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    Method for preparing eutectic ceramics
    4.
    发明授权
    Method for preparing eutectic ceramics 失效
    制备共晶陶瓷的方法

    公开(公告)号：US06592798B1

    公开(公告)日：2003-07-15

    申请号：US09980738

    申请日：2002-04-08

    申请人： Mamoru Omori ,  Toshio Hirai ,  Masao Tokita

    发明人： Mamoru Omori ,  Toshio Hirai ,  Masao Tokita

    IPC分类号： C04B3332

    CPC分类号： C04B35/645 ,  C04B35/117 ,  C04B35/44 ,  C04B35/50 ,  C04B35/64

    摘要： A method for advantageously producing sintered eutectic ceramics having a homogenous and dense structure, in particular, a eutectic containing a rare earth aluminate compound. The method allows eutectic powder of alumina and a rare earth aluminate compound to stand at a temperature of 1300-1700° C. for 1-120 minutes under vacuum or in an non-oxidative atmosphere under a pressure of 5-100 MPa using a spark plasma sintering apparatus, thereby causing crystal growth to occur to obtain a rare earth aluminate eutectic structure crystal.

    摘要翻译： 一种有利地生产具有均匀和致密结构的烧结共晶陶瓷的方法，特别是含有稀土铝酸盐化合物的共晶体。 该方法允许氧化铝和稀土铝酸盐化合物的共晶粉末在真空下或在非氧化性气氛中在5-100MPa的压力下在1300-1700℃的温度下放置1-120分钟，使用火花 等离子体烧结装置，从而引起晶体生长以获得稀土铝酸盐共晶结构晶体。

    Method for replacement of existing pipes and device for carrying out the method
    5.
    发明授权
    Method for replacement of existing pipes and device for carrying out the method 失效
    现有管道更换方法及其实施方法

    公开(公告)号：US6149346A

    公开(公告)日：2000-11-21

    申请号：US59298

    申请日：1998-04-14

    申请人： Nobuhisa Takamatsu ,  Takayuki Kurobe ,  Toshio Hirai ,  Toshio Akesaka

    发明人： Nobuhisa Takamatsu ,  Takayuki Kurobe ,  Toshio Hirai ,  Toshio Akesaka

    IPC分类号： F16L1/024 ,  E21B7/30 ,  F16L1/00 ,  F16L55/165 ,  F16L55/18

    CPC分类号： E21B7/30 ,  F16L1/00 ,  F16L55/1658

    摘要： A drawing device 4 is mounted in a drawing shaft 3, and pipe replacement device A connected with new pipes is arranged on the side of starting shaft 2, wherein the drawing device 4 and the pipe replacement device A is connected through pull-rods 5 inserted into existing pipes with each other. The pipe replacement device A is comprised of a cutting part 11 including cutter bodies 14 (shanks 14a to 14i) arranged in the axial direction and at angular intervals in the circumferential direction, an expanding part 12 having expanding rollers 18a to 18f, and a connecting part 13. Each cutter body 14 has a plurality of cutting edges, wherein distances between the respective cutting edges and the center of the circle become larger in order from the forward side toward the backward side. While the pipe replacement device A is traveled in the inside of cast iron pipes, the inner wall of cast iron pipes is cut by the cutter bodies 14 to form grooves. Splitting of existing pipes into arc-shaped pieces 1a is made starting from the grooves. Arc-shaped pieces 1a are pressed into the ground, by which a tunnel 7 surrounded by arc-shaped pieces 1a and portions of consolidated earth is formed, while new pipes 6 are introduced into the tunnel 7, and besides the new pipes 6 are protected by protective armors formed of arc-shaped pieces 1a.

    摘要翻译： 牵引装置4安装在牵引轴3中，在起动轴2的侧面配置有与新管连接的管道更换装置A，其中，拉拔装置4和管道更换装置A通过插入的拉杆5连接 进入现有的管道。 管道更换装置A包括切削部11，该切削部11包括沿轴向布置并且沿圆周方向成角度间隔的切割器主体14（柄14a至14i），具有扩展辊18a至18f的扩展部12和连接 每个切割器主体14具有多个切割边缘，其中各个切割边缘和圆心之间的距离从前侧朝向后侧依次变大。 当管路更换装置A行进在铸铁管内部时，铸铁管的内壁被切割体14切断，形成槽。 从凹槽开始将现有管道分割成弧形件1a。 弧形片1a被压入地面，由弧形片1a围绕的隧道7和固结土的一部分形成，而新的管道6被引入隧道7中，并且新的管道6被保护 由弧形件1a形成的防护装甲。

    Super hard highly pure silicon nitrides
    7.
    发明授权
    Super hard highly pure silicon nitrides 失效
    超硬的高纯氮化硅

    公开(公告)号：US4312924A

    公开(公告)日：1982-01-26

    申请号：US129218

    申请日：1980-03-11

    申请人： Toshio Hirai ,  Koichi Niihara

    发明人： Toshio Hirai ,  Koichi Niihara

    IPC分类号： C01B21/068 ,  C04B35/584 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B28/14 ,  C30B29/38 ,  H01M2/08 ,  C30B29/00

    CPC分类号： C23C16/45563 ,  C04B35/584 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45576 ,  C30B25/02 ,  C30B29/38 ,  C30B29/605 ,  H01M2/08 ,  Y10S117/902 ,  Y10S117/915

    摘要： A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with the second pipe for silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than a distance from an opening end of the second pipe to the substrate.

    摘要翻译： 超硬度高的氮化硅包括在负载为100g的情况下，晶粒尺寸为1-50μm和微维氏硬度为3,000kg / mm 2的优先取向的结晶氮化硅，具有 平均粒度小于1μm，微维氏硬度为3500kg / mm2，负荷为100g时，微观维氏硬度为2200kg / mm2的非晶氮化硅，负荷为100g，为 通过在由500℃-100℃加热的基板上吹入氮沉积源和硅沉积源，由管组件制成的吹管，其中氮沉积源的第一管被第二硅沉积管包围 并且从第一管的开口端到基板的距离比从第二管的开口端到基板的距离短。

    Device and method for synthesizing speech
    8.
    发明授权
    Device and method for synthesizing speech 失效
    用于合成语音的装置和方法

    公开(公告)号：US06975987B1

    公开(公告)日：2005-12-13

    申请号：US09678544

    申请日：2000-10-04

    申请人： Seiichi Tenpaku ,  Toshio Hirai

    发明人： Seiichi Tenpaku ,  Toshio Hirai

    IPC分类号： G10L21/04 ,  G01L13/00 ,  G01L13/04 ,  G10L13/02 ,  G10L13/06

    CPC分类号： G10L13/033

    摘要： The present invention provides pitch conversion processing technology capable of minimizing the distortion of speech sound naturalness. A speech waveform in a pitch-unit is considered to be divided into two segments: 1) the segment of β, that starts from the minus peak, where the waveform depending on the shape of vocal tracts appears, and 2) the segment of γ where the waveform depending on the vocal tract shape is attenuating and converging on the next minus peak. In addition, α is the point where a minus peak appears along with the glottal closure. Based on characteristics of speech waveforms, the present invention processes waveform for converting pitch in the segment of γ just before the next minus peak, which is least affected by the minus peak associated with the glottal closure. As such, waveform processing can be performed by keeping the complete contour of waveform at around the peak, and thereby reducing the effects of pitch conversion.

    摘要翻译： 本发明提供了能够最小化语音自然度的失真的音高转换处理技术。 认为音调单元中的语音波形被分为两个部分：1）从负峰开始的β段，其中出现根据声带形状的波形，以及2）伽马段 其中取决于声道形状的波形衰减并会聚在下一个负峰上。 另外，α是出现与峰值闭合一起出现负峰的点。 基于语音波形的特征，本发明处理波形，用于在刚好在与声门关闭相关的负峰值影响的下一个负峰之前的伽马段中转换音调。 因此，可以通过将波形的完整轮廓保持在峰值附近来进行波形处理，从而降低音调转换的影响。

    Crystalline sialon having wurtzite structure
    9.
    发明授权
    Crystalline sialon having wurtzite structure 失效
    具有纤锌矿结构的结晶塞隆

    公开(公告)号：US5429998A

    公开(公告)日：1995-07-04

    申请号：US134955

    申请日：1993-10-12

    申请人： Yoshihiro Someno ,  Toshio Hirai ,  Makoto Sasaki

    发明人： Yoshihiro Someno ,  Toshio Hirai ,  Makoto Sasaki

    IPC分类号： C01B21/082 ,  C04B35/597 ,  C23C16/30 ,  C04B35/58

    CPC分类号： C04B35/597

    摘要： A crystalline sialon comprising crystals containing aluminum, silicon, nitrogen and oxygen, in which the crystal structure has a hexagonal system wurtzite structure identical with that of AlN crystals, and the volume of the unit cell thereof has a value smaller than that of the AlN crystals. The crystalline sialon can be synthesized by mixing a silicon-containing gas, an aluminum halide, a nitrogen atom-containing gas and an oxygen atom-containing gas, converting the gas mixture into plasmas by microwave discharging and depositing a film on the surface of a substrate, in which the temperature of the substrate, while controlling a flow rate of the silicon-containing gas and a flow rate of the oxygen-containing gas. The crystalline sialon of the present invention has high hardness, is excellent in oxidation resistance, as well as excellent in heat conductivity and adhesion with a superhard substrate.

    摘要翻译： 包含含有铝，硅，氮和氧的晶体的结晶塞隆，其中晶体结构具有与AlN晶体相同的六方晶系纤锌矿结构，并且其晶胞体积小于AlN晶体的体积 。 可以通过混合含硅气体，卤化铝，含氮原子的气体和含氧原子的气体来合成结晶硅铝氧氮，通过微波放电将气体混合物转化成等离子体，并将膜沉积在 衬底，其中衬底的温度同时控制含硅气体的流量和含氧气体的流量。 本发明的结晶塞隆具有高硬度，耐氧化性优异，导热性优异且与超硬底材的粘合性优异。