Flip-chip type semiconductor device
    1.
    发明授权
    Flip-chip type semiconductor device 失效
    倒装型半导体器件

    公开(公告)号:US06794058B2

    公开(公告)日:2004-09-21

    申请号:US10350110

    申请日:2003-01-24

    IPC分类号: H01L2912

    摘要: A flip-chip type semiconductor device sealed with a light transmissive epoxy resin composition comprising (A) an epoxy resin having the following general formula (i):  wherein n is 0 or a positive number, (B) a curing accelerator, and (C) an amorphous silica-titania co-melt as at least one of inorganic fillers, said composition satisfying the relationship of the following formula (1): [ { 2 ⁢ ( n A 2 + n C 2 ) - ( n A + n C ) 2 } / 2 ] 1 / 2

    摘要翻译: 一种用透光性环氧树脂组合物密封的倒装芯片型半导体器件,其包含(A)具有以下通式(i)的环氧树脂:其中n为0或正数,(B)固化促进剂和(C )无定形二氧化硅 - 二氧化钛共熔体作为无机填料中的至少一种,所述组合物满足下式(1)的关系:其中nA是组合物的固化产物在25℃以下的折射率,不包括 无机填料,nC是25℃下的无机填料的折射率。

    Light-transmissive epoxy resin composition and semiconductor device
    2.
    发明授权
    Light-transmissive epoxy resin composition and semiconductor device 有权
    透光环氧树脂组合物和半导体器件

    公开(公告)号:US06627328B2

    公开(公告)日:2003-09-30

    申请号:US09950737

    申请日:2001-09-13

    IPC分类号: H01L2912

    摘要: An epoxy resin composition comprising (A) an epoxy resin, (B) a curing accelerator, and (C) an inorganic filler is light transmissive when it satisfies formulae (1) and (2): [{2(nA2+nC2)−(nA+nC)2}/2]½

    摘要翻译: 包含(A)环氧树脂,(B)固化促进剂和(C)无机填料的环氧树脂组合物当满足式(1)和(2)时是透光的:其中nA是在T1° 固化的未填充组合物的c为n C为无机填料的T1℃的折射率,fA为固化的未填充组合物的折射率的温度系数,f C为折射率的温度系数 无机填料。 固化的组合物在宽温度范围内具有改善的耐热性,耐湿性和低应力以及高透明度。 该组合物适用于光学半导体器件的密封。

    Silicone-modified epoxy or phenolic resin compositions and semiconductor devices sealed therewith
    3.
    发明授权
    Silicone-modified epoxy or phenolic resin compositions and semiconductor devices sealed therewith 有权
    硅氧烷改性的环氧树脂或酚醛树脂组合物和与其密封的半导体器件

    公开(公告)号:US06709753B2

    公开(公告)日:2004-03-23

    申请号:US10079495

    申请日:2002-02-22

    IPC分类号: B32B2742

    摘要: A resin composition is provided comprising a silicone-modified epoxy or phenolic resin obtained by reacting an epoxy or phenolic resin having specific structural units with an organopolysiloxane. The modified epoxy or phenolic resin is such that after the modified epoxy or phenolic resin is cured alone or together with another epoxy resin and/or phenolic resin to form a cured product, the organopolysiloxane component does not form a phase separation structure in the cured product. The composition cures into a product having both the adherence, heat resistance and humidity resistance characteristic of epoxy or phenolic resins and the flexibility and impact resistance characteristic of silicone resins.

    摘要翻译: 提供一种树脂组合物,其包含通过具有特定结构单元的环氧树脂或酚醛树脂与有机聚硅氧烷反应而获得的硅氧烷改性环氧树脂或酚醛树脂。 改性环氧树脂或酚醛树脂使得在改性环氧树脂或酚醛树脂单独或与另一种环氧树脂和/或酚醛树脂一起固化以形成固化产物后,有机聚硅氧烷组分在固化产物中不形成相分离结构 。 该组合物固化成具有环氧树脂或酚醛树脂的粘附性,耐热性和耐湿性特性以及有机硅树脂的柔韧性和耐冲击性特性的产品。

    Method for heat treatment of low melting point-metal plated steel band
    10.
    发明授权
    Method for heat treatment of low melting point-metal plated steel band 失效
    低熔点镀金钢带热处理方法

    公开(公告)号:US4256519A

    公开(公告)日:1981-03-17

    申请号:US32882

    申请日:1979-04-24

    IPC分类号: C21D9/56 C21D9/52 C21D9/54

    CPC分类号: C21D9/563

    摘要: A method of and an apparatus for overaging treatment of low melting point-metal plated steel band, in which a hearth roll having surface layer which consists mainly of phenol resin, mineral fiber and small quantity of additive as necessary is used under the overaging treatment temperature range and within weak oxidation, inactive or reducing high temperature gas atmosphere such that the phenol resin substantially does not oxidize and evaporate.The method and apparatus allow overaging treatment of low melting point-metal plated steel band in continuous annealing furnace having many hearth rolls to guide the steel band, and prevent the low melting point metal from being picked up on the surface of the hearth roll.

    摘要翻译: 低熔点镀金钢带的过时效处理方法和装置,其中在过时效处理温度下使用具有主要由酚醛树脂,矿物纤维和少量添加剂组成的表面层的炉床辊 在弱氧化,无活性或还原的高温气体气氛中,使得酚醛树脂基本上不氧化和蒸发。 该方法和装置允许在具有许多炉床的连续退火炉中对低熔点金属镀钢钢带进行过时效处理,以引导钢带,并且防止低熔点金属被拾取在炉床辊的表面上。