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公开(公告)号：US09324600B2
公开(公告)日：2016-04-26
申请号：US13497937
申请日：2010-09-21
CPC分类号： H01L21/6831 , C23C14/358 , C23C14/50 , H01J37/321 , H01J37/32577 , H01J37/3405
摘要： A mounting table structure includes a mounting table body, made of a conductive material, for mounting thereon the processing target object and serving as an electrode; a base table, made of a conductive material, disposed below the mounting table body with a gap therebetween in a state insulated from the mounting table body; a support column, connected to the ground side, for supporting the base table; a high frequency power supply line, connected to the mounting table body, for supplying a high frequency bias power to the mounting table body; and a power stabilization capacitor provided between the ground side and a hot side to which the high frequency bias power is applied. Here, an electrostatic capacitance of the power stabilization capacitor is set to be larger than an electrostatic capacitance of a stray capacitance between the mounting table body and the protective cover member.
摘要翻译： 安装台结构包括：由导电材料制成的安装台本体，用于在其上安装加工对象物体并用作电极; 由导电材料制成的底座，在与安装台体绝缘的状态下设置在安装台主体下面，其间具有间隙; 连接到地面的支撑柱，用于支撑基座; 连接到安装台主体的高频电源线，用于向安装台主体提供高频偏置电力; 以及设置在施加高频偏置功率的接地侧和热侧之间的功率稳定电容器。 这里，功率稳定电容器的静电电容被设定为大于安装台体和保护盖构件之间的杂散电容的静电电容。
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公开(公告)号：US20130001076A1
公开(公告)日：2013-01-03
申请号：US13497937
申请日：2010-09-21
CPC分类号： H01L21/6831 , C23C14/358 , C23C14/50 , H01J37/321 , H01J37/32577 , H01J37/3405
摘要： A mounting table structure includes a mounting table body, made of a conductive material, for mounting thereon the processing target object and serving as an electrode; a base table, made of a conductive material, disposed below the mounting table body with a gap therebetween in a state insulated from the mounting table body; a support column, connected to the ground side, for supporting the base table; a high frequency power supply line, connected to the mounting table body, for supplying a high frequency bias power to the mounting table body; and a power stabilization capacitor provided between the ground side and a hot side to which the high frequency bias power is applied. Here, an electrostatic capacitance of the power stabilization capacitor is set to be larger than an electrostatic capacitance of a stray capacitance between the mounting table body and the protective cover member.
摘要翻译： 安装台结构包括：由导电材料制成的安装台本体，用于在其上安装加工对象物体并用作电极; 由导电材料制成的底座，在与安装台体绝缘的状态下设置在安装台主体下面，其间具有间隙; 连接到地面的支撑柱，用于支撑基座; 连接到安装台主体的高频电源线，用于向安装台主体提供高频偏置电力; 以及设置在施加高频偏置功率的接地侧和热侧之间的功率稳定电容器。 这里，功率稳定化电容器的静电电容被设定为大于安装台体和保护盖构件之间的杂散电容的静电电容。
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3.发明申请公开(公告)号：US20120247949A1
公开(公告)日：2012-10-04
申请号：US13433527
申请日：2012-03-29
申请人： Takashi SAKUMA , Tadahiro Ishizaka , Tatsuo Hatano , Shiro Hayashi , Toshiaki Fujisato , Hiroyuki Yokohara , Hiroyuki Toshima
发明人： Takashi SAKUMA , Tadahiro Ishizaka , Tatsuo Hatano , Shiro Hayashi , Toshiaki Fujisato , Hiroyuki Yokohara , Hiroyuki Toshima
IPC分类号： C23C14/34
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/185 , C23C14/345 , C23C14/5833 , C23C14/5873 , C23C14/5893 , C23C16/509 , H01L21/76843 , H01L21/76865 , H01L21/76873
摘要： A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.
摘要翻译： 一种成膜方法，包括通过在处理室中产生电感耦合等离子体，同时在处理室中引入等离子体产生气体，其中衬底设置在放置台上，通过向金属提供DC电力，在目标衬底上沉积金属薄膜 来自直流电源的目标，以及通过对放置台应用高频偏压。 再溅射方法包括：通过停止来自直流电源的电力供给，通过停止产生电感耦合等离子体，并将高频偏压施加到放置台，同时将等离子体产生气体引入到 所述处理室在所述处理室中形成电容耦合的等离子体，并且通过将所述等离子体产生气体的离子吸附到沉积金属薄膜的目标衬底上。
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公开(公告)号：US08592712B2
公开(公告)日：2013-11-26
申请号：US12725902
申请日：2010-03-17
申请人： Toshiaki Fujisato , Ronald Nasman
发明人： Toshiaki Fujisato , Ronald Nasman
CPC分类号： H01L21/67109 , C23C14/50 , H01J37/34 , H01L21/68785
摘要： A mounting table structure for mounting thereon an object to be processed to form a metal-containing thin film on the object includes a ceramic mounting table in which a chuck electrode and a heater are embedded, and a metal flange connected to a bottom surface of a peripheral portion of the mounting table. The mounting table structure further includes a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein, and a metal seal member interposed between the flange and the base.
摘要翻译： 用于在其上安装待加工物体以在物体上形成含金属的薄膜的安装台结构包括陶瓷安装台，其中嵌入有卡盘电极和加热器，并且金属凸缘连接到 安装台的周边部分。 安装台结构还包括金属基座，其通过螺钉连接到凸缘并且具有用于使冷却剂流动的冷却剂路径和插入在凸缘和基座之间的金属密封构件。
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5.发明申请Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开用于热和等离子体增强气相沉积的装置和操作方法公开(公告)号：US20070116873A1
公开(公告)日：2007-05-24
申请号：US11281376
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
CPC分类号： C23C16/45517 , C23C16/4401 , C23C16/4412 , H01J37/32082 , H01J37/32495 , H01J37/32522
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.
摘要翻译： 一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度， 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。
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6.发明申请Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开用于热和等离子体增强气相沉积的装置和操作方法公开(公告)号：US20070116872A1
公开(公告)日：2007-05-24
申请号：US11281372
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
CPC分类号： C23C16/4585 , C23C16/12 , C23C16/14 , C23C16/16 , C23C16/18 , C23C16/303 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/5096 , H01J37/32082 , H01J37/32495 , H01J2237/2001
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space. The system includes a sealing assembly configured to impede gas flow between the process space and the transfer space during translation of the substrate within the process space.
摘要翻译： 一种在衬底上进行气相沉积的方法，计算机可读介质和系统，其将衬底处理在与所述处理系统的传送空间真空隔离的处理系统的处理空间中，在第一位置或 在处理空间中的第二位置，同时保持与传送空间的真空隔离，并且在第一位置或第二位置处将材料沉积在所述基板上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 到所述第二组件并且被配置为在所述传送空间中的第一位置和所述处理空间中的第二位置之间支撑和平移所述衬底。 该系统包括密封组件，该密封组件构造成在工艺空间内的衬底平移过程中阻碍工艺空间与传送空间之间的气体流动。
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公开(公告)号：US08194384B2
公开(公告)日：2012-06-05
申请号：US12178327
申请日：2008-07-23
IPC分类号： H01L21/683 , H01T23/00
CPC分类号： H02N13/00
摘要： An electrostatic chuck configured for high temperature reduced-pressure processing is described. The electrostatic chuck comprises a chuck body having an electrostatic clamp electrode and an optional heating element, and a heat sink body having a heat transfer surface spaced in close relationship with an inner surface of the chuck body, wherein the heat sink body is configured to remove heat from the chuck body due to the close proximity of the inner surface and the heat transfer surface. The electrostatic chuck further comprises a table assembly configured to support the chuck body and the heat sink body, and an expansion joint disposed between the chuck body and the table assembly, and configured to sealably join the chuck body to the table assembly while accommodating for differential thermal expansion of the chuck body and the table assembly.
摘要翻译： 描述了构造用于高温减压处理的静电卡盘。 静电卡盘包括具有静电夹持电极和任选的加热元件的卡盘体，以及具有与卡盘主体的内表面间隔开的传热表面的散热体，其中，散热体被构造成去除 由于内表面和传热表面的紧密接触，来自卡盘体的热量。 所述静电吸盘还包括配置成支撑所述卡盘主体和所述散热体主体的工作台组件，以及设置在所述卡盘主体和所述工作台组件之间的伸缩接头，并且构造成将所述卡盘主体可密封地连接到所述工作台组件，同时容纳差速器 卡盘主体和工作台组件的热膨胀。
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公开(公告)号：US20100244350A1
公开(公告)日：2010-09-30
申请号：US12725902
申请日：2010-03-17
申请人： Toshiaki Fujisato , Ronald Nasman
发明人： Toshiaki Fujisato , Ronald Nasman
IPC分类号： B23Q3/00
CPC分类号： H01L21/67109 , C23C14/50 , H01J37/34 , H01L21/68785
摘要： A mounting table structure for mounting thereon an object to be processed to form a metal-containing thin film on the object includes a ceramic mounting table in which a chuck electrode and a heater are embedded, and a metal flange connected to a bottom surface of a peripheral portion of the mounting table. The mounting table structure further includes a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein, and a metal seal member interposed between the flange and the base.
摘要翻译： 用于在其上安装待加工物体以在物体上形成含金属的薄膜的安装台结构包括陶瓷安装台，其中嵌入有卡盘电极和加热器，并且金属凸缘连接到 安装台的周边部分。 安装台结构还包括金属基座，其通过螺钉连接到凸缘并且具有用于使冷却剂流动的冷却剂路径和插入在凸缘和基座之间的金属密封构件。
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公开(公告)号：US20090242383A1
公开(公告)日：2009-10-01
申请号：US12059649
申请日：2008-03-31
IPC分类号： C23C14/34
CPC分类号： C23C14/50 , H01J37/32623 , H01J37/34 , H01J37/3441
摘要： An IPVD source assembly and method is provided for supplying and ionizing material for coating a semiconductor wafer. The assembly includes a process space containing a plasma and an electrostatic chuck moveable in to and out of the process space. The chuck is configured to support the semiconductor wafer. The assembly further includes a first shield in electrical communication with a table and a second shield. The first shield is configured to shield at least a portion of the electrostatic chuck when the chuck is in the process space and the second shield is configured to shield at least a portion of a space below the electrostatic chuck and the process space. A conducting element electrically connects the second shield to the table to substantially prevent a formation of a second plasma in the space below the electrostatic chuck and the process space.
摘要翻译： 提供IPVD源组件和方法用于供给和电离用于涂覆半导体晶片的材料。 该组件包括含有等离子体的处理空间和可移入和移出工艺空间的静电吸盘。 卡盘构造成支撑半导体晶片。 组件还包括与桌子和第二屏蔽件电连通的第一屏蔽件。 第一屏蔽被配置为当卡盘在处理空间中时屏蔽静电卡盘的至少一部分，并且第二屏蔽构造成屏蔽静电卡盘和处理空间下方的空间的至少一部分。 导电元件将第二屏蔽件电连接到工作台，以基本上防止在静电卡盘和处理空间下方的空间中形成第二等离子体。
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公开(公告)号：US20080087220A1
公开(公告)日：2008-04-17
申请号：US10581522
申请日：2004-12-02
申请人： Toshiaki Fujisato
发明人： Toshiaki Fujisato
IPC分类号： C23C16/00
CPC分类号： C23C16/5096 , H01J37/32082 , H01J37/32623 , H01J37/32697
摘要： A susceptor (16) on which a predetermined target wafer (W) is mounted, and a support table (15) for supporting the susceptor (16) are provided at generally the center in a chamber (2). A process gas supply device (4) supplies a process gas for processing the wafer (W) into the chamber (2). A first high-frequency power source (5) and a second high-frequency power source (7) generate plasma of the supplied process gas by applying predetermined high-frequency voltages respectively, and process the wafer (W). A dike (18) having a grounded conductive member (18a) is provided around the support table (15) and the susceptor (16), and the generated plasma is thereby confined in the area above the wafer (W) mounted on the susceptor (16).
摘要翻译： 设置有预定的目标晶片（W）的基座（16）和用于支撑基座（16）的支撑台（15）设置在室（2）的大致中央处。 工艺气体供给装置（4）将用于将晶片（W）加工到处理室（2）中的处理气体。 第一高频电源（5）和第二高频电源（7）分别通过施加预定的高频电压来产生所提供的处理气体的等离子体，并处理晶片（W）。 在支撑台（15）和基座（16）周围设置具有接地导电部件（18a）的堤（18），由此产生的等离子体被限制在安装在基座上的晶片（W）上方的区域 （16）。
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