反应性蚀刻和使用带电粒子检测器进行的束辅助沉积，其不会由于 反应气体。 该系统设计成使得以带电粒子检测器的形式提供快门机构，并且可以抽出用于容纳带电粒子检测器的室。 在样品的观察中，带电粒子检测器被打开以打开快门机构，并且在样品的处理中，带电粒子检测器被关闭或离开以关闭快门机构以将内部 带电粒子检测器。

公开(公告)号：US5825035A

公开(公告)日：1998-10-20

申请号：US745657

申请日：1996-11-08

申请人： Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

发明人： Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

IPC分类号： H01J37/317

CPC分类号： H01J37/3056 ,  H01J2237/0802 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/0817 ,  H01J2237/31732 ,  H01J2237/31742

摘要： A processing method using a plasma ion source for generating a focused ion beam, characterized by covering, with an insulator, an inner wall of a plasma holding vessel excluding a reference electrode for applying a voltage to a plasma and an ion extraction electrode for extracting ions from the plasma, and employing means of continuously controlling the absolute value of an ion beam current in a range of from 1 to 10 .mu.A by changing the absolute value of an ion extraction voltage applied between the reference electrode and the ion extraction electrode in a range of from 0 to 100 V; and an apparatus for carrying out the processing method. This is advantageous in stabilizing the ion beam current and in preventing the ion beam from being made dim even when the current value of the ion beam is changed.

摘要翻译： 一种使用等离子体离子源产生聚焦离子束的处理方法，其特征在于，用绝缘体覆盖除了用于向等离子体施加电压的参考电极之外的等离子体保持容器的内壁和用于提取离子的离子提取电极 并且通过改变在参考电极和离子提取电极之间施加的离子提取电压的绝对值，在1至10μA的范围内连续地控制离子束电流的绝对值的方法， 范围为0〜100V; 以及用于执行处理方法的装置。 这有利于稳定离子束电流，并且即使当离子束的电流值改变时也防止离子束变暗。

公开(公告)号：US5583344A

公开(公告)日：1996-12-10

申请号：US595993

申请日：1996-02-09

申请人： Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

发明人： Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

IPC分类号： G01Q30/20 ,  G01Q60/52 ,  H01J37/305 ,  H01J37/317

CPC分类号： H01J37/3056 ,  H01J2237/0802 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/0817 ,  H01J2237/31732 ,  H01J2237/31742 ,  H01J2237/31749

摘要： A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.

公开(公告)号：US5439763A

公开(公告)日：1995-08-08

申请号：US22909

申请日：1993-02-26

申请人： Akira Shimase ,  Junzou Azuma ,  Satoshi Haraichi ,  Fumikazu Itoh ,  Yasuhiro Koizumi

发明人： Akira Shimase ,  Junzou Azuma ,  Satoshi Haraichi ,  Fumikazu Itoh ,  Yasuhiro Koizumi

IPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/72 ,  G03F9/00

CPC分类号： G03F1/72 ,  G03F1/26 ,  G03F1/30

摘要： An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light intercepting pattern. An etching stopper film which transmits the exposure light is provided between said phase shifter and said light intercepting pattern and for correction of the mask a focused ion beam is utilized for removal of defects by the phase shifter.

摘要翻译： 一种用于投影光学系统的光学掩模和一种校正掩模的方法，其中掩模包括形成在透明基板上的遮光图案和用于改变设置在遮光图案的预定开口处的曝光光的相位的移相器。 在所述移相器和所述遮光图案之间设置有曝光光的蚀刻停止膜，并且为了校正掩模，使用聚焦离子束来消除由移相器产生的缺陷。

公开(公告)号：US5223109A

公开(公告)日：1993-06-29

申请号：US766328

申请日：1991-09-27

申请人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Junzou Azuma

发明人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Junzou Azuma

IPC分类号： B23K15/00 ,  H01J37/305

CPC分类号： H01J37/3056 ,  H01J2237/202 ,  H01J2237/31

摘要： There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this method is also disclosed. In the formation of a product having a non-circular cross-section, when the amount of application of the ion beam is kept constant, the rotational angular velocity of the workpiece is varied in accordance with the rotational angular position of the workpiece. On the other hand, when the rotational angular velocity of the workpiece is kept constant, the amount of application of the ion beam is varied. When it is difficult to align the axis of the workpiece with the axis of rotation of a workpiece holder, the focused ion beam is applied in accordance with the oscillation of the workpiece.

摘要翻译： 公开了使用离子束或聚焦离子束来处理非常小尺寸的旋转构件的旋转工件的离子束处理方法。 还公开了用于执行该方法的装置。 在形成具有非圆形横截面的产品时，当离子束的施加量保持恒定时，工件的旋转角速度根据工件的旋转角度位置而变化。 另一方面，当工件的旋转角速度保持恒定时，离子束的施加量变化。 当难以将工件的轴线与工件保持架的旋转轴对齐时，根据工件的振动施加聚焦离子束。