公开(公告)号：US5543252A

公开(公告)日：1996-08-06

申请号：US228504

申请日：1994-04-15

申请人： Tsuyoshi Shibata ,  Koji Hashimoto ,  Katsuhiko Heida ,  Kenji Kawano ,  Shinichi Ito ,  Keiji Horioka

发明人： Tsuyoshi Shibata ,  Koji Hashimoto ,  Katsuhiko Heida ,  Kenji Kawano ,  Shinichi Ito ,  Keiji Horioka

IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  G03F9/00

CPC分类号： G03F1/30 ,  G03F1/29 ,  G03F1/34

摘要： A method for manufacturing an exposure mask provided with a substrate for transmitting an exposure light and with phase shifters arranged at prescribed intervals on the substrate for shifting the phase of the exposure light transmitted through the substrate by a half wavelength as compared with the phase of the exposure light transmitted through both the substrate and an opening between the phase shifters consists of the steps of preparing a solution containing a phase shifter material, arranging resist layers at the prescribed intervals on the substrate, immersing the substrate with the resist layers in the solution, forming the phase shifters on the substrate between the resist layers by a prescribed thickness by depositing the material of the phase shifter from the solution, and removing the resist layers from the substrate to form the openings.

摘要翻译： 一种制造曝光掩模的方法，该曝光掩模具有用于透射曝光光的基板和在基板上以规定间隔布置的移相器，用于将透过该基板的曝光光的相位与第二波长的相位相比移动一半波长 透过基板和移相器之间的开口的曝光光由以下步骤组成：制备含有移相材料的溶液，在基板上以规定的间隔配置抗蚀剂层，将基板与抗蚀剂层浸入溶液中， 通过从溶液中沉积移相器的材料，在基板上形成位于抗蚀剂层之间的相移规定厚度的移相器，以及从基板去除抗蚀剂层以形成开口。

公开(公告)号：US5514499A

公开(公告)日：1996-05-07

申请号：US249038

申请日：1994-05-25

申请人： Takayuki Iwamatsu ,  Kenji Kawano ,  Hideya Miyazaki ,  Shinichi Ito ,  Soichi Inoue ,  Hiroyuki Sato ,  Satoshi Tanaka ,  Koji Hashimoto

发明人： Takayuki Iwamatsu ,  Kenji Kawano ,  Hideya Miyazaki ,  Shinichi Ito ,  Soichi Inoue ,  Hiroyuki Sato ,  Satoshi Tanaka ,  Koji Hashimoto

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  G03F9/00

CPC分类号： G03F1/34 ,  G03F1/26 ,  G03F1/32

摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..

摘要翻译： 用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质 基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

公开(公告)号：US5686209A

公开(公告)日：1997-11-11

申请号：US754162

申请日：1996-11-22

申请人： Takayuki Iwamatsu ,  Kenji Kawano ,  Hideya Miyazaki ,  Shinichi Ito ,  Soichi Inoue ,  Hiroyuki Sato ,  Satoshi Tanaka ,  Koji Hashimoto

发明人： Takayuki Iwamatsu ,  Kenji Kawano ,  Hideya Miyazaki ,  Shinichi Ito ,  Soichi Inoue ,  Hiroyuki Sato ,  Satoshi Tanaka ,  Koji Hashimoto

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  G03F9/00

CPC分类号： G03F1/34 ,  G03F1/26 ,  G03F1/32

摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..

摘要翻译： 用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质 基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

公开(公告)号：US5609977A

公开(公告)日：1997-03-11

申请号：US589638

申请日：1996-01-22

申请人： Takayuki Iwamatsu ,  Kenji Kawano ,  Hideya Miyazaki ,  Shinichi Ito ,  Soichi Inoue ,  Hiroyuki Sato ,  Satoshi Tanaka ,  Koji Hashimoto

发明人： Takayuki Iwamatsu ,  Kenji Kawano ,  Hideya Miyazaki ,  Shinichi Ito ,  Soichi Inoue ,  Hiroyuki Sato ,  Satoshi Tanaka ,  Koji Hashimoto

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  G03F9/00

CPC分类号： G03F1/34 ,  G03F1/26 ,  G03F1/32

摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..

摘要翻译： 用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质 基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

公开(公告)号：US07662546B2

公开(公告)日：2010-02-16

申请号：US11304549

申请日：2005-12-16

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

IPC分类号： H05B3/68

CPC分类号： H01L21/6715 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/38 ,  G03F7/70358 ,  G03F7/70558 ,  H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

摘要翻译： 用涂膜处理的基板的加热装置具有内部空间的室，在内部空间中加热被处理基板的加热板和分隔构件。 加热板具有支撑表面，该支撑表面支撑在腔室内待处理的基底。 分隔构件布置在腔室中以面向支撑表面。 分隔构件将内部空间分隔成第一和第二空间，并且具有允许第一和第二空间彼此连通的多个孔。 加热板的支撑表面设置在第一空间中。 形成空气流的气流形成机构设置在第二空间中。 该机理将从光致抗蚀剂膜蒸发的物质排出。

公开(公告)号：US20080050677A1

公开(公告)日：2008-02-28

申请号：US11905976

申请日：2007-10-05

申请人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

发明人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

IPC分类号： G03C5/00

CPC分类号： H01L23/544 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  G03F7/2026 ,  G03F7/70341 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G21K5/10 ,  H01J2237/30438 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/949 ,  H01L2924/00

摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

摘要翻译： 一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯 区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

公开(公告)号：US07018932B2

公开(公告)日：2006-03-28

申请号：US10377597

申请日：2003-03-04

申请人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

发明人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

IPC分类号： H01L21/027 ,  G03F9/00

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675 ,  H01J2237/30438

摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置 形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像， 至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于 所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

公开(公告)号：US07009148B2

公开(公告)日：2006-03-07

申请号：US10682419

申请日：2003-10-10

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

IPC分类号： F27B5/14

CPC分类号： H01L21/67115 ,  G03F7/0042 ,  G03F7/0392 ,  G03F7/38 ,  H01L21/0273 ,  H01L21/67109

摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

摘要翻译： 一种处理衬底的方法，包括在衬底上形成化学放大的抗蚀剂膜，将能量束照射到化学放大的抗蚀剂膜上以在其中形成潜像，对化学放大的抗蚀剂膜进行热处理，加热处理为 以相对移动加热部分的方式进行加热，该加热部分用于加热化学放大的抗蚀剂膜和形成在加热部分的下表面和化学放大型抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流 。

公开(公告)号：US20050250056A1

公开(公告)日：2005-11-10

申请号：US11114043

申请日：2005-04-26

申请人： Kenji Kawano ,  Shinichi Ito

发明人： Kenji Kawano ,  Shinichi Ito

IPC分类号： G03F7/38 ,  H01L21/027 ,  H01L21/312

CPC分类号： G03F7/38 ,  H01L21/312

摘要： According to an aspect of the present invention, there is provided a substrate treatment method comprising forming a chemically amplified resist film on a substrate to be treated, and supplying heat to the chemically amplified resist film to perform a heat treatment, wherein the heat treatment includes creating a first temperature state satisfying TT TB in which TT is a temperature at a surface portion of the chemically amplified resist film, and TB is a temperature at an interface portion of the chemically amplified resist film with the substrate to be treated.

摘要翻译： 根据本发明的一个方面，提供了一种基板处理方法，包括在待处理的基板上形成化学放大的抗蚀剂膜，并向化学放大的抗蚀剂膜供热以进行热处理，其中热处理包括 产生一个满足T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T B SUB>其中T T T是化学放大抗蚀剂膜的表面部分处的温度，T B B是化学放大抗蚀剂膜的界面部分处的温度 与待处理的基底。

公开(公告)号：US20050069815A1

公开(公告)日：2005-03-31

申请号：US10916414

申请日：2004-08-12

申请人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Masami Watase

发明人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Masami Watase

IPC分类号： B23K26/18 ,  B23K26/00 ,  B23K26/02 ,  B23K101/40 ,  G03F7/00 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/544

CPC分类号： H01L23/544 ,  H01L21/0275 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/32139 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.

摘要翻译： 一种处理方法包括在选择性地在处理区域上在基板上照射处理光的处理区域上的第一膜上形成水溶性保护膜，以选择性地去除处理区域中的第一膜和处理区域上的保护膜， 并在选择性照射后用水除去保护膜。