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公开(公告)号：US08093083B1
公开(公告)日：2012-01-10
申请号：US13029416
申请日：2011-02-17
申请人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
发明人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.
摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法。 该器件包括包含氮化物半导体的晶体层。 晶体层含有In和Ga原子。 该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。 晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。 第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。 （1-1 / xv）/（1-1 / xs）小于0.1。
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公开(公告)号：US08610106B2
公开(公告)日：2013-12-17
申请号：US13213821
申请日：2011-08-19
IPC分类号： H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。 第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。 阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。
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公开(公告)号：US20120138890A1
公开(公告)日：2012-06-07
申请号：US13213821
申请日：2011-08-19
IPC分类号： H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。 第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。 阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。
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公开(公告)号：US20120032209A1
公开(公告)日：2012-02-09
申请号：US13032934
申请日：2011-02-23
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/04 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.
摘要翻译： 根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。 多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。 发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比 第三组元素在第二层。 多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。 多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。
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5.发明授权Crystal growth method for nitride semiconductor having a multiquantum well structure 有权具有多量子阱结构的氮化物半导体的晶体生长方法公开(公告)号：US08728237B2
公开(公告)日：2014-05-20
申请号：US12874594
申请日：2010-09-02
IPC分类号： C30B25/02
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译： 一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0
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公开(公告)号：US20110197808A1
公开(公告)日：2011-08-18
申请号：US12874594
申请日：2010-09-02
IPC分类号： C30B25/10
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译： 某些实施例提供了一种用于氮化物半导体的晶体生长方法，其包括：在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0
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公开(公告)号：US08525197B2
公开(公告)日：2013-09-03
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L31/072
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。 发光部分包括多个发光层。 每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。 每个阱层区域具有常见的An In组成比。 每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。
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公开(公告)号：US20110204394A1
公开(公告)日：2011-08-25
申请号：US12875503
申请日：2010-09-03
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0
摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0
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公开(公告)号：US08399896B2
公开(公告)日：2013-03-19
申请号：US12875503
申请日：2010-09-03
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0
摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0
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10.发明授权Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer 有权氮化物半导体晶片，氮化物半导体器件以及氮化物半导体晶片的制造方法公开(公告)号：US09397167B2
公开(公告)日：2016-07-19
申请号：US13729713
申请日：2012-12-28
CPC分类号： H01L29/2003 , H01L21/02104 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/0649 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.
摘要翻译： 氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。 硅衬底具有主表面。 堆叠的多层单元设置在主表面上。 堆叠的多层单元包括N个缓冲层。 缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。 第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。 第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。 对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。 含硅单元设置在堆叠的多层单元上。 上层单元设置在含硅单元上。
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