METHOD OF PRODUCING GAS BARRIER FILM
    2.
    发明申请
    METHOD OF PRODUCING GAS BARRIER FILM 有权
    气体阻隔膜生产方法

    公开(公告)号:US20100062183A1

    公开(公告)日:2010-03-11

    申请号:US12553476

    申请日:2009-09-03

    IPC分类号: C23C16/34 H05H1/24

    摘要: A method of producing a gas barrier film comprises the steps of: supplying a material gas including silane gas, ammonia gas and at least one of nitrogen gas and hydrogen gas to a process chamber; keeping the process chamber at an internal pressure of 20 to 200 Pa; holding a substrate in the process chamber at a substrate temperature of not more than 70° C.; forming a bias potential of −100 V or less at the substrate; and supplying power P (W) to the material gas so as to have a ratio P/Q of the power P to a silane gas flow rate Q (sccm) of 15 to 30 W/sccm to generate plasma, thereby depositing a silicon nitride layer on a surface of the substrate.

    摘要翻译: 制造阻气膜的方法包括以下步骤:向处理室供给包括硅烷气体,氨气和至少一种氮气和氢气的原料气体; 将处理室保持在20〜200Pa的内压; 在不超过70℃的基板温度下将基板保持在处理室中; 在衬底上形成-100V或更小的偏置电位; 并向原料气体供给功率P(W),使得功率P的比值P / Q为硅烷气体流量Q(sccm)为15〜30W / sccm,以产生等离子体,由此沉积氮化硅 层在基板的表面上。

    METHOD OF FORMING A GAS BARRIER LAYER, A GAS BARRIER LAYER FORMED BY THE METHOD, AND A GAS BARRIER FILM
    3.
    发明申请
    METHOD OF FORMING A GAS BARRIER LAYER, A GAS BARRIER LAYER FORMED BY THE METHOD, AND A GAS BARRIER FILM 审中-公开
    形成气体阻隔层的方法,由方法形成的气体阻隔层和气体阻挡膜

    公开(公告)号:US20090317640A1

    公开(公告)日:2009-12-24

    申请号:US12484723

    申请日:2009-06-15

    IPC分类号: B32B9/00 H05H1/24

    CPC分类号: C23C16/30 C23C16/50

    摘要: A method of forming a gas barrier layer comprises: forming a first layer over a substrate by plasma-enhanced CVD with a first plasma excitation power, at least a part of a surface of the substrate being made of an organic material; and forming a second layer on the first layer by plasma-enhanced CVD with a second plasma excitation power which is higher than the first plasma excitation power.

    摘要翻译: 一种形成气体阻隔层的方法包括:通过等离子体增强CVD在第一等离子体激发功率下在衬底上形成第一层,衬底表面的至少一部分由有机材料制成; 以及通过等离子体增强CVD在第一等离子体激发功率的第二等离子体激发功率下在第一层上形成第二层。

    METHOD OF PRODUCING GAS BARRIER LAYER
    5.
    发明申请
    METHOD OF PRODUCING GAS BARRIER LAYER 有权
    生产气体阻隔层的方法

    公开(公告)号:US20100247806A1

    公开(公告)日:2010-09-30

    申请号:US12730538

    申请日:2010-03-24

    申请人: Toshiya TAKAHASHI

    发明人: Toshiya TAKAHASHI

    IPC分类号: C23C16/513 C23C16/42

    摘要: The producing method of a gas barrier layer uses a material having at least one Si—H bond, a material having at least one N-H bond, and at least one of nitrogen gas, hydrogen gas and a noble gas and forms the gas barrier layer by plasma-enhanced CVD using a plasma in which an emission intensity A of emission at 414 nm, an emission intensity B of emission at 336 nm, an emission intensity C of emission at 337 nm, and an emission intensity D of emission at 656 nm satisfy formulas a to c: 2

    摘要翻译: 阻气层的制造方法使用具有至少一个Si-H键的材料,具有至少一个NH键的材料,以及氮气,氢气和惰性气体中的至少一种,并通过以下方式形成阻气层 使用等离子体CVD,其中发射414nm处的发射强度A,发射强度为336nm,发射强度为337nm,发射强度D为656nm的等离子体满足 式a至c:2